公开(公告)号：WO2022106157A1

公开(公告)日：2022-05-27

申请号：PCT/EP2021/079524

申请日：2021-10-25

Applicant: ASML NETHERLANDS B.V.

Inventor： PARAYIL VENUGOPALAN, Syam ,  KURGANOVA, Evgenia ,  FARAMARZI, Vina

IPC: C23C16/04 ,  C23C16/48 ,  G03F7/004 ,  G03F7/16 ,  H01L21/02 ,  H01L21/027 ,  H01L29/739

Abstract: Methods of forming a patterned layer of material are disclosed. In one arrangement, a substrate having a layered structure is provided. The layered structure comprises a base layer, a support layer, and a thermally insulating layer between the base layer and the support layer. The support layer comprises a plurality of sub-units that are thermally insulated from each other. A selected portion of the support layer is selectively irradiated during a pattern-forming process. The irradiation locally drives the pattern-forming process to form a layer of material in a pattern defined by the selected portion.

公开(公告)号：WO2022043408A1

公开(公告)日：2022-03-03

申请号：PCT/EP2021/073552

申请日：2021-08-26

Applicant: ASML NETHERLANDS B.V.

Inventor： PARAYIL VENUGOPALAN, Syam ,  KAMALI, Mohammad, Reza ,  KUBIS, Michael

IPC: G06F30/398 ,  H01L21/027 ,  H01J37/32

Abstract: Systems and methods for simulating a plasma etch process are disclosed. According to certain embodiments, a method for simulating a plasma etch process may include predicting a first characteristic of a particle of a plasma in a first scale based on a first plurality of parameters; predicting a second characteristic of the particle in a second scale based on a modification of the first characteristic caused by a second plurality of parameters; and simulating an etch characteristic of a feature based on the first and the second characteristics of the particle. A multi-scale physical etch model or a multi-scale data driven model may be used to simulate the plasma etch process.