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    Process for the manufacture of group III nitride targets for use in sputtering and similar equipment
    1.
    发明授权
    Process for the manufacture of group III nitride targets for use in sputtering and similar equipment 失效
    用于制造用于溅射和类似设备的III族氮化物靶的工艺

    公开(公告)号：US6113985A

    公开(公告)日：2000-09-05

    申请号：US300053

    申请日：1999-04-27

    申请人： Michael J. Suscavage ,  Meckie T. Harris ,  David F. Bliss ,  John S. Bailey ,  Michael Callahan

    发明人： Michael J. Suscavage ,  Meckie T. Harris ,  David F. Bliss ,  John S. Bailey ,  Michael Callahan

    IPC分类号： C23C14/34 ,  C23C16/30 ,  C23C16/08

    CPC分类号： C23C16/303 ,  C23C14/3414

    摘要： Using a GaN growth furnace, at least three different techniques can be used for forming the targets for the deposition of thin films. In the first, nitrides can be deposited as a dense coating on a target backing plate for use as a target. In this approach, the backing plate is placed near the Group III metal. During processing, the Group III metal or metal halide vaporizes and reacts with the nitrogen source to deposit a dense polycrystalline layer on the backing plate. To build up a thick layer on the backing plate, the backing plate is repeatedly placed in the processing furnace until a satisfactory thickness is attained. For the second approach, a properly shaped reaction vessel, the dense, thick Group III nitride crust that forms on top of the Group III metal during the process can be used directly or mechanically altered to meet the size requirements for a sputtering target holder. As a third approach, the Group III nitride material can be ground into a fine powder using traditional ceramic powder processing methods and then pressed to consolidate the powder into a sputtering target. The third processing option would typically lead to a low density target; however, this "green" compact can then be reinserted into the same processing apparatus that the original powder was synthesized to infiltrate the open pores with the same or another group III metal nitride. This would produce a high density, thick target.

    摘要翻译： 使用GaN生长炉，可以使用至少三种不同的技术来形成用于沉积薄膜的靶。 首先，可以将氮化物作为致密涂层沉积在目标背板上以用作靶。 在这种方法中，背板放置在III族金属附近。 在加工过程中，III族金属或金属卤化物蒸发并与氮源反应，以在背板上沉积致密的多晶层。 为了在背板上建立厚层，将背板重复放置在处理炉中，直到达到令人满意的厚度。 对于第二种方法，适当成形的反应容器，在工艺过程中形成在III族金属顶部上的致密，厚的III族氮化物外壳可直接或机械地改变以满足溅射靶架的尺寸要求。 作为第三种方法，可以使用传统的陶瓷粉末处理方法将III族氮化物材料研磨成细粉末，然后压制以将粉末固结成溅射靶。 第三种处理方案通常会导致低密度目标; 然而，这种“绿色”压块然后可以重新插入与原始粉末合成以相同或另一III族金属氮化物渗透开孔的相同处理装置中。 这将产生高密度，厚的目标。