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公开(公告)号：US06663472B2
公开(公告)日：2003-12-16
申请号：US10062656
申请日：2002-02-01
IPC分类号： B24B508
摘要： An improved chemical mechanical polishing apparatus for planarizing semiconductor surface materials. The single rotating polishing platen with an attached pad of conventional CMP processes is replaced with two controlled independently driven, concentric and coplanar, polishing platens. The two co-planar polishing platens allows for separate adjustable options to the CMP polishing process. The options are provided by having pads of different material compositions and hardness. Moreover, an annular space is provided between the platens to introduce the usage of two slurry formulations, one to each pad, on the same CMP tool. The annular space between platens forming a drain path for catching and containing slurry waste.
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公开(公告)号：US06248006B1
公开(公告)日：2001-06-19
申请号：US09490155
申请日：2000-01-24
申请人： Madhusudan Mukhopadhyay , Subramanian Balakumar , Chivukula Subrahmanyam , Yelehanka Ramachandramurthy Pradeep
发明人： Madhusudan Mukhopadhyay , Subramanian Balakumar , Chivukula Subrahmanyam , Yelehanka Ramachandramurthy Pradeep
IPC分类号： B24B508
摘要： A new apparatus is provided that allows for uniform polishing of semiconductor surfaces. The single polishing pad of conventional CMP methods is divided into a split pad, the split pad allows for separate adjustments of CMP control parameters across the surface of the wafer. These adjustments can extend from the center of the wafer to its perimeter (along the radius of the wafer) thereby allowing for the elimination of conventional problems of non-uniformity of polishing between the center of the surface that is polished and the perimeter of the surface that is polished.
摘要翻译： 提供了允许半导体表面的均匀抛光的新设备。 传统CMP方法的单个抛光垫被分成分裂垫，分离垫允许跨晶片表面的CMP控制参数的单独调整。 这些调整可以从晶片的中心延伸到其周边（沿着晶片的半径），从而可以消除抛光表面的中心与表面周边之间的抛光不均匀的常规问题 那是抛光。
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