公开(公告)号：US20080079013A1

公开(公告)日：2008-04-03

申请号：US11535992

申请日：2006-09-28

申请人： Yun-Li Li ,  Tzu-Chi Wen ,  Liang-Wen Wu ,  Chi-Jui Chen ,  Fen-Ren Chien

发明人： Yun-Li Li ,  Tzu-Chi Wen ,  Liang-Wen Wu ,  Chi-Jui Chen ,  Fen-Ren Chien

IPC分类号： H01L33/00

CPC分类号： H01L33/08

摘要： A light emitting diode structure including a substrate, a first type doped semiconductor layer, an insulating layer, light emitting layers, a second type doped semiconductor layer, a first pad and a second pad is provided. The first type doped semiconductor layer is disposed on the substrate. The insulating layer having openings is disposed on the first type doped semiconductor layer for exposing a part of the first type doped semiconductor layer. The light emitting layers are disposed within the corresponding openings of the insulating layer respectively. The second type doped semiconductor layer is disposed on the insulating layer and the light emitting layers. The first pad is disposed on the first type doped semiconductor layer and is electrically connected thereto. The second pad is disposed on the second type doped semiconductor layer and is electrically connected thereto. Besides, air gaps may also be utilized for separating the light emitting layers.

摘要翻译： 提供了包括衬底，第一类型掺杂半导体层，绝缘层，发光层，第二类型掺杂半导体层，第一衬垫和第二衬垫的发光二极管结构。 第一类掺杂半导体层设置在基板上。 具有开口的绝缘层设置在第一类掺杂半导体层上，用于暴露第一类掺杂半导体层的一部分。 发光层分别设置在绝缘层的相应开口内。 第二类掺杂半导体层设置在绝缘层和发光层上。 第一焊盘设置在第一型掺杂半导体层上并与其电连接。 第二焊盘设置在第二型掺杂半导体层上并与其电连接。 此外，气隙也可以用于分离发光层。

公开(公告)号：US07180097B2

公开(公告)日：2007-02-20

申请号：US10987518

申请日：2004-11-12

申请人： Liang-Wen Wu ,  Ru-Chin Tu ,  Cheng-Tsang Yu ,  Tzu-Chi Wen ,  Fen-Ren Chien

发明人： Liang-Wen Wu ,  Ru-Chin Tu ,  Cheng-Tsang Yu ,  Tzu-Chi Wen ,  Fen-Ren Chien

IPC分类号： H01L27/15 ,  H01L31/12

CPC分类号： H01L33/22 ,  H01L33/04 ,  H01L33/14 ,  H01L33/32

摘要： A GaN-based LED structure is provided so that the brightness and lighting efficiency of the GaN-based LED are enhanced effectively. The greatest difference between the GaN-based LEDs according to the invention and the prior arts lies in the addition of a thin layer on top of the p-type contact layer within the traditional structure. The thin layer could be formed using silicon-nitride (SiN), or it could have a superlattice structure made of either SiN and undoped indium-gallium-nitride (InGaN), or SiN and undoped aluminum-gallium-indium-nitride (AlGaInN), respectively. Because of the use of SiN in the thin layer, the surfaces of the GaN-based LEDs would be micro-roughened, and the total internal reflection resulted from the GaN-based LEDs' higher index of refraction than the atmosphere could be avoided. The GaN-based LEDs according to the invention therefore have superior external quantum efficiency and lighting efficiency.

摘要翻译： 提供GaN基LED结构，使GaN基LED的亮度和照明效率得到有效的提高。 根据本发明的GaN基LED和现有技术之间的最大差异在于在传统结构中在p型接触层的顶部上添加薄层。 可以使用氮化硅（SiN）形成薄层，或者可以具有由SiN和未掺杂的氮化镓铟（InGaN）或SiN和未掺杂的铝 - 镓 - 氮化铟（AlGaInN）的超晶格结构， ， 分别。 由于在薄层中使用SiN，GaN基LED的表面将被微粗糙化，并且可以避免由GaN基LED产生的比大气更高的折射率引起的全内反射。 因此，根据本发明的GaN基LED具有优异的外部量子效率和照明效率。

公开(公告)号：US07105850B2

公开(公告)日：2006-09-12

申请号：US11050091

申请日：2005-02-03

申请人： Liang-Wen Wu ,  Ru-Chin Tu ,  Cheng-Tsang Yu ,  Tzu-Chi Wen ,  Fen-Ren Chien

发明人： Liang-Wen Wu ,  Ru-Chin Tu ,  Cheng-Tsang Yu ,  Tzu-Chi Wen ,  Fen-Ren Chien

IPC分类号： H01L33/00 ,  H01L29/20

CPC分类号： H01L33/40 ,  H01L33/32

摘要： Disclosed is a GaN LED structure with a p-type contacting layer using Al—Mg-codoped In1−yGayN grown at low temperature, and having low resistivity. The LED structure comprises, from the bottom to top, a substrate, a buffer layer, an n-type GaN layer, an active layer, a p-type shielding layer, and a p-type contacting layer. In this invention, Mg and Al are used to co-dope the In1−yGayN to grow a low resistive p-type contacting layer at low temperature. Because of the Al—Mg-codoped, the light absorption problem of the p-type In1−yGayN layer is improved. The product, not only has the advantage of convenience of the p-type contacting layer for being manufactured at low temperature, but also shows good electrical characteristics and lowers the operating voltage of the entire element so that the energy consumption during operation is reduced and the yield rate is increased.

摘要翻译： 公开了一种具有p型接触层的GaN LED结构，其使用在低温下生长并具有低电阻率的Al-Mg共掺杂的In-1-y-Ga y Y N。 LED结构从底部到顶部包括衬底，缓冲层，n型GaN层，有源层，p型屏蔽层和p型接触层。 在本发明中，Mg和Al用于共掺杂In 1-y Ga Ga 3，以在低温下生长低电阻p型接触层。 由于Al-Mg共掺杂，提高了p型In 1-y Ga Ga 3 N层的光吸收问题。 该产品不仅具有在低温下制造的p型接触层的便利性，而且还显示出良好的电特性并降低整个元件的工作电压，从而降低了操作期间的能量消耗， 收益率提高。

公开(公告)号：US07087922B2

公开(公告)日：2006-08-08

申请号：US10991011

申请日：2004-11-16

申请人： Liang-Wen Wu ,  Ru-Chin Tu ,  Cheng-Tsang Yu ,  Tzu-Chi Wen ,  Fen-Ren Chien

发明人： Liang-Wen Wu ,  Ru-Chin Tu ,  Cheng-Tsang Yu ,  Tzu-Chi Wen ,  Fen-Ren Chien

IPC分类号： H01S5/00 ,  H01L29/06 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328

CPC分类号： H01L33/32 ,  H01L27/15 ,  H01L33/02 ,  H01L33/14 ,  H01L33/40

摘要： A gallium-nitride based light-emitting diode structure includes a digital penetration layer to raise its reverse withstanding voltage and electrostatic discharge. The digital penetration layer is formed by alternate stacking layers of AlxInyGa1-x-yNzP1-z/AlpInqGa1-p-qNrP1-r, wherein 0≦x,y,z,p,q,r≦1, and AlxInyGa1-x-yNzP1-z has an energy gap greater than that of AlpInqGa1-p-qNrP1-r. The AlxInyGa1-x-yNzP1-z layers have increasing thickness and the AlpInqGa1-p-qNzP1-r layers have decreasing thickness.

摘要翻译： 氮化镓基发光二极管结构包括数字穿透层，以提高其反向耐压和静电放电。 数字穿透层通过交替堆叠的层叠层形成，其中，层叠层由Al x Al 1 N y N z N 1-z p p 其中0 <= x，y，z，p，q，r <= 1，和＆lt; x＆lt; x＆lt; 1-xy N 1 Z z具有大于Al的能隙。在 _{1 1 1-p 本发明的第一和第二方面的方法，其中， 层具有越来越大的厚度，并且Al x Ga 1-p Q N z N 1 - r层具有减小的厚度。}

公开(公告)号：US07180096B2

公开(公告)日：2007-02-20

申请号：US10964350

申请日：2004-10-12

申请人： Liang-Wen Wu ,  Ru-Chin Tu ,  Cheng-Tsang Yu ,  Tzu-Chi Wen ,  Fen-Ren Chien

发明人： Liang-Wen Wu ,  Ru-Chin Tu ,  Cheng-Tsang Yu ,  Tzu-Chi Wen ,  Fen-Ren Chien

IPC分类号： H01L27/15 ,  H01L31/12

CPC分类号： H01L33/32 ,  H01L27/15 ,  H01L33/02 ,  H01L33/04 ,  H01L33/42

摘要： An epitaxial structure for GaN-based LEDs to achieve better reverse withstanding voltage and anti-ESD capability is provided. The epitaxial structure has an additional anti-ESD thin layer on top of the p-type contact layer within traditional GaN-based LEDs, which is made of undoped indium-gallium-nitrides (InGaN) or low-band-gap (Eg

摘要翻译： 提供了用于GaN基LED的外延结构，以实现更好的反向耐受电压和抗ESD能力。 外延结构在传统的GaN基LED中的p型接触层的顶部具有另外的抗ESD薄层，其由未掺杂的铟镓氮化物（InGaN）或低带隙（Eg <3.4）制成 eV），未掺杂的铝 - 铟 - 镓 - 氮化物（AlInGaN）。 这种抗ESD薄层大大改善了GaN基LED的反向耐受电压和ESD的电阻率，这又显着地延长了GaN基LED的工作寿命。

公开(公告)号：US20060097273A1

公开(公告)日：2006-05-11

申请号：US11311615

申请日：2005-12-19

申请人： Liang-Wen Wu ,  Cheng-Tsang Yu ,  Tzu-Chi Wen ,  Fen-Ren Chien

发明人： Liang-Wen Wu ,  Cheng-Tsang Yu ,  Tzu-Chi Wen ,  Fen-Ren Chien

IPC分类号： H01L33/00 ,  H01L29/225

CPC分类号： H01L33/12 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L33/007 ,  H01L33/04 ,  H01L33/14 ,  H01L33/32

摘要： A GaN LED structure with a short period superlattice contacting layer is provided. The LED structure comprises, from the bottom to top, a substrate, a double buffer layer, an n-type GaN layer, a short period superlattice contacting layer, an active layer, a p-type shielding layer, and a contacting layer. The feature is to avoid the cracks or pin holes in the thick n-type GaN layer caused during the fabrication of heavily doped (n>1×1019 cm−3) thick n-type GaN contacting layer, so that the quality of the GaN contacting layer is assured. In addition, by using short period heavily silicon doped Al1-x-yGaxInyN (n++-Al1-x-yGaxInyN) to grow a superlattice structure to become a short period superlattice contacting layer structure, which is used as a low resistive n-type contacting layer in a GaInN/GaN MQW LED. In the following steps, it is easier to form an n-type ohmic contacting layer, and the overall electrical characteristics are improved. It also lowers the operating voltage of the entire element so that the energy consumption during operation is reduced and the yield rate is increased.

摘要翻译： 提供具有短周期超晶格接触层的GaN LED结构。 LED结构从底部到顶部包括衬底，双缓冲层，n型GaN层，短周期超晶格接触层，有源层，p型屏蔽层和接触层。 该特征是避免在重掺杂（n> 1×10 9 cm -3 -3）厚n的制造期间引起的厚n型GaN层中的裂纹或针孔 型GaN接触层，从而确保了GaN接触层的质量。 另外，通过使用短周期大量掺硅的Al 1-x N y N（n + 2）+ 以形成超晶格结构，成为短周期的超晶格接触层结构，即，其中，n为0〜 用作GaInN / GaN MQW LED中的低电阻n型接触层。 在以下步骤中，形成n型欧姆接触层更容易，并且整体电特性得到改善。 它还降低了整个元件的工作电压，从而降低了操作期间的能耗并提高了产量。

公开(公告)号：US07042019B1

公开(公告)日：2006-05-09

申请号：US10964351

申请日：2004-10-12

申请人： Liang-Wen Wu ,  Ru-Chin Tu ,  Cheng-Tsang Yu ,  Tzu-Chi Wen ,  Fen-Ren Chien

发明人： Liang-Wen Wu ,  Ru-Chin Tu ,  Cheng-Tsang Yu ,  Tzu-Chi Wen ,  Fen-Ren Chien

IPC分类号： H01L29/205 ,  H01L27/15

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02573 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32

摘要： A structure for the n-type contact layer in the GaN-based MQW LEDs is provided. Instead of using Si-doped GaN as commonly found in conventional GaN-based MQW LEDs, the n-type contact layer provided by the present invention achieves high doping density (>1×1019 cm−3) and low resistivity through a superlattice structure combining two types of materials, AlmInnGa1-m-nN and AlpInqGa1-p-qN (0≦m,n

摘要翻译： 提供了一种用于GaN基MQW LED中的n型接触层的结构。 本发明提供的n型接触层代替使用常规GaN基MQW LED中通常所发现的Si掺杂GaN，而实现了高掺杂密度（> 1×10 9Ω-3 ），并且通过结合两种类型的材料的超晶格结构，具有低电阻率的Al N和N 1 Ga （0 <= m，n <1,0

公开(公告)号：US06979835B1

公开(公告)日：2005-12-27

申请号：US10940806

申请日：2004-09-11

申请人： Cheng-Tsang Yu ,  Ru-Chin Tu ,  Liang-Wen Wu ,  Tzu-Chi Wen ,  Fen-Ren Chien

发明人： Cheng-Tsang Yu ,  Ru-Chin Tu ,  Liang-Wen Wu ,  Tzu-Chi Wen ,  Fen-Ren Chien

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06

摘要： An epitaxial structure for the GaN-based LED is provided. The GaN-based LED uses a substrate usually made of sapphire or silicon-carbide (SiC). On top of the substrate, the GaN-based LED contains an n-type contact layer made of an n-type GaN-based material. On top of the n-type contact layer, the GaN-based LED further contains a lower barrier layer covering part of the surface of the n-type contact layer. A negative electrode is also on top of and has an ohmic contact with the n-type contact layer in an area not covered by the lower barrier layer. On top of the lower barrier layer, the GaN-based LED then further contains an active layer made of aluminum-gallium-indium-nitride, an upper barrier layer, a p-type contact layer made of a magnesium (Mg)-doped GaN material, and a positive electrode having an ohmic contact with the p-type contact layer, sequentially stacked in this order from bottom to top. Within this structure, each of the barrier layers further contains, from bottom to top, a first AlGaInN layer, a SiN layer, and a second AlGaInN layer.

摘要翻译： 提供了一种用于GaN基LED的外延结构。 GaN基LED使用通常由蓝宝石或碳化硅（SiC）制成的衬底。 在基板的顶部，GaN基LED包含由n型GaN基材料制成的n型接触层。 在n型接触层的顶部，GaN基LED还包含覆盖n型接触层表面的一部分的下阻挡层。 在未被下阻挡层覆盖的区域中，负电极也在n型接触层之上，并与其接触。 在下阻挡层的顶部，GaN基LED还包含由铝 - 镓 - 氮化铟制成的有源层，上阻挡层，由镁（Mg）掺杂的GaN制成的p型接触层 材料和与p型接触层具有欧姆接触的正极，从下到上依次层叠。 在该结构中，每个势垒层还从底部到顶部包含第一AlGaInN层，SiN层和第二AlGaInN层。

公开(公告)号：US07307291B2

公开(公告)日：2007-12-11

申请号：US11041491

申请日：2005-01-22

申请人： Liang-Wen Wu ,  Ru-Chin Tu ,  Cheng-Tsang Yu ,  Tzu-Chi Wen ,  Fen-Ren Chien

发明人： Liang-Wen Wu ,  Ru-Chin Tu ,  Cheng-Tsang Yu ,  Tzu-Chi Wen ,  Fen-Ren Chien

IPC分类号： H01L31/072

CPC分类号： H01L31/1852 ,  B82Y20/00 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/101 ,  Y02E10/544

摘要： A structure for a gallium-nitride (GaN) based ultraviolet photo detector is provided. The structure contains an n-type contact layer, a light absorption layer, a light penetration layer, and a p-type contact layer, sequentially stacked on a substrate from bottom to top in this order. The layers are all made of aluminum-gallium-indium-nitride (AlGaInN) compound semiconductors. By varying the composition of aluminum, gallium, and indium, the layers, on one hand, can achieve the desired band gaps so that the photo detector is highly responsive to ultraviolet lights having specific wavelengths. On the other hand, the layers have compatible lattice constants so that problems associated with excessive stress are avoided and high-quality epitaxial structure is obtained. The structure further contains a positive electrode, a light penetration contact layer, and an anti-reflective coating layer on top of the p-type contact layer, and a negative electrode on the n-type contact layer.

摘要翻译： 提供了一种用于氮化镓（GaN）基紫外光检测器的结构。 该结构包含依次从下到上依次堆叠在基板上的n型接触层，光吸收层，光穿透层和p型接触层。 这些层都由铝 - 镓 - 氮化铟（AlGaInN）化合物半导体制成。 通过改变铝，镓和铟的组成，一方面，这些层可以实现期望的带隙，使得光电检测器对具有特定波长的紫外光具有高度响应性。 另一方面，这些层具有相容的晶格常数，从而避免与过度应力相关的问题，并获得高质量的外延结构。 该结构还在p型接触层的顶部还包含正极，光穿透接触层和抗反射涂层，以及n型接触层上的负极。

公开(公告)号：US07049638B2

公开(公告)日：2006-05-23

申请号：US11029584

申请日：2005-01-05

申请人： Liang-Wen Wu ,  Ru-Chin Tu ,  Cheng-Tsang Yu ,  Tzu-Chi Wen ,  Fen-Ren Chien

发明人： Liang-Wen Wu ,  Ru-Chin Tu ,  Cheng-Tsang Yu ,  Tzu-Chi Wen ,  Fen-Ren Chien

IPC分类号： H01L29/225

CPC分类号： H01L33/32 ,  H01L33/14 ,  H01L33/22 ,  H01L33/42

摘要： A GaN-based LED structure is provided so that the brightness and luminous efficiency of the GaN-based LED are enhanced effectively. The greatest difference between the GaN-based LEDs according to the invention and the prior arts lies in the addition of a masking buffer layer on top of the p-type contact layer and a p-type roughened contact layer on top of the masking buffer layer. The masking buffer layer could be formed using MOCVD to deposit SixNy (x,y≧1), MgwNz (w,z≧1), or AlsIntGa1-s-tN (0≦s,t

摘要翻译： 提供GaN基LED结构，使得GaN基LED的亮度和发光效率得到有效的提高。 根据本发明的GaN基LED和现有技术之间的最大差异在于在p型接触层的顶部添加掩蔽缓冲层，在掩模缓冲层顶部添加p型粗糙接触层 。 掩蔽缓冲层可以使用MOCVD形成以沉积Si x N y（x，y> = 1），Mg N N （w，z> = 1），或者在第一个第一个第一个N（0 <= s，t <1，s + t <= 1）重掺杂Si和/或Mg。 掩蔽缓冲层实际上是一个包含多个随机分布的簇的掩码。 然后，在掩模缓冲层之上，由p型Al 1 In 1 N u N N（0≤u，v，v）构成的p型粗糙化接触层 <1，u + v <= 1）。 p型粗糙接触层不直接在掩蔽缓冲层的顶部生长。 相反，p型粗糙接触层从未被掩蔽缓冲层簇覆盖的下面的p型接触层的顶表面开始。 然后，p型粗糙化的接触层向上生长直到其通过（但不覆盖）掩蔽缓冲层的掩模一定距离。 可以避免GaN基LED的折射率高于大气的全内反射。 因此，根据本发明的GaN基LED具有优异的外部量子效率和发光效率。