Method of measuring thin layers using SIMS
    1.
    发明授权
    Method of measuring thin layers using SIMS 有权
    使用SIMS测量薄层的方法

    公开(公告)号:US07579590B2

    公开(公告)日:2009-08-25

    申请号:US11888576

    申请日:2007-08-01

    IPC分类号: G01N23/225 H01L21/66

    CPC分类号: G01B15/02

    摘要: A method for measuring the thickness of a layer is provided, comprising (a) providing a structure (101) comprising a first layer disposed on a second layer; (b) impinging (103) the structure with a first ion beam comprising a first isotope, thereby sputtering off a portion of the first layer which contains a second isotope and exposing a portion of the second layer; and (c) determining (105) the thickness of the first layer by measuring the amount of the second isotope which is sputtered off.

    摘要翻译: 提供了一种用于测量层的厚度的方法,包括(a)提供包括设置在第二层上的第一层的结构(101) (b)用包括第一同位素的第一离子束撞击(103)结构,从而溅射包含第二同位素的第一层的一部分并暴露第二层的一部分; 和(c)通过测量溅射出的第二同位素的量来确定(105)第一层的厚度。