公开(公告)号：US11569177B2

公开(公告)日：2023-01-31

申请号：US16948518

申请日：2020-09-22

申请人： Zhuhai ACCESS Semiconductor Co., Ltd

发明人： Xianming Chen ,  Jindong Feng ,  Benxia Huang ,  Lei Feng ,  Jiangjiang Zhao ,  Wenshi Wang

IPC分类号： H01L21/48 ,  H01L23/498 ,  H01L23/538 ,  H01L23/552

摘要： Disclosed are a method for manufacturing a support frame structure and a support frame structure. The method includes steps of: providing a metal plate including a support region and an opening region; forming an upper dielectric hole and a lower dielectric hole respectively at an upper surface and a lower surface of the support region by photolithography, with a metal spacer connected between the upper dielectric hole and the lower dielectric hole; forming an upper metal pillar on an upper surface of the metal plate, and laminating an upper dielectric layer which covers the upper metal pillar and the upper dielectric hole; etching the metal spacer, forming a lower metal pillar on the lower surface of the metal plate, and laminating a lower dielectric layer which covers the lower metal pillar and the lower dielectric hole.