公开(公告)号：US07112866B2

公开(公告)日：2006-09-26

申请号：US10796893

申请日：2004-03-09

申请人： Lap Chan ,  Cher Liang Cha ,  Kheng Chok Tee

发明人： Lap Chan ,  Cher Liang Cha ,  Kheng Chok Tee

IPC分类号： H01L29/00 ,  H01L23/48 ,  H01L21/331 ,  H01L21/4765

CPC分类号： H01L21/7682 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention provides a new multilevel interconnect structure of air gaps in a layer of IMD. A first layer of dielectric is provided over a surface; the surface contains metal points of contact. Trenches are provided in this first layer of dielectric. The trenches are filled with a first layer of nitride or disposable solid and polished. A second layer of dielectric is deposited over the first layer of dielectric. Trenches are formed in the second layer of dielectric, a second layer of nitride or disposable solid is deposited over the second layer of dielectric. The layer of nitride or disposable solid is polished. A thin layer of oxide is deposited over the surface of the second layer of dielectric. The thin layer of oxide is masked and etched thereby creating openings in this thin layer of oxide, these openings align with the points of intersect of the trenches in the first layer of dielectric and in the second layer of dielectric. The nitride or removable solid is removed from the trenches. The openings in the thin layer of oxide are closed off leaving a network of trenches that are filled with air in the two layers of dielectric that now function as the Inter Level Dielectric.

摘要翻译： 本发明提供了在IMD层中的空气间隙的新的多层互连结构。 在表面上提供第一层电介质; 表面含有金属接触点。 在第一层电介质中设置沟槽。 沟槽填充有第一层氮化物或一次性固体并抛光。 第二层介质沉积在第一层电介质上。 沟槽形成在第二层电介质中，第二层氮化物或一次性固体沉积在第二层电介质上。 抛光氮化物或一次性固体层。 在第二电介质层的表面上沉积薄层的氧化物。 氧化物的薄层被掩蔽和蚀刻，从而在该薄层氧化物中形成开口，这些开口与第一介电层和第二介质层中的沟槽的交叉点对准。 氮化物或可移除的固体从沟槽中去除。 氧化物薄层中的开口被封闭，留下在两层电介质中充满空气的沟槽网络，现在这两层电介质用作Inter Level Dielectric。