公开(公告)号：WO2022005855A1

公开(公告)日：2022-01-06

申请号：PCT/US2021/038758

申请日：2021-06-23

Applicant: APPLIED MATERIALS, INC.

Inventor： DAI, Yuqiong ,  SACHAN, Madhur ,  FREED, Regina ,  HWANG, Hoyung, David

IPC: G03F7/36 ,  G03F7/004 ,  G03F7/20 ,  C23C16/06 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/0047 ,  G03F7/162 ,  G03F7/40

Abstract: Embodiments disclosed herein include a method of developing a metal oxo photoresist with a non-wet process. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a chamber. In an embodiment, the metal oxo photoresist comprises exposed regions and unexposed regions, and the unexposed regions comprise a higher carbon concentration than the exposed regions. In an embodiment, the method further comprises flowing a gas into the chamber, wherein the gas reacts with the unexposed regions to produce a volatile byproduct.

公开(公告)号：WO2021262529A1

公开(公告)日：2021-12-30

申请号：PCT/US2021/037924

申请日：2021-06-17

Applicant: LAM RESEARCH CORPORATION

Inventor： PETER, Daniel ,  YU, Jengyi ,  TAN, Samantha Siamhwa ,  XUE, Meng ,  LI, Da ,  DAWSON, Keith Edward ,  THOMAS, Clint Edward ,  PACHO, John Danny Baterina

IPC: H01L21/67 ,  H01L21/687 ,  H01J37/32 ,  G03F7/16 ,  G03F7/20 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/168 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32862 ,  H01J37/32889

Abstract: Dry backside and bevel edge clean is performed without exposure to plasma to remove unwanted photoresist material from a substrate. The substrate is supported on a substrate support and elevated by minimum contact area (MCA) supports so that etch gas can access a backside of the substrate. A gas distributor delivers curtain gas to a frontside of the substrate to protect photoresist material on the frontside. An etch gas delivery source delivers a first etch gas flow to the backside, and one or more peripheral gas inlets deliver a second etch gas flow to a periphery of the frontside and around the bevel edge. A radiative heat source is positioned below the substrate to heat the substrate.

公开(公告)号：WO2021198482A1

公开(公告)日：2021-10-07

申请号：PCT/EP2021/058748

申请日：2021-04-01

Applicant: TECHNOLOGICAL UNIVERSITY DUBLIN

Inventor： MIKULCHYK, Tatsiana ,  CODY, Dervil ,  NAYDENOVA, Izabela ,  OUBAHA, Mohamed ,  GUL, Sabad-e- ,  MARTIN, Suzanne

IPC: G03F7/16 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/029 ,  G03F7/031 ,  G03F7/0755 ,  G03F7/0757

Abstract: A composition for holographic applications, a process for making the composition and applications thereof. The process comprises gelation of a colloidal sol to yield a gel, wherein a cross-linker (e.g. an amine) and a photoinitiator are combined with the colloidal sol before or during gelation. The colloidal sol comprises a hydrolysed mixture of water; an organosilane; and an organometallic complex, the organometallic complex comprising a metal chelated by one or more ligands. The process may additionally comprise drying the colloidal sol or gel to form a xerogel.

公开(公告)号：WO2022005877A8

公开(公告)日：2022-01-06

申请号：PCT/US2021/038978

申请日：2021-06-24

Applicant: APPLIED MATERIALS, INC.

Inventor： KALUTARAGE, Lakmal, Charidu ,  DANGERFIELD, Aaron ,  SALY, Mark, Joseph ,  THOMPSON, David, Michael ,  SINGHA ROY, Susmit ,  FREED, Regina

IPC: G03F7/16 ,  G03F7/004 ,  C23C16/455 ,  C23C16/30 ,  C23C16/40 ,  C23C16/45536 ,  C23C16/45538 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/167 ,  G03F7/168

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method for forming a photoresist layer over a substrate in a vacuum chamber comprises providing a metal precursor vapor into the vacuum chamber. In an embodiment, the method further comprises providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of the photoresist layer on a surface of the substrate. In an embodiment, the photoresist layer is a metal oxo containing material.

公开(公告)号：WO2022005877A1

公开(公告)日：2022-01-06

申请号：PCT/US2021/038978

申请日：2021-06-24

Applicant: APPLIED MATERIALS, INC.

Inventor： KALUTARAGE, Lakmal, Charidu ,  DANGERFIELD, Aaron ,  SALY, Mark, Joseph ,  THOMPSON, David, Michael ,  SINGHA, Roy, Susmit ,  FREED, Regina

IPC: G03F7/16 ,  G03F7/004 ,  C23C16/455 ,  C23C16/30 ,  C23C16/40 ,  C23C16/45536 ,  C23C16/45538 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/167 ,  G03F7/168

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method for forming a photoresist layer over a substrate in a vacuum chamber comprises providing a metal precursor vapor into the vacuum chamber. In an embodiment, the method further comprises providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of the photoresist layer on a surface of the substrate. In an embodiment, the photoresist layer is a metal oxo containing material.