公开(公告)号：US20090294806A1

公开(公告)日：2009-12-03

申请号：US12128996

申请日：2008-05-29

申请人： Zhong DONG ,  Ching-Hwa CHEN

发明人： Zhong DONG ,  Ching-Hwa CHEN

IPC分类号： H01L29/78 ,  H01L21/322

CPC分类号： H01L21/324 ,  H01L21/28167 ,  H01L21/28238 ,  H01L29/78

摘要： Performance of field effect transistors and other channel dependent devices formed on a monocrystalline substrate is improved by carrying out a high temperature anneal in a nitrogen releasing atmosphere while the substrate is coated by a sacrificial oxide coating containing easily diffusible atoms that can form negatively charged ions and can diffuse deep into the substrate. In one embodiment, the easily diffusible atoms comprise at least 5% by atomic concentration of chlorine atoms in the sacrificial oxide coating and the nitrogen releasing atmosphere includes NO. The high temperature anneal is carried out for less than 10 hours at a temperature less than 1100° C.

摘要翻译： 通过在氮气释放气氛中进行高温退火，同时通过包含容易扩散的原子的牺牲氧化物涂层涂覆基底，从而改善在单晶衬底上形成的场效应晶体管和其它通道相关器件的性能，所述牺牲氧化物涂层可形成带负电荷的离子， 可以深层扩散到底物中。 在一个实施方案中，容易扩散的原子在牺牲氧化物涂层中包含至少5％的原子浓度的氯原子，并且氮气释放气氛包括NO。 高温退火在低于1100℃的温度下进行少于10小时。