Accuracy on-chip clock generator for multi-clock driven single chip solution
    1.
    发明授权
    Accuracy on-chip clock generator for multi-clock driven single chip solution 有权
    精准片上时钟发生器,用于多时钟驱动单芯片解决方案

    公开(公告)号:US07961040B2

    公开(公告)日:2011-06-14

    申请号:US12196349

    申请日:2008-08-22

    申请人: Gang Xu

    发明人: Gang Xu

    IPC分类号: H03D3/24

    摘要: A mixed-signal chip is described. The mixed-signal chip comprises a first portion of analog circuit and second portion of digital circuit, an on-chip precision oscillator residing on the first analog portion, the precision oscillator has a precision frequency; a first on-chip non-precision tunable oscillator from a first clock domain residing on the first analog portion, the first non-precision tunable oscillator has a first adjustable frequency; a noise detector for detecting a first noise in the first clock domain; a frequency adjusting register for storing a first desired frequency value of the first on-chip non-precision tunable oscillator, wherein the first desired frequency value is determined based on the first detected noise; a control circuit for adjusting the adjustable frequency of the first non-precision tunable oscillator to the first desired frequency value by using the precision frequency of the on-chip precision oscillator as a reference.

    摘要翻译: 描述了混合信号芯片。 混合信号芯片包括模拟电路的第一部分和数字电路的第二部分,位于第一模拟部分上的片上精密振荡器,精密振荡器具有精度频率; 所述第一非精度可调谐振荡器具有第一可调频率;第一非精度可调谐振荡器,具有第一可调谐振荡器, 噪声检测器,用于检测第一时钟域中的第一噪声; 频率调整寄存器,用于存储第一片上非精密可调振荡器的第一期望频率值,其中基于第一检测到的噪声确定第一期望频率值; 控制电路,通过使用片上精密振荡器的精度频率作为基准,将第一非精密可调振荡器的可调频率调整到第一期望频率值。

    Image sensor having integrated thin film infrared filter
    2.
    发明授权
    Image sensor having integrated thin film infrared filter 有权
    具有集成薄膜红外滤光片的图像传感器

    公开(公告)号:US07388242B2

    公开(公告)日:2008-06-17

    申请号:US10922211

    申请日:2004-08-19

    申请人: Katsumi Yamamoto

    发明人: Katsumi Yamamoto

    IPC分类号: H01L31/062

    CPC分类号: H01L27/14621 H01L27/14627

    摘要: An image sensor is disclosed. The image sensor includes a plurality of pixels formed in a semiconductor substrate, each pixel including a light sensitive element. Further, a multilayer stack is formed over the pixels, the multilayer stack adapted to filter incident light in the infrared region. Finally, micro-lenses are formed over the multilayer stack and over the light sensitive element.

    摘要翻译: 公开了一种图像传感器。 图像传感器包括形成在半导体衬底中的多个像素,每个像素包括光敏元件。 此外,在像素上形成多层堆叠,多层堆叠适于滤除红外区域中的入射光。 最后,微透镜形成在多层叠层上并在光敏元件之上。

    Image sensor having micro-lens array separated with ridge structures and method of making
    4.
    发明授权
    Image sensor having micro-lens array separated with ridge structures and method of making 有权
    图像传感器具有用脊结构分离的微透镜阵列和制作方法

    公开(公告)号:US08031253B2

    公开(公告)日:2011-10-04

    申请号:US10603729

    申请日:2003-06-24

    申请人: Katsumi Yamamoto

    发明人: Katsumi Yamamoto

    CPC分类号: H01L27/14627 H01L27/14685

    摘要: An image sensor having micro-lenses is disclosed. The image sensor comprises a plurality of pixels formed in a semiconductor substrate, each pixel including a light sensitive element. A micro-lens is formed over each of the light sensitive elements. Finally, a raised ridge structure surrounds each of the micro-lenses.

    摘要翻译: 公开了一种具有微透镜的图像传感器。 图像传感器包括形成在半导体衬底中的多个像素,每个像素包括光敏元件。 在每个光敏元件上形成微透镜。 最后,围绕每个微透镜的凸脊结构。