公开(公告)号：US20170293078A1

公开(公告)日：2017-10-12

申请号：US15626161

申请日：2017-06-18

Applicant: ZHENGBIAO OUYANG

Inventor： ZHENGBIAO OUYANG ,  GUOHUA WEN

IPC: G02B6/122 ,  G02F1/313

CPC classification number: G02B6/1225 ,  G02B26/02 ,  G02F1/313 ,  G02F2201/06 ,  G02F2202/32 ,  G02F2203/06

Abstract: The present invention discloses a PIOS with a high extinction ratio based on slab PhCs which comprises an upper slab PhC and a lower slab PhC connected as a whole; the upper slab PhC is a first square-lattice slab PhC, the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating square pillar, a single first flat dielectric pillar and a background dielectric; the first flat dielectric pillar includes a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or a high-refractive-index flat films, or a low-refractive-index dielectric; the lower slab PhC is a second square-lattice slab PhC with a complete bandgap, the unit cell of said second square-lattice slab PhC includes a high-refractive-index rotating square pillar, a single second flat dielectric pillar and a background dielectric is a low-refractive-index dielectric; and an normalized frequency of the optical switch is 0.41 to 0.4167.

公开(公告)号：US20170277014A1

公开(公告)日：2017-09-28

申请号：US15620809

申请日：2017-06-12

Applicant: ZHENGBIAO OUYANG

Inventor： ZHENGBIAO OUYANG ,  GUOHUA WEN

IPC: G02F1/313

CPC classification number: G02F1/3133 ,  G02B6/122 ,  G02B26/00 ,  G02F2201/06 ,  G02F2202/32 ,  G02F2203/07

Abstract: The present invention discloses a TEOS based on slab PhCs with a high DOP and large EXR, which comprises an upper slab PhC and a lower slab PhC; the upper slab PhC is a first square-lattice slab PhC with a TM bandgap and a complete bandgap, wherein the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single first flat dielectric pillar and a background dielectric, the first flat dielectric pillar includes a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or a high-refractive-index flat film, or a low-refractive-index dielectric; the lower slab PhC is a second square lattice slab PhC with a TM bandgap and complete bandgap, wherein the unit cell of the second square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single second flat dielectric pillar and a background dielectric, and an normalized operating frequency of the TEOS is 0.453 to 0.458.

公开(公告)号：US20170277015A1

公开(公告)日：2017-09-28

申请号：US15620818

申请日：2017-06-12

Applicant: ZHENGBIAO OUYANG

Inventor： ZHENGBIAO OUYANG ,  GUOHUA WEN

IPC: G02F1/313

CPC classification number: G02F1/3133 ,  G02B6/122 ,  G02B26/00 ,  G02F2201/06 ,  G02F2202/32 ,  G02F2203/07

Abstract: The present invention discloses a TMOS with a high extinction ratio based on slab PhCs which comprises an upper slab PhC and a lower slab PhC connected as a whole; the upper slab PhC is called as a first square-lattice slab PhC, wherein the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating-square pillar, three first flat dielectric pillars and a background dielectric, and the first flat dielectric pillars includes a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or of 1 to 3 high-refractive-index flat films, or of a low-refractive-index dielectric; the lower slab PhC is a second square-lattice slab PhC with a complete bandgap, the unit cell of the second square-lattice slab PhC includes a high-refractive-index rotating-square pillar, three second flat dielectric pillars and a background dielectric is a low-refractive-index dielectric and an normalized operating frequency of the TMOS is 0.4057 to 0.406.

公开(公告)号：US20170285440A1

公开(公告)日：2017-10-05

申请号：US15626156

申请日：2017-06-18

Applicant: ZHENGBIAO OUYANG

Inventor： ZHENGBIAO OUYANG ,  GUOHUA WEN

IPC: G02F1/313

CPC classification number: G02F1/3133 ,  G02B6/122 ,  G02B6/1225 ,  G02B2006/12145 ,  G02F2201/06 ,  G02F2202/32 ,  G02F2203/07

Abstract: The present invention discloses a TEOS with a high extinction ratio based on slab PhCs which comprises an upper slab PhC and a lower slab PhC connected as a whole; the upper slab PhC is a first square-lattice slab PhC, the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating-square pillar, three first flat dielectric pillars and a background dielectric, the first flat dielectric pillars include a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or 1 to 3 high-refractive-index flat films, or a low-refractive-index dielectric; the lower slab PhC is a second square-lattice slab PhC with a complete bandgap, the unit cell of the second square-lattice slab PhC includes a high-refractive-index rotating-square pillar, three second flat dielectric pillars and a background dielectric is a low-refractive-index dielectric; and an normalized operating frequency of the TEOS is 0.4057 to 0.406.

公开(公告)号：US20170285439A1

公开(公告)日：2017-10-05

申请号：US15620801

申请日：2017-06-12

Applicant: ZHENGBIAO OUYANG

Inventor： ZHENGBIAO OUYANG ,  GUOHUA WEN

IPC: G02F1/313

CPC classification number: G02F1/3133 ,  G02B6/122 ,  G02B6/1225 ,  G02B2006/12145 ,  G02F2201/06 ,  G02F2202/32 ,  G02F2203/07

Abstract: The present invention discloses a TMOS based on slab PhCs with a high DOP and a large EXR, which comprises an upper slab PhC and a lower slab PhC; the upper slab PhC is called as a first square-lattice slab PhC with a TE bandgap, the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single first flat dielectric pillar and a background dielectric, the first flat dielectric pillar includes a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or a high-refractive-index flat film, or a low-refractive-index dielectric; the lower slab PhC is a second square-lattice slab PhC with a complete bandgap, wherein the unit cell of the second square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single second flat dielectric pillar and a background dielectric, and a normalized operating frequency of the TMOS with high DOP and large extinction ratio is 0.252 to 0.267.