公开(公告)号：US20240063345A1

公开(公告)日：2024-02-22

申请号：US18260621

申请日：2021-01-19

Applicant: ams-OSRAM International GmbH

Inventor： Fabian KOPP ,  Attila MOLNAR ,  Hong Pin LOH ,  Ban Loong Chris NG

IPC: H01L33/46 ,  H01L25/075

CPC classification number: H01L33/46 ,  H01L25/0753 ,  H01L2933/0025

Abstract: A radiation-emitting semiconductor chip may include a semiconductor layer sequence having a first semiconductor layer of a first doping type and a second semiconductor layer of a second doping type. The chip may also include a first dielectric layer and a second dielectric layer arranged on the semiconductor layer sequence. A first recess may be arranged in the semiconductor layer sequence in a border region of the radiation-emitting semiconductor chip completely penetrating the first semiconductor layer. The first dielectric layer may cover the semiconductor layer sequence in the border region completely. The border region may be free of the second dielectric layer in an edge region. In addition, a method is disclosed for producing a radiation-emitting semiconductor chip.