公开(公告)号：WO2021262529A1

公开(公告)日：2021-12-30

申请号：PCT/US2021/037924

申请日：2021-06-17

Applicant: LAM RESEARCH CORPORATION

Inventor： PETER, Daniel ,  YU, Jengyi ,  TAN, Samantha Siamhwa ,  XUE, Meng ,  LI, Da ,  DAWSON, Keith Edward ,  THOMAS, Clint Edward ,  PACHO, John Danny Baterina

IPC: H01L21/67 ,  H01L21/687 ,  H01J37/32 ,  G03F7/16 ,  G03F7/20 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/168 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32862 ,  H01J37/32889

Abstract: Dry backside and bevel edge clean is performed without exposure to plasma to remove unwanted photoresist material from a substrate. The substrate is supported on a substrate support and elevated by minimum contact area (MCA) supports so that etch gas can access a backside of the substrate. A gas distributor delivers curtain gas to a frontside of the substrate to protect photoresist material on the frontside. An etch gas delivery source delivers a first etch gas flow to the backside, and one or more peripheral gas inlets deliver a second etch gas flow to a periphery of the frontside and around the bevel edge. A radiative heat source is positioned below the substrate to heat the substrate.