公开(公告)号：US07144773B1

公开(公告)日：2006-12-05

申请号：US11141902

申请日：2005-06-01

申请人： Shih-Chang Liu ,  Chi-Hsin Lo ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsai

发明人： Shih-Chang Liu ,  Chi-Hsin Lo ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsai

IPC分类号： H04L21/336 ,  H04L21/8242 ,  H04L29/788 ,  H04L29/76

CPC分类号： H01L21/76224 ,  H01L21/823481 ,  H01L27/115 ,  H01L27/11521

摘要： A method for forming a split gate flash device is provided. In one embodiment, a semiconductor substrate with a dielectric layer formed thereover is provided. A conductor layer is formed overlying the dielectric layer. A masking layer is deposited overlying the conductor layer. A light sensitive layer is formed overlying the masking layer. The light sensitive layer is patterned and etched to form a pattern of openings therein. The masking layer and the conductor layer are etched according to the pattern of openings in the light sensitive layer. The conductor layer is etched at the outer surface area between the conductor layer and the dielectric layer to form undercuts. The dielectric layer is etched to form a notch profile at the outer surface area between the conductor layer and the dielectric layer and portions of the substrate are etched to form a plurality of trenches. An isolation layer is filled over the plurality of trenches and the masking layer. The masking layer and portions of the conductor layer and isolation layer are etched away, wherein a portion of the isolation layer is preserved in the notch profile.

摘要翻译： 提供了一种用于形成分离栅极闪光装置的方法。 在一个实施例中，提供了其上形成介电层的半导体衬底。 形成覆盖在电介质层上的导体层。 掩蔽层沉积在导体层上。 形成覆盖掩模层的光敏层。 对感光层进行图案化和蚀刻以在其中形成开口图案。 掩模层和导体层根据光敏层中的开口图案进行蚀刻。 在导体层和电介质层之间的外表面区域处蚀刻导体层以形成底切。 蚀刻电介质层以在导体层和电介质层之间的外表面区域形成切口轮廓，并且蚀刻衬底的部分以形成多个沟槽。 隔离层填充在多个沟槽和掩蔽层上。 掩模层和导体层和隔离层的部分被蚀刻掉，其中隔离层的一部分保留在凹口轮廓中。