Method and device for high speed electrolytic in-process dressing for ultra-precision grinding
    1.
    发明授权
    Method and device for high speed electrolytic in-process dressing for ultra-precision grinding 失效
    用于超精密磨削的高速电解过程中修整的方法和装置

    公开(公告)号:US06547648B1

    公开(公告)日:2003-04-15

    申请号:US09687548

    申请日:2000-10-13

    CPC classification number: B24B53/001 B24B53/053

    Abstract: This invention is a process and device for high speed electrolytic in-process dressing (HELID). The device of the present invention may be provided as an add on to an existing grinding machine or may be integrated into a grinding machine as a subsystem. Grinding machines which are subject to the present invention include, but are not limited to, surface, cylindrical, centerless and double-disk grinding machines.

    Abstract translation: 本发明是用于高速电解过程中敷料(HELID)的方法和装置。 本发明的装置可以作为添加到现有的研磨机上,或者可以作为子系统集成到研磨机中。 受本发明影响的研磨机包括但不限于表面,圆柱形,无心和双盘磨床。

    Flexible Parallel Manipulator For Nano-, Meso- or Macro-Positioning With Multi-Degrees of Freedom
    2.
    发明申请
    Flexible Parallel Manipulator For Nano-, Meso- or Macro-Positioning With Multi-Degrees of Freedom 审中-公开
    用于具有多自由度的纳米,中间或微距定位的柔性并联机械手

    公开(公告)号:US20080257096A1

    公开(公告)日:2008-10-23

    申请号:US11909852

    申请日:2006-03-30

    CPC classification number: B25J17/0266 B25J7/00 Y10T74/20348

    Abstract: The present invention is a friction- and backlash-fee flexible parallel manipulator device. The device is composed of multiple elastic fiber legs with various physical properties, a top platform, and a bottom platform. With multiple degrees of freedom, the motion of the top platform is controlled by the multiple elastic fiber legs whose lengths or curvatures between the top and bottom platforms are controlled based on the required motion of the top platform. The device can be used for nano-, micro-, or meso-manipulation.

    Abstract translation: 本发明是一种摩擦和间隙弹性平行机械手装置。 该装置由具有各种物理性质的多个弹性纤维腿组成,顶部平台和底部平台。 具有多个自由度,顶部平台的运动由多个弹性纤维腿控制,多个弹性纤维腿基于顶部平台的所需运动来控制顶部和底部平台之间的长度或曲率。 该器件可用于纳米,微观或中观操纵。

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