公开(公告)号：US06647047B2

公开(公告)日：2003-11-11

申请号：US10290177

申请日：2002-11-08

申请人： Makoto Yokota

发明人： Makoto Yokota

IPC分类号： H01G319

CPC分类号： H01S5/0281 ,  H01S5/0425

摘要： The present invention relates to a semiconductor laser device having a protective coating with a high-reliability formed on an end surface, and to a method for manufacturing the same. According to the present invention, in forming a semiconductor laser device, an electrode comprising Au is patterned so that the electrode does not exist in the vicinity of a light emitting end surface. Thereby, even when an Si film is formed on the light emitting end surface, the Si film is prevented from contacting with the light emitting end surface. In addition, after patterning the electrode, an insulating film (a silicon nitride film) is formed on the electrode for preventing the Si in the protective coating on the end surface from contacting with Au in the electrode, even when the Si film contacts with a surface of the electrode.