公开(公告)号：US20240183980A1

公开(公告)日：2024-06-06

申请号：US18285181

申请日：2022-03-29

Applicant: ams International AG

Inventor： Krishna Kanth AVALUR ,  Rajesh GUPTA

IPC: G01S17/04 ,  G01S7/481 ,  G09G3/3208

CPC classification number: G01S17/04 ,  G01S7/4816 ,  G09G3/3208 ,  G09G2320/0626 ,  G09G2360/14

Abstract: An optical proximity sensor comprises a photodiode, a light source configured to emit light and a measurement circuit coupled to the photodiode. The measurement circuit is configured to measure light received by the photodiode in a first phase when the light source is turned off and in a second phase when the light source is turned on. The measurement circuit determines the difference between the light measured in the first and second phases, wherein the first phase for off measurement is longer than the second phase for on measurement.

公开(公告)号：US20240038908A1

公开(公告)日：2024-02-01

申请号：US18267886

申请日：2021-12-08

Applicant: ams International AG

Inventor： Rajesh GUPTA

IPC: H01L31/0224 ,  H01L31/028 ,  H01L31/103

CPC classification number: H01L31/022408 ,  H01L31/028 ,  H01L31/103

Abstract: A photo sensor cell includes a semiconductor body having a well region of a first conductivity type and at least one base region of a second conductivity type different from the first conductivity type. The photo sensor cell also includes a well electrode electrically contacting the well region and a base electrode electrically contacting the base region. The photo sensor cell further includes a collection gate electrode located on top of the well region next to the base region and, seen in top view of the collection gate electrode, at least partially surrounding the base region. The collection gate electrode includes at least one gate extension running away from the base region and terminating within the semiconductor body, seen in top view of the collection gate electrode.