公开(公告)号：US06936535B2

公开(公告)日：2005-08-30

申请号：US10007304

申请日：2001-12-05

申请人： Ki-Bum Kim ,  Pekka J. Soininen ,  Ivo Raaijmakers

发明人： Ki-Bum Kim ,  Pekka J. Soininen ,  Ivo Raaijmakers

IPC分类号： C23C16/20 ,  C23C16/34 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532 ,  H01L21/44 ,  H01L5/12

CPC分类号： H01L21/76846 ,  H01L21/28562 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76858 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a method of fabricating a semiconductor device, which could advance the commercialization of semiconductor devices with a copper interconnect. In a process of metal interconnect line fabrication, a TiN thin film combined with an Al intermediate layer is used as a diffusion barrier on trench or via walls. For the formation, Al is deposited on the TiN thin film followed by copper filling the trench. Al diffuses to TiN layer and reacts with oxygen or nitrogen, which will stuff grain boundaries efficiently, thereby blocking the diffusion of copper successfully.

摘要翻译： 本发明提供一种制造半导体器件的方法，其可以通过铜互连促进半导体器件的商业化。 在金属互连线制造的过程中，与Al中间层结合的TiN薄膜用作沟槽或通孔壁上的扩散阻挡层。 为了形成，Al沉积在TiN薄膜上，随后铜填充沟槽。 Al扩散到TiN层并与氧或氮反应，这将有效地吸收晶界，从而阻止铜的扩散。