公开(公告)号：US6087904A

公开(公告)日：2000-07-11

申请号：US163476

申请日：1998-09-30

申请人： Zhongmin Wen

发明人： Zhongmin Wen

IPC分类号： H03C1/40 ,  H03C1/36 ,  H03C1/38

CPC分类号： H03C1/36

摘要： The present invention provides a modulation circuit that has excellent modulation characteristics and can be designed as an MMIC. Consequently, this modulation circuit is such that the modulating wave input means is composed of a capacitor 21 and an inductor 22, the carrier input means is composed of a capacitor 23 and a resistance element 24, the self-bias means is composed of a resistance element 26 and a capacitor 27, the carrier selection means is composed of an inductor 22 and a capacitor 28, and the modulated wave output means is composed of a capacitor 28.

摘要翻译： 本发明提供一种具有优良调制特性的调制电路，可以设计成MMIC。 因此，该调制电路使得调制波输入装置由电容器21和电感器22组成，载体输入装置由电容器23和电阻元件24组成，自偏置装置由电阻 元件26和电容器27，载波选择装置由电感器22和电容器28构成，调制波输出装置由电容器28构成。

公开(公告)号：US5981443A

公开(公告)日：1999-11-09

申请号：US140661

申请日：1998-08-26

申请人： Zhongmin Wen

发明人： Zhongmin Wen

IPC分类号： C30B29/22 ,  C30B33/08 ,  H01L39/22 ,  H01L39/24

CPC分类号： H01L39/225 ,  Y10S428/93 ,  Y10S428/931 ,  Y10S505/702 ,  Y10T29/49014 ,  Y10T428/24917 ,  Y10T428/24926

摘要： A bicrystal substrate is formed by joining end faces of a first single crystal substrate and a second single crystal substrate, the end faces having different crystal orientations. A high critical temperature superconducting thin film is then epitaxially formed on the bicrystal substrate. The superconducting thin film is etched so as to form a first superconducting electrode on the first single crystal substrate, a second superconducting electrode on the second single crystal substrate, and a superconducting bridge across a joint between the first and second single crystal substrates and connecting the first electrode and the second electrode. A conductive film is formed on the superconducting bridge by vapor deposition, and is then etched so as to form a weak link on a part of the superconducting bridge over the joint.

摘要翻译： 通过连接第一单晶衬底和第二单晶衬底的端面形成双晶衬底，端面具有不同的晶体取向。 然后在双晶基板上外延形成高临界温度超导薄膜。 对超导薄膜进行蚀刻，以在第一单晶衬底上形成第一超导电极，在第二单晶衬底上形成第二超导电极，以及跨越第一和第二单晶衬底之间的接头的超导电桥， 第一电极和第二电极。 通过气相沉积在超导桥上形成导电膜，然后被蚀刻以便在接头上的超导桥的一部分上形成弱连接。

公开(公告)号：US5849669A

公开(公告)日：1998-12-15

申请号：US652680

申请日：1996-05-30

申请人： Zhongmin Wen

发明人： Zhongmin Wen

IPC分类号： C30B29/22 ,  C30B33/08 ,  H01L39/22 ,  H01L39/24

CPC分类号： H01L39/225 ,  Y10S428/93 ,  Y10S428/931 ,  Y10S505/702 ,  Y10T29/49014 ,  Y10T428/24917 ,  Y10T428/24926

摘要： A high critical temperature superconducting Josephson device includes a bicrystal substrate formed of a first single crystal substrate and a second single crystal substrate, with end faces of the first and second single crystal substrates having different crystal orientations and being joined to each other. A first superconducting electrode formed of a first film of a high critical temperature superconductor material is located on the first single crystal substrate, whereas a second superconducting electrode formed of a second film of a high critical temperature superconductor material is located on the second single crystal substrate. A bridge is formed of a third film of a high critical temperature superconductor material and located on the bicrystal substrate across a joint between said first and said second single crystal substrates. The bridge includes a first part formed on the first single crystal substrate and connected with the first electrode, a second part formed on the second single crystal substrate and connected with the second electrode, and a third part interposed between the first part and second part on the joint between the first and the second single crystal substrates. A weak link formed of a conductive film is located on a portion of said bridge and has a conductivity which is less than that of the first and second superconducting electrodes. The conductive film is formed over the joint so as to extend across the third part from the first part to the second part of the bridge. A superconductive path is formed from the first electrode to the second electrode via the first part of the bridge, the weak link and the second part of the bridge during a state in which the third part of the bridge is non-superconductive.

摘要翻译： 高临界温度超导约瑟夫逊器件包括由第一单晶衬底和第二单晶衬底形成的双晶衬底，第一和第二单晶衬底的端面具有不同的晶体取向并且彼此接合。 由第一高温超导材料的第一薄膜形成的第一超导电极位于第一单晶衬底上，而由第二高温超导材料的第二薄膜形成的第二超导电极位于第二单晶衬底上 。 桥由高临界温度超导体材料的第三薄膜形成，并位于双晶基板上，穿过所述第一和第二单晶基板之间的接头。 桥包括形成在第一单晶基板上并与第一电极连接的第一部分，形成在第二单晶基板上并与第二电极连接的第二部分，以及插入在第一部分和第二部分之间的第三部分 第一和第二单晶基板之间的接合。 由导电膜形成的弱连接部位于所述桥的一部分上，其导电率小于第一和第二超导电极的导电率。 导电膜形成在接头上，以便跨越第三部分从桥的第一部分延伸到第二部分。 在桥的第三部分不超导的状态下，通过桥的第一部分，桥的弱环和桥的第二部分，从第一电极到第二电极形成超导路径。