公开(公告)号：US20030000829A1

公开(公告)日：2003-01-02

申请号：US10214478

申请日：2002-08-05

Applicant: iFire Technology Inc.

Inventor： Alexander Kosyachkov

IPC: C23C014/32

CPC classification number: C09K11/7731 ,  C23C14/0057 ,  C23C14/0623

Abstract: A method of deposition of a phosphor in a single-source sputtering process, in which the phosphor is selected from the group consisting of ternary, quaternary or higher thioaluminate, thiogallate and thioindate phosphors, and composites thereof, synthesized with cations selected from Groups IIA and IIB of the Periodic Table of Elements. The phosphor is of a pre-determined composition of elements. The method comprising sputtering in a hydrogen sulphide atmosphere from a single source composition so as to deposit a composition on a substrate. The composition of the targets of the single source has a relative increase in concentration of elements of the phosphor that have a lower atomic weight compared to other elements in said phosphor. The relative increase is controlled such that deposition of the pre-determined composition is effected on the substrate. Preferred phosphors are barium thioaluminate (BaAl2S4:Eu), and barium magnesium thioaluminates.

Abstract translation: 一种在单源溅射工艺中沉积磷光体的方法，其中荧光体选自三元，四元或更高硫代铝酸盐，硫代镓酸盐和硫酸盐磷光体及其复合材料，其与选自IIA族和 元素周期表IIB。 荧光体是元素的预定组成。 该方法包括在单一源组合物中在硫化氢气氛中溅射以将组合物沉积在基底上。 与所述荧光体中的其它元素相比，单源的靶的组成相对于具有较低原子量的荧光体元素的浓度相对增加。 控制相对增加使得预先确定的组合物在衬底上进行沉积。 优选的磷光体是硫铝酸钡（BaAl 2 S 4：Eu）和硫铝酸钡镁。