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1.发明公开公开(公告)号：US20230253760A1
公开(公告)日：2023-08-10
申请号：US18134573
申请日：2023-04-14
Applicant: ZHEJIANG LAB
Inventor： Qiang ZHANG , Hui YU
CPC classification number: H01S5/125 , H01S5/141 , H04B10/43 , H01S5/2216
Abstract: A 6.4 Tbps silicon-based photonics engine transceiver chip module for high-speed optical communication manufactured based on processing techniques of semiconductors such as silicon-on-insulator (SOI) and indium phosphide (InP). The photonics engine transceiver chip module uses a silicon photonic chip as a substrate, and optical chips of an InP laser and an optical amplifier are heterogeneously integrated with the silicon photonic chip through bonding or flip-chip soldering. As a pump light source, the laser generates a soliton-based optical frequency comb by using an ultra-low loss silicon nitride (SiN) resonator cavity, and can be used as a multi-wavelength laser. This reduces use of a single-wavelength laser chip, reduces a power consumption and heat conduction of a laser in an optical chip of a photonic engine, and improves an integration level of an optical device. The optical frequency comb generates an optical carrier with wide bandwidth coverage and a large quantity of wavelengths.
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公开(公告)号：US20230291483A1
公开(公告)日：2023-09-14
申请号：US18197751
申请日：2023-05-16
Applicant: ZHEJIANG LAB
Inventor： Qiang ZHANG , Hui YU
CPC classification number: H04B10/60 , G02F1/2955 , G02F1/311 , G02F1/3131 , G02F2202/10 , G02F2201/307 , G02F2203/70 , G02F2201/06 , G02F2201/205 , G02F2203/58
Abstract: A programmable two-dimensional simultaneous multi-beam optically operated phased array receiver chip is manufactured based on silicon-on-insulator (SOI) and indium phosphide (InP) semiconductor manufacturing processes, including the SiN process. The InP-based semiconductor is used for preparing a laser array chip and a semiconductor optical amplifier array chip, the SiN is used for preparing an optical power divider, and the SOI semiconductor is used for preparing a silicon optical modulator, a germanium-silicon detector, an optical wavelength multiplexer, a true delay line, and other passive optical devices. The whole integration of the receiver chip is realized through heterogeneous integration of the InP-based chip and the SOI-based chip. Simultaneous multi-beam scanning can be realized through peripheral circuit programming control. The chip not only can realize two-dimensional multi-beam scanning, but also has strong expansibility, such that the chip can be used for ultra-wideband high-capacity wireless communication and simultaneous multi-target radar recognition systems.
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