公开(公告)号：US06995045B2

公开(公告)日：2006-02-07

申请号：US10378948

申请日：2003-03-05

申请人： Hung-Jen Chu ,  Nei-Jen Hsiao ,  Hui-Chung Shen ,  Meng-Chi Liou

发明人： Hung-Jen Chu ,  Nei-Jen Hsiao ,  Hui-Chung Shen ,  Meng-Chi Liou

IPC分类号： H01L21/355

CPC分类号： H01L29/66742 ,  H01L29/66765

摘要： The thin film transistor has a non-transparent structure besides and insulated with the gate. Hence, the light transmitted from the substrate is blocked and the light current induced in the thin film transistor is negligible. The method uses a mask with a slit pattern to form a non-uniform photoresist. Hence, the mask could be used to pattern two conductor layers for forming source/drain/channel.