Surface acoustic wave device
    1.
    发明授权
    Surface acoustic wave device 有权
    表面声波装置

    公开(公告)号:US07075390B1

    公开(公告)日:2006-07-11

    申请号:US10110222

    申请日:2000-10-31

    CPC分类号: H03H9/0259 H03H9/14505

    摘要: The surface acoustic wave device has the surface acoustic wave transducer, which consists of the positive electrode finger 102, the negative electrode finger 204, and the floating electrode 300, which are formed on the surface of the langasite single crystal substrate, where the substrate orientation and the surface acoustic wave propagation direction are chosen so that it may have the natural unidirectional property. When the wavelength of the surface acoustic wave is λ, each above-mentioned electrode is formed along the surface acoustic wave propagation direction, so that the width of above-mentioned positive electrode finger and the negative electrode finger may be about λ/8, the distance g between each center of the positive electrode finger and the floating electrode may be 13/40λ≦g≦14/40λ, and the width W of the floating electrode may be 11/40λ≦W≦13/40λ.

    摘要翻译: 表面声波装置具有形成在阳极硅单晶基板的表面上的由正电极指状物102,负极指状物204和浮动电极300构成的声表面波换能器,其中基板取向 并且选择表面声波传播方向,使得其可以具有自然的单向性质。 当声表面波的波长为λ时,沿声表面波传播方向形成上述每个电极,使得上述正电极指和负电极指的宽度可以约为λ/ 8, 正电极指的每个中心和浮动电极之间的距离g可以是13 /40λλ= 14 /40λ,浮动电极的宽度W可以是11 /40λ= W <= 13 /40λ。