公开(公告)号：US06586283B2

公开(公告)日：2003-07-01

申请号：US09539490

申请日：2000-03-30

申请人： John J. Corcoran ,  Travis N. Blalock ,  Paul J. Vande Voorde ,  Thomas A. Knotts ,  Neela B. Gaddis

发明人： John J. Corcoran ,  Travis N. Blalock ,  Paul J. Vande Voorde ,  Thomas A. Knotts ,  Neela B. Gaddis

IPC分类号： H01L31332

CPC分类号： H01L27/10897

摘要： An apparatus and a method for protecting charge storage elements from photo-induced currents in silicon integrated circuits are provided. In order to protect against photo-induced currents that are generated outside the storage node circuits themselves, an n-well guard ring is placed as closely as possible to the transistors and other elements in the storage node circuits. As a result there is a minimum of exposed silicon area in which light can produce current in areas next to the storage node circuits, and the n-well guard ring captures photo-induced currents that are generated outside the storage node circuits. In order to protect against the photo-induced currents that are generated inside the storage node circuits, an aluminum interconnect layer is placed on top of the storage node circuit, separated by an insulating layer of silicon dioxide. This creates a shield against the light and protects the storage node circuit by reflecting light away.

摘要翻译： 提供了一种用于在硅集成电路中保护电荷存储元件免受光电流的装置和方法。 为了防止在存储节点电路本身之外产生的光感应电流，n阱保护环尽可能靠近晶体管和存储节点电路中的其他元件放置。 因此，在存储节点电路旁边的区域中存在光可以产生电流的暴露的硅区域的最小值，并且n阱保护环捕获在存储节点电路外部产生的光感应电流。 为了防止在存储节点电路内产生的光感应电流，铝互连层被放置在存储节点电路的顶部，由二氧化硅的绝缘层分开。 这产生了防护光，并通过反射光来保护存储节点电路。