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公开(公告)号：US20180219350A1
公开(公告)日：2018-08-02
申请号：US15938521
申请日：2018-03-28
发明人： Martin MÖHRLE , Michael THEURER , Ariane SIGMUND , Ute TROPPENZ
CPC分类号： H01S5/02268 , G02B6/4224 , H01S5/0224 , H01S5/02256 , H01S5/026 , H01S5/0281 , H01S5/0425 , H01S5/12 , H01S5/125 , H01S5/14 , H01S5/22 , H01S5/34306 , H01S5/40 , H01S5/4025 , H01S5/4031 , H01S5/50
摘要： What is shown is a method for manufacturing a semiconductor light source. The semiconductor light source has a substrate and a layer sequence arranged above the substrate, the same having a light-emitting layer and an upper boundary layer arranged above the light-emitting layer. The layer sequence is patterned in order to form a light-emitting stripe for defining the semiconductor light source and an alignment stripe, extending in parallel thereto, as a horizontal alignment mark at the same time. Then, a cover layer is applied on the patterned layer sequence and a part of the cover layer is removed in order to expose the alignment stripe and expose a region of the layer sequence outside the light-emitting stripe and spaced apart from a light-entrance edge or a light-exit edge of the light-emitting stripe as a vertical alignment mark.
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公开(公告)号：US09312659B2
公开(公告)日：2016-04-12
申请号：US14556195
申请日：2014-11-30
CPC分类号： H01S5/0282 , B82Y20/00 , H01S5/028 , H01S5/0281 , H01S5/06825 , H01S5/3013 , H01S5/323 , H01S5/343 , H01S5/34333
摘要： Provided is a highly reliable nitride semiconductor laser element having a robust end face protection film not being peeled even in laser operation. The nitride semiconductor laser element includes: a semiconductor multi-layer structure including a group III nitride semiconductor and having a light-emitting end face; and a protection film including a dielectric multi-layer film and covering the light-emitting end face of the semiconductor multi-layer structure. The protection film includes an end face protection layer and an oxygen diffusion suppression layer arranged sequentially in stated order from the light-emitting end face. The end face protection layer includes a crystalline film comprising nitride including aluminum. The oxygen diffusion suppression layer has a structure in which a metal oxide film is between silicon oxide films. The metal oxide film is crystallized by laser light.
摘要翻译： 提供了一种高可靠性的氮化物半导体激光元件，其具有即使在激光操作中也不会剥离的坚固的端面保护膜。 氮化物半导体激光元件包括：包含III族氮化物半导体并具有发光端面的半导体多层结构; 以及包含电介质多层膜并覆盖半导体多层结构的发光端面的保护膜。 保护膜包括从发光端面按顺序依次布置的端面保护层和氧扩散抑制层。 端面保护层包括包含铝的氮化物的结晶膜。 氧扩散抑制层具有金属氧化物膜在氧化硅膜之间的结构。 金属氧化物膜通过激光结晶。
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3.发明授权Methods for producing optoelectronic semiconductor components, and optoelectronic semiconductor lasers 有权制造光电半导体元件的方法和光电子半导体激光器公开(公告)号：US08879597B2
公开(公告)日：2014-11-04
申请号：US13653537
申请日：2012-10-17
发明人： Christoph Eichler , Sonke Tautz
CPC分类号： H01S5/34333 , G02B1/11 , H01L33/58 , H01S5/0206 , H01S5/0264 , H01S5/0281 , H01S5/0286 , H01S5/2018 , H01S5/22 , H01S5/32341 , H01S2301/16 , H01S2301/18
摘要： A method for producing an optoelectronic semiconductor component includes: epitaxially growing a semiconductor layer sequence including an active layer on a growth substrate, shaping a front facet at the semiconductor layer sequence and the growth substrate, coating a part of the front facet with a light blocking layer for radiation generated in the finished semiconductor component, wherein the light blocking layer is produced by a directional coating method and the light blocking layer is structured during coating by shading by the growth substrate and/or by at least one dummy bar arranged at and/or alongside the growth substrate.
摘要翻译： 一种光电子半导体元件的制造方法，包括：在生长基板上外延生长包含活性层的半导体层序列，在半导体层顺序成形前面和生长基板，用阻光层涂布前面的一部分 在成品半导体部件中产生的辐射层，其中通过定向涂布法制造遮光层，并且遮光层在被生长衬底和/或至少一个布置在/ 或与生长基质一起。
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公开(公告)号：US08654808B2
公开(公告)日：2014-02-18
申请号：US13194046
申请日：2011-07-29
申请人： Tomonori Morizumi
发明人： Tomonori Morizumi
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , H01S5/0281 , H01S5/0282 , H01S2301/176
摘要： A nitride semiconductor laser element has: a nitride semiconductor layer having cavity planes at the ends of a waveguide region, an insulating film formed on an upper face of the nitride semiconductor layer so that the ends on the cavity plane side are isolated from cavity planes, and a first film formed from the cavity plane to the upper face of the nitride semiconductor layer, and covered part of the insulating film surface, the first film has a first region that is in contact with the nitride semiconductor and a second region that is in contact with the insulating film, and is formed from AlxGa1-xN (0
摘要翻译： 氮化物半导体激光元件具有：在波导区域的端部具有空腔平面的氮化物半导体层，形成在氮化物半导体层的上表面上的绝缘膜，使得空腔平面侧的端部与空腔平面隔离， 以及从所述空腔平面到所述氮化物半导体层的上表面形成的第一膜，以及所述绝缘膜表面的被覆部分，所述第一膜具有与所述氮化物半导体接触的第一区域和位于 与绝缘膜接触，并且由Al x Ga 1-x N（0
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公开(公告)号：US08437376B2
公开(公告)日：2013-05-07
申请号：US13294682
申请日：2011-11-11
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , H01S5/0281 , H01S5/0283
摘要： A nitride semiconductor device includes a multilayer semiconductor structure made of a group III nitride semiconductor and having a light-emitting facet, and a first coating film formed to cover the light-emitting facet of the multilayer semiconductor structure. The first coating film is a crystalline film made of a nitride containing aluminum. The crystalline film is composed of a group of single domains, and the single domain is comprised of a group of grains whose crystal orientation planes have a same inclination angle and a same rotation angle. A length of a boundary between the domains per unit area is 7 μm−1 or less.
摘要翻译： 氮化物半导体器件包括由III族氮化物半导体制成并具有发光小面的多层半导体结构，以及形成为覆盖多层半导体结构的发光面的第一涂膜。 第一涂膜是由含有铝的氮化物制成的结晶膜。 结晶膜由一组单畴构成，单畴由一组晶体构成，晶粒取向面具有相同的倾斜角度和相同的旋转角度。 单位面积域之间的边界长度为7mum-1以下。
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公开(公告)号：US20120076168A1
公开(公告)日：2012-03-29
申请号：US13309120
申请日：2011-12-01
申请人： Yuichiro OKUNUKI
发明人： Yuichiro OKUNUKI
IPC分类号： H01S5/026
CPC分类号： H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/0283 , H01S5/3235
摘要： A semiconductor laser according to the present invention comprises a λ/2 dielectric film (λ: in-medium wavelength of a dielectric film, for example, SiO2, Si3N4, Al2O3, and AlN) in contact with a facet of a resonator; and a first dielectric double layered film disposed on the dielectric film, which includes a first layer of a-Si and a second layer of a material having a refractive index lower than that of a-Si. The first layer has a thickness ¼ of an in-medium wavelength of a-Si, and the second layer has a thickness ¼ of an in-medium wavelength of the second layer. Therefore, it is possible to firmly stack the first dielectric double layered film and form a high reflectance film with high yield.
摘要翻译： 根据本发明的半导体激光器包括与谐振器的小面接触的λ/ 2电介质膜（电介质膜的介质中波长，例如SiO 2，Si 3 N 4，Al 2 O 3和AlN） 以及设置在电介质膜上的第一介电双层膜，其包括第一层a-Si和第二层折射率低于a-Si的材料。 第一层具有a-Si的介质内波长的厚度¼，第二层具有第二层的介质内波长的厚度¼。 因此，可以将第一电介质双层膜牢固堆叠并以高产率形成高反射率膜。
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7.发明申请公开(公告)号：US20110007770A1
公开(公告)日：2011-01-13
申请号：US12923334
申请日：2010-09-15
IPC分类号： H01S5/323
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0021 , H01S5/0281 , H01S5/0282 , H01S5/2231 , H01S5/34333
摘要： An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.
摘要翻译： 在具有氮化物III-V族化合物半导体层的氮化物半导体激光棒的光谐振器的面上放置六方晶的粘附层，并且在该粘合层上铺设小面涂层。 以这种方式，获得其中将小面涂层铺设在粘合层上的结构。
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公开(公告)号：US20100246623A1
公开(公告)日：2010-09-30
申请号：US12572323
申请日：2009-10-02
申请人： Yuichiro Okunuki
发明人： Yuichiro Okunuki
CPC分类号： H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/0283 , H01S5/3235
摘要： A semiconductor laser according to the present invention comprises a λ/2 dielectric film (λ: in-medium wavelength of a dielectric film, for example, SiO2, Si3N4, Al2O3, and AlN) in contact with an facet of a resonator; and a first dielectric double layered film disposed on the dielectric film, which includes a first layer of a-Si and a second layer of a material having a refractive index lower than that of a-Si. The first layer has a thickness ¼ of a in-medium wavelength of a-Si, and the second layer has a thickness ¼ of a in-medium wavelength of the second layer. Therefore, it is possible to firmly stack the first dielectric double layered film and form a high reflectance film with high yield.
摘要翻译： 根据本发明的半导体激光器包括与谐振器的面相接触的λ/ 2电介质膜（λ：介电膜的介质中波长，例如SiO 2，Si 3 N 4，Al 2 O 3和AlN） 以及设置在电介质膜上的第一介电双层膜，其包括第一层a-Si和第二层折射率低于a-Si的材料。 第一层具有a-Si的介质内波长的厚度¼，第二层具有第二层的介质内波长的厚度¼。 因此，可以将第一电介质双层膜牢固堆叠并以高产率形成高反射率膜。
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公开(公告)号：US20080108162A1
公开(公告)日：2008-05-08
申请号：US11969735
申请日：2008-01-04
IPC分类号： H01L33/00
CPC分类号： C30B29/403 , B82Y20/00 , C30B7/005 , C30B7/10 , C30B9/00 , C30B29/406 , H01S5/021 , H01S5/0213 , H01S5/0218 , H01S5/0281 , H01S5/164 , H01S5/22 , H01S5/3202 , H01S5/32341 , H01S5/34333 , H01S2304/12
摘要： The object of this invention is to provide a high-output type nitride light emitting device. The nitride light emitting device comprises an n-type nitride semiconductor layer or layers, a p-type nitride semiconductor layer or layers and an active layer therebetween, wherein a gallium-containing nitride substrate is obtained from a gallium-containing nitride bulk single crystal, provided with an epitaxial growth face with dislocation density of 105/cm2 or less, and A-plane or M-plane which is parallel to C-axis of hexagonal structure for an epitaxial face, wherein the n-type semiconductor layer or layers are formed directly on the A-plane or M-plane. In case that the active layer comprises a nitride semiconductor containing In, an end face film of single crystal AlxGa1-xN (0≦x≦1) can be formed at a low temperature not causing damage to the active layer.
摘要翻译： 本发明的目的是提供一种高输出型氮化物发光器件。 氮化物发光器件包括n型氮化物半导体层或p型氮化物半导体层或其间的有源层，其中含镓氮化物衬底由含镓氮化物本体单晶获得， 具有位错密度为10 5 / cm 2以下的外延生长面，平行于六方结构的C轴的A面或M面 对于外延面，其中n型半导体层直接形成在A平面或M平面上。 在有源层包括含有In的氮化物半导体的情况下，单晶Al x Ga 1-x N（0 <= x <= 1）的端面膜， 可以在不会对活性层造成损害的低温下形成。
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公开(公告)号：US07057211B2
公开(公告)日：2006-06-06
申请号：US10493746
申请日：2002-10-28
IPC分类号： H01L21/00
CPC分类号： C30B29/403 , B82Y20/00 , C30B7/005 , C30B7/10 , C30B9/00 , C30B29/406 , H01S5/021 , H01S5/0213 , H01S5/0218 , H01S5/0281 , H01S5/164 , H01S5/22 , H01S5/3202 , H01S5/32341 , H01S5/34333 , H01S2304/12
摘要： The object of this invention is to provide a high-output type nitride semiconductor laser device comprising a pair of end faces of a resonator.The nitride semiconductor laser device comprises an n-type nitride semiconductor layer or layers, a p-type nitride semiconductor layer or layers and a resonator, provided with an active layer comprising nitride semiconductor containing In therebetween, wherein at least light emitting end face of the resonator is covered with an end face film of single crystal AlxGa1-xN (0≦x≦1) formed at a low temperature not causing damage to the active layer comprising nitride semiconductor containing In.
摘要翻译： 本发明的目的是提供一种包括谐振器的一对端面的高输出型氮化物半导体激光器件。 氮化物半导体激光器件包括n型氮化物半导体层或p型氮化物半导体层或谐振器，其具有包含其中的In的氮化物半导体的有源层，其中至少发光端面 谐振器被覆在低温下形成的单晶Al x Ga 1-x N（0 <= x <= 1）的端面膜，不会损坏 所述有源层包含含有In的氮化物半导体。
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