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公开(公告)号：US20180159293A1
公开(公告)日：2018-06-07
申请号：US15047090
申请日：2016-02-18
发明人： Jock T. Bovington , Xuezhe Zheng
CPC分类号： H01S3/083 , G02F1/0147 , G02F1/3133 , G02F2201/58 , G02F2203/58 , H01S3/06791 , H01S3/1301 , H01S5/0687 , H01S5/1071 , H01S5/142 , H01S5/4068 , H01S5/4087 , H01S5/5045 , H04B10/572 , H04J14/02
摘要： An optical source includes semiconductor optical amplifiers, with a semiconductor other than silicon, which provide an optical gain medium. Moreover, a photonic chip in the optical source, which is optically coupled to the semiconductor optical amplifiers, includes ring resonators that selectively pass corresponding optical signals having carrier wavelengths provided by the semiconductor optical amplifiers, where a given ring resonator and a reflector on one of the semiconductor optical amplifier defines an optical cavity, and the ring resonators have different radii with associated resonance wavelengths corresponding to the carrier wavelengths. Furthermore, the photonic chip includes a shared ring resonator, optically coupled to the ring resonators, that selectively filters the optical signals, where the shared ring resonator has a different radius than the radii of the ring resonators with an associated resonance wavelength, and a free-spectral range of the shared ring resonator defines a spacing between the carrier wavelengths in the optical signal.
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公开(公告)号：US20170285440A1
公开(公告)日：2017-10-05
申请号：US15626156
申请日：2017-06-18
申请人： ZHENGBIAO OUYANG
发明人： ZHENGBIAO OUYANG , GUOHUA WEN
IPC分类号： G02F1/313
CPC分类号： G02F1/3133 , G02B6/122 , G02B6/1225 , G02B2006/12145 , G02F2201/06 , G02F2202/32 , G02F2203/07
摘要： The present invention discloses a TEOS with a high extinction ratio based on slab PhCs which comprises an upper slab PhC and a lower slab PhC connected as a whole; the upper slab PhC is a first square-lattice slab PhC, the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating-square pillar, three first flat dielectric pillars and a background dielectric, the first flat dielectric pillars include a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or 1 to 3 high-refractive-index flat films, or a low-refractive-index dielectric; the lower slab PhC is a second square-lattice slab PhC with a complete bandgap, the unit cell of the second square-lattice slab PhC includes a high-refractive-index rotating-square pillar, three second flat dielectric pillars and a background dielectric is a low-refractive-index dielectric; and an normalized operating frequency of the TEOS is 0.4057 to 0.406.
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公开(公告)号：US20170285439A1
公开(公告)日：2017-10-05
申请号：US15620801
申请日：2017-06-12
申请人： ZHENGBIAO OUYANG
发明人： ZHENGBIAO OUYANG , GUOHUA WEN
IPC分类号： G02F1/313
CPC分类号： G02F1/3133 , G02B6/122 , G02B6/1225 , G02B2006/12145 , G02F2201/06 , G02F2202/32 , G02F2203/07
摘要： The present invention discloses a TMOS based on slab PhCs with a high DOP and a large EXR, which comprises an upper slab PhC and a lower slab PhC; the upper slab PhC is called as a first square-lattice slab PhC with a TE bandgap, the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single first flat dielectric pillar and a background dielectric, the first flat dielectric pillar includes a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or a high-refractive-index flat film, or a low-refractive-index dielectric; the lower slab PhC is a second square-lattice slab PhC with a complete bandgap, wherein the unit cell of the second square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single second flat dielectric pillar and a background dielectric, and a normalized operating frequency of the TMOS with high DOP and large extinction ratio is 0.252 to 0.267.
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公开(公告)号：US20170227829A1
公开(公告)日：2017-08-10
申请号：US15496425
申请日：2017-04-25
申请人： Chen-Kuo Sun
发明人： Chen-Kuo Sun , Dingbo Chen
CPC分类号： G02F1/3133 , G02B6/12004 , G02B6/136 , G02B6/138 , G02B2006/12061 , G02F1/065 , G02F2001/3135
摘要： A method for manufacturing an electro-optically coupled switch in accordance with the present invention requires a sequential reconfiguration of a layer of semiconductor material. To begin, a base member is created wherein the semiconductor layer is positioned on a layer of insulator material with the insulator material positioned between the semiconductor layer and a semiconductor substrate. In sequence, with a first etch, the semiconductor layer is etched to create waveguides on opposite sides of a slot. In a second etch, the slot is deepened to expose the layer of insulator material in the slot. With a third contact pad doping process, pads can be positioned on top of the layer of insulator material for electrical contact with the respective waveguides. Metal contacts can then be placed on the contact pads, the slot can be filled with an electro-optical polymer and, if needed, the polymer can be poled.
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5.发明授权公开(公告)号：US09513531B1
公开(公告)日：2016-12-06
申请号：US15254187
申请日：2016-09-01
申请人： FUJITSU LIMITED
发明人： Tomoyuki Akiyama
CPC分类号： G02F1/015 , G02B6/29338 , G02B6/29341 , G02F1/0121 , G02F1/0147 , G02F1/2257 , G02F1/3133 , G02F2201/08
摘要： An optical semiconductor element includes a ring modulator, and a light absorbing material provided at a position apart from a path for a modulated light which is guided by the ring modulator, the light absorbing material absorbing a light leaked out of a ring waveguide of the ring modulator, and increasing a temperature of the ring waveguide.
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公开(公告)号：US08406579B2
公开(公告)日：2013-03-26
申请号：US13038553
申请日：2011-03-02
申请人： Hung-Chih Lu , Jen-Inn Chyi
发明人： Hung-Chih Lu , Jen-Inn Chyi
CPC分类号： G02F1/3133 , G02F2001/311 , G02F2203/585
摘要： A wavelength division multiplexing and optical modulation apparatus includes at least two modulation region-added grating-assisted cross-state directional coupler units and a modulation region-added cross-state directional coupler. The modulation region-added grating-assisted cross-state directional coupler units and the modulation region-added cross-state directional coupler unit are connected to one another in serial. Each of the modulation region-added grating-assisted cross-state directional coupler units each includes a modulation region-added cross-state directional coupler, a grating and a modulation region. The modulation region-added cross-state directional coupler unit includes an output waveguide, an input waveguide and a modulation region.
摘要翻译： 波分复用和光调制装置包括至少两个调制区域附加的光栅辅助交叉定向耦合器单元和调制区域增加的交叉定向耦合器。 调制区域附加的光栅辅助交叉定向耦合器单元和调制区域增加的交叉定向耦合器单元彼此串联连接。 调制区域附加光栅辅助交叉定向耦合器单元中的每一个均包括调制区域增加的交叉状态定向耦合器，光栅和调制区域。 调制区域增加的交叉定向耦合器单元包括输出波导，输入波导和调制区域。
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公开(公告)号：US20130056623A1
公开(公告)日：2013-03-07
申请号：US13697866
申请日：2011-05-13
申请人： Michal Lipson , Sasikanth Manipatruni , Long Chen , Kyle Preston
发明人： Michal Lipson , Sasikanth Manipatruni , Long Chen , Kyle Preston
IPC分类号： H01L31/105 , G01J1/04 , H01L31/18
CPC分类号： G02B6/29338 , G02B6/12007 , G02B6/136 , G02B6/29341 , G02B2006/12142 , G02F1/3133 , Y02P70/521
摘要： An electro-optic modulator structure, a method for fabricating the electro-optic modulator structure, a method for operating an electro-optic modulator device that derives from the electro-optic modulator structure and a related communications apparatus that includes the electro-optic modulator structure all are directed towards effecting a comparatively low voltage operation of the electro-optic modulator device predicated upon consideration of optimal charge carrier injection efficiency characteristics of a PIN diode charge carrier injection based micro-ring electro-optic modulator structure as a function of applied bias voltage. To realize the foregoing result, at least in part, the PIN diode charge carrier injection based electro-optic modulator structure includes at least one of a p-doped region and an n-doped region that has a relatively high volume dopant concentration at a surface thereof.
摘要翻译： 电光调制器结构，用于制造电光调制器结构的方法，用于操作从电光调制器结构导出的电光调制器装置的方法和包括电光调制器结构的相关通信装置 所有这些都旨在实现电光调制器装置的相当低的电压操作，其基于考虑作为施加的偏置电压的基于PIN二极管电荷载流子注入的微环电光调制器结构的最佳电荷载流子注入效率特性 。 为了实现上述结果，至少部分地基于PIN二极管电荷载流子注入的电光调制器结构包括在表面上具有相对高的体积掺杂剂浓度的p掺杂区域和n掺杂区域中的至少一个 其中。
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公开(公告)号：US08131119B2
公开(公告)日：2012-03-06
申请号：US12845035
申请日：2010-07-28
CPC分类号： G02F1/025 , G02F1/0147 , G02F1/3133 , H01L2224/48091 , H01L2224/48472 , Y10T29/49124 , H01L2924/00014
摘要： Embodiments of an optical device, an array of optical devices, and a technique for fabricating the optical device or the array are described. This optical device is implemented on a substrate (such as silicon), and includes a thermally tunable optical waveguide that has good thermal isolation from its surroundings. In particular, a portion of a semiconductor in the optical device, which includes the optical waveguide, is free standing above a gap between the semiconductor layer and the substrate. By reducing the thermal coupling between the optical waveguide and the external environment, the optical device can be thermally tuned with significantly less power consumption.
摘要翻译： 描述了光学器件，光学器件阵列以及用于制造光学器件或阵列的技术的实施例。 该光学器件实现在基板（例如硅）上，并且包括具有与其周围环境良好热隔离的热可调谐光波导。 特别地，包括光波导的光学器件中的半导体的一部分自由地位于半导体层和衬底之间的间隙之上。 通过减少光波导和外部环境之间的热耦合，可以以显着更少的功耗来热调谐光学器件。
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公开(公告)号：US20100290736A1
公开(公告)日：2010-11-18
申请号：US12845035
申请日：2010-07-28
IPC分类号： G02B6/12 , H01L21/306
CPC分类号： G02F1/025 , G02F1/0147 , G02F1/3133 , H01L2224/48091 , H01L2224/48472 , Y10T29/49124 , H01L2924/00014
摘要： Embodiments of an optical device, an array of optical devices, and a technique for fabricating the optical device or the array are described. This optical device is implemented on a substrate (such as silicon), and includes a thermally tunable optical waveguide that has good thermal isolation from its surroundings. In particular, a portion of a semiconductor in the optical device, which includes the optical waveguide, is free standing above a gap between the semiconductor layer and the substrate. By reducing the thermal coupling between the optical waveguide and the external environment, the optical device can be thermally tuned with significantly less power consumption.
摘要翻译： 描述了光学器件，光学器件阵列以及用于制造光学器件或阵列的技术的实施例。 该光学器件实现在基板（例如硅）上，并且包括具有与其周围环境良好热隔离的热可调谐光波导。 特别地，包括光波导的光学器件中的半导体的一部分自由地位于半导体层和衬底之间的间隙之上。 通过减少光波导和外部环境之间的热耦合，可以以显着更少的功耗来热调谐光学器件。
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10.发明申请HITLESS TUNING AND SWITCHING OF OPTICAL RESONATOR AMPLITUDE AND PHASE RESPONSES 有权光学谐振器振幅和相位响应的无线调谐和切换公开(公告)号：US20100209038A1
公开(公告)日：2010-08-19
申请号：US12532796
申请日：2008-03-26
申请人： Milos Popovic , Michael R. Watts
发明人： Milos Popovic , Michael R. Watts
CPC分类号： G02F1/3133 , G02B6/12007 , G02B2006/12145 , G02F1/0147 , G02F1/3132 , G02F2001/212 , G02F2202/103 , G02F2203/055 , G02F2203/15 , G02F2203/585 , H04J14/021
摘要： A hitless tunable filter may include a ring resonator, a Mach-Zehnder coupler, and first and second phase shifters. The Mach-Zehnder coupler may include a switching arm that is coupled to the ring resonator at first and second coupling points. The first phase shifter may be used to introduce a first phase shift to light propagating through the ring resonator, while the second phase shifter may be used to introduce a second phase shift to light propagating through the Mach-Zehnder coupler. The Mach-Zehnder coupler may have a free spectral range substantially equal to a free spectral range of the ring resonator divided by a non-negative integer.
摘要翻译： 无触点可调滤波器可以包括环形谐振器，马赫 - 曾德尔耦合器以及第一和第二移相器。 马赫 - 曾德尔耦合器可以包括在第一和第二耦合点处耦合到环形谐振器的开关臂。 第一移相器可以用于对通过环形谐振器传播的光引入第一相移，而第二移相器可以用于对通过马赫 - 曾德尔耦合器传播的光引入第二相移。 马赫曾德尔耦合器可以具有基本上等于环形谐振器的自由光谱范围除以非负整数的自由光谱范围。
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