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公开(公告)号：US09350295B2
公开(公告)日：2016-05-24
申请号：US12948225
申请日：2010-11-17
Applicant: Koichiro Kamata
Inventor： Koichiro Kamata
IPC: H01L29/786 , H03C1/36
CPC classification number: H01L29/7869 , G06K19/07775 , H01L23/66 , H01L27/0629 , H01L28/20 , H01L28/40 , H01L29/78693 , H01L29/78696 , H01L2223/6677 , H03C1/36 , H04M2201/04 , H04M2201/06
Abstract: A modulation circuit includes a load and a transistor serving as a switch. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. The off-state current of the transistor is 1×10−13 A or less. A modulation circuit includes a load, a transistor serving as a switch, and a diode. The load, the transistor, and the diode are connected in series between the terminals of an antenna. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. An off-state current of the transistor is 1×10−13 A or less. On/off of the transistor is controlled in accordance with a signal inputted to a gate of the transistor. The load is a resistor, a capacitor, or a combination of a resistor and a capacitor.
Abstract translation: 调制电路包括负载和用作开关的晶体管。 该晶体管具有氢浓度为5×1019 / cm3以下的氧化物半导体层。 晶体管的截止电流为1×10-13A或更小。 调制电路包括负载，用作开关的晶体管和二极管。 负载，晶体管和二极管串联连接在天线的端子之间。 该晶体管具有氢浓度为5×1019 / cm3以下的氧化物半导体层。 晶体管的截止电流为1×10-13A或更小。 根据输入到晶体管的栅极的信号来控制晶体管的导通/截止。 负载是电阻器，电容器或电阻器和电容器的组合。
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公开(公告)号：US20160336455A1
公开(公告)日：2016-11-17
申请号：US15159182
申请日：2016-05-19
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Koichiro KAMATA
IPC: H01L29/786 , G06K19/077 , H01L23/66 , H01L27/06 , H01L49/02
CPC classification number: H01L29/7869 , G06K19/07775 , H01L23/66 , H01L27/0629 , H01L28/20 , H01L28/40 , H01L29/78693 , H01L29/78696 , H01L2223/6677 , H03C1/36 , H04M2201/04 , H04M2201/06
Abstract: A modulation circuit includes a load and a transistor serving as a switch. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. The off-state current of the transistor is 1×10−13 A or less. A modulation circuit includes a load, a transistor serving as a switch, and a diode. The load, the transistor, and the diode are connected in series between the terminals of an antenna. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. An off-state current of the transistor is 1×10−13 A or less. On/off of the transistor is controlled in accordance with a signal inputted to a gate of the transistor. The load is a resistor, a capacitor, or a combination of a resistor and a capacitor.
Abstract translation: 调制电路包括负载和用作开关的晶体管。 该晶体管具有氢浓度为5×1019 / cm3以下的氧化物半导体层。 晶体管的截止电流为1×10-13A或更小。 调制电路包括负载，用作开关的晶体管和二极管。 负载，晶体管和二极管串联连接在天线的端子之间。 该晶体管具有氢浓度为5×1019 / cm3以下的氧化物半导体层。 晶体管的截止电流为1×10-13A或更小。 根据输入到晶体管的栅极的信号来控制晶体管的导通/截止。 负载是电阻器，电容器或电阻器和电容器的组合。
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Patent Agency Ranking
公开(公告)号：US20110121911A1
公开(公告)日：2011-05-26
申请号：US12948225
申请日：2010-11-17
Applicant: Koichiro KAMATA
Inventor： Koichiro KAMATA
IPC: H03C1/00
CPC classification number: H01L29/7869 , G06K19/07775 , H01L23/66 , H01L27/0629 , H01L28/20 , H01L28/40 , H01L29/78693 , H01L29/78696 , H01L2223/6677 , H03C1/36 , H04M2201/04 , H04M2201/06
Abstract: A modulation circuit includes a load and a transistor serving as a switch. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. The off-state current of the transistor is 1×10−13 A or less. A modulation circuit includes a load, a transistor serving as a switch, and a diode. The load, the transistor, and the diode are connected in series between the terminals of an antenna. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. An off-state current of the transistor is 1×10−13 A or less. On/off of the transistor is controlled in accordance with a signal inputted to a gate of the transistor. The load is a resistor, a capacitor, or a combination of a resistor and a capacitor.
Abstract translation: 调制电路包括负载和用作开关的晶体管。 该晶体管具有氢浓度为5×1019 / cm3以下的氧化物半导体层。 晶体管的截止电流为1×10-13A或更小。 调制电路包括负载，用作开关的晶体管和二极管。 负载，晶体管和二极管串联连接在天线的端子之间。 该晶体管具有氢浓度为5×1019 / cm3以下的氧化物半导体层。 晶体管的截止电流为1×10-13A或更小。 根据输入到晶体管的栅极的信号来控制晶体管的导通/截止。 负载是电阻器，电容器或电阻器和电容器的组合。
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公开(公告)号：US20240310887A1
公开(公告)日：2024-09-19
申请号：US18121508
申请日：2023-03-14
Applicant: QUALCOMM Incorporated
Inventor： Xingyi HUA , David Zixiang YANG , Francesco GATTA
CPC classification number: G06F1/26 , H04M1/725 , H04M2201/02 , H04M2201/04 , H04M2201/06 , H04M2201/14
Abstract: A dual-VIO integrated circuit is configurable into either a first configuration in which a VIO power supply voltage has a first value or into a second configuration in which the VIO power supply voltage has a second value. The dual-VIO integrated circuit includes a smart start-up detection circuit that detects whether the integrated circuit is in the first configuration or the second configuration.
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公开(公告)号：US09961178B2
公开(公告)日：2018-05-01
申请号：US15079724
申请日：2016-03-24
Applicant: Motorola Mobility LLC
Inventor： Seongchul Daniel Hong
CPC classification number: H04M1/673 , G06F3/0412 , G06F3/0421 , G06F21/32 , G06K9/00 , G06K9/00013 , G06K9/0004 , G06K9/00087 , G06K9/22 , H01L27/1222 , H01L27/323 , H04M2201/02 , H04M2201/04
Abstract: Various embodiments provide a handheld computing device, such as a cellular phone, that includes a fingerprint sensor embedded in the device's display active area. The fingerprint sensor is composed of a series of PIN diodes that are configured to operate in a photo-receiving mode. In various embodiments, the PIN diodes are formed as active matrix organic light emitting diodes (AMOLEDs) at least partially within the gap between pixels in the display active area.
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公开(公告)号：US20170279948A1
公开(公告)日：2017-09-28
申请号：US15079724
申请日：2016-03-24
Applicant: Motorola Mobility LLC
Inventor： Seongchul Daniel Hong
CPC classification number: H04M1/673 , G06F3/0412 , G06F3/0421 , G06F21/32 , G06K9/00 , G06K9/00013 , G06K9/0004 , G06K9/00087 , G06K9/22 , H01L27/1222 , H01L27/323 , H04M2201/02 , H04M2201/04
Abstract: Various embodiments provide a handheld computing device, such as a cellular phone, that includes a fingerprint sensor embedded in the device's display active area. The fingerprint sensor is composed of a series of PIN diodes that are configured to operate in a photo-receiving mode. In various embodiments, the PIN diodes are formed as active matrix organic light emitting diodes (AMOLEDs) at least partially within the gap between pixels in the display active area.
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公开(公告)号：US09768319B2
公开(公告)日：2017-09-19
申请号：US15159182
申请日：2016-05-19
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Koichiro Kamata
IPC: H01L29/78 , H01L29/786 , H03C1/36 , G06K19/077 , H01L23/66 , H01L27/06 , H01L49/02
CPC classification number: H01L29/7869 , G06K19/07775 , H01L23/66 , H01L27/0629 , H01L28/20 , H01L28/40 , H01L29/78693 , H01L29/78696 , H01L2223/6677 , H03C1/36 , H04M2201/04 , H04M2201/06
Abstract: A modulation circuit includes a load and a transistor serving as a switch. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. The off-state current of the transistor is 1×10−13 A or less. A modulation circuit includes a load, a transistor serving as a switch, and a diode. The load, the transistor, and the diode are connected in series between the terminals of an antenna. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. An off-state current of the transistor is 1×10−13 A or less. On/off of the transistor is controlled in accordance with a signal inputted to a gate of the transistor. The load is a resistor, a capacitor, or a combination of a resistor and a capacitor.
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