公开(公告)号：US07538597B2

公开(公告)日：2009-05-26

申请号：US11838051

申请日：2007-08-13

申请人： David Kwok Kuen Kwong ,  Ho Ming Karen Wan ,  Kam Chuen Wan ,  Chik Wai Ng

发明人： David Kwok Kuen Kwong ,  Ho Ming Karen Wan ,  Kam Chuen Wan ,  Chik Wai Ng

IPC分类号： H03H37/76

CPC分类号： G11C17/16 ,  Y02P80/30

摘要： The fuse cell architecture 371 for the presently claimed invention employs a multiple fuse structure 301, 302 architecture in lieu of a single fuse structure. As such, the terminals of these fuse structures that couple to other on-chip devices are always at ground potential throughout the application of programming voltage to the fuse pads 311. This approach overcomes previous single fuse problems owing to the fact that a sufficiently high programming voltage can be applied to blow fuse structures with unexpectedly high resistance without damaging nearby on-chip devices. Furthermore, even if one of the fuse structures 301, 302 possessed an abnormally high resistance which would not be blown under typical conditions, the desired circuit trimming result can still be achieved owing to the blowing of the other fuse structure in the fuse cell 371.

摘要翻译： 用于当前要求保护的发明的熔丝单元结构371采用多个熔丝结构301,302代替单个熔丝结构。 因此，耦合到其它片上器件的这些熔丝结构的端子在编程电压施加到熔丝焊盘311时始终处于地电位。由于以下事实，该方法克服了先前的单熔丝问题，这是因为足够高的编程 可以施加电压来熔断具有意想不到的高电阻的熔丝结构，而不会损坏附近的片上器件。 此外，即使保险丝结构301,302中的一个具有在典型条件下不会被烧断的异常高电阻，由于熔丝单元371中的另一熔丝结构的吹动，仍然可以实现期望的电路修整结果。