公开(公告)号：WO2022005716A1

公开(公告)日：2022-01-06

申请号：PCT/US2021/036547

申请日：2021-06-09

Applicant: APPLIED MATERIALS, INC.

Inventor： GAO, Larry ,  FUNG, Nancy

IPC: H01L21/033 ,  H01L21/311 ,  C23C16/042 ,  C23C16/26 ,  C23C16/56 ,  G03F7/0042 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/26 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0273 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831

Abstract: Embodiments disclosed within include a method for etching a hardmask layer includes forming a photoresist layer comprising an organometallic material on a hardmask layer comprising a metal-containing material, exposing the photoresist layer to ultraviolet radiation through a mask having a selected pattern, removing unirradiated areas of the photoresist layer to pattern the photoresist layer, forming a passivation layer comprising a carbon-containing material selectively on a top surface of the patterned photoresist layer, including selectively depositing passivation material over a top surface of a patterned photoresist layer trimming undesired portions of the passivation material, and etching the hardmask layer exposed by the patterned photoresist layer having the passivation layer formed thereon.

公开(公告)号：WO2023081442A1

公开(公告)日：2023-05-11

申请号：PCT/US2022/049094

申请日：2022-11-07

Applicant: INPRIA CORPORATION

Inventor： JIANG, Kai ,  TELECKY, Alan J. ,  MEYERS, Stephen T.

IPC: C07F7/22 ,  G03F7/004 ,  G03F7/0042 ,  G03F7/0048

Abstract: An organotin precursor solution is described comprising an organic solvent, an optional additive, and an organotin composition represented by one or more organotin compounds represented by the formula RSnL3, wherein each R is independently a hydrocarbyl ligand having from 1 to 31 carbon atoms and each L is independently a hydrolysable ligand, wherein the total concentration of Sn is from about 0.001M to about 0.5 M/ The solvent can comprises a linear alcohol with from 1 to 6 carbon atoms, and the organotin precursor solution can have an initial water content from about 100 ppm to about 10,000 ppm, in which the organotin precursor solution has a reduced rate of water dissipation relative to an equivalent organotin precursor solution formed with 4-methyl-2-pentanol. The organo precursor solutions can be prepared through the selection of an appropriate stabilizing compound, which can be a linear, short chain alcohol and an appropriate additive.

公开(公告)号：WO2021262529A1

公开(公告)日：2021-12-30

申请号：PCT/US2021/037924

申请日：2021-06-17

Applicant: LAM RESEARCH CORPORATION

Inventor： PETER, Daniel ,  YU, Jengyi ,  TAN, Samantha Siamhwa ,  XUE, Meng ,  LI, Da ,  DAWSON, Keith Edward ,  THOMAS, Clint Edward ,  PACHO, John Danny Baterina

IPC: H01L21/67 ,  H01L21/687 ,  H01J37/32 ,  G03F7/16 ,  G03F7/20 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/168 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32862 ,  H01J37/32889

Abstract: Dry backside and bevel edge clean is performed without exposure to plasma to remove unwanted photoresist material from a substrate. The substrate is supported on a substrate support and elevated by minimum contact area (MCA) supports so that etch gas can access a backside of the substrate. A gas distributor delivers curtain gas to a frontside of the substrate to protect photoresist material on the frontside. An etch gas delivery source delivers a first etch gas flow to the backside, and one or more peripheral gas inlets deliver a second etch gas flow to a periphery of the frontside and around the bevel edge. A radiative heat source is positioned below the substrate to heat the substrate.

公开(公告)号：WO2021198482A1

公开(公告)日：2021-10-07

申请号：PCT/EP2021/058748

申请日：2021-04-01

Applicant: TECHNOLOGICAL UNIVERSITY DUBLIN

Inventor： MIKULCHYK, Tatsiana ,  CODY, Dervil ,  NAYDENOVA, Izabela ,  OUBAHA, Mohamed ,  GUL, Sabad-e- ,  MARTIN, Suzanne

IPC: G03F7/16 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/029 ,  G03F7/031 ,  G03F7/0755 ,  G03F7/0757

Abstract: A composition for holographic applications, a process for making the composition and applications thereof. The process comprises gelation of a colloidal sol to yield a gel, wherein a cross-linker (e.g. an amine) and a photoinitiator are combined with the colloidal sol before or during gelation. The colloidal sol comprises a hydrolysed mixture of water; an organosilane; and an organometallic complex, the organometallic complex comprising a metal chelated by one or more ligands. The process may additionally comprise drying the colloidal sol or gel to form a xerogel.

公开(公告)号：WO2022010809A1

公开(公告)日：2022-01-13

申请号：PCT/US2021/040381

申请日：2021-07-02

Applicant: LAM RESEARCH CORPORATION

Inventor： YU, Jengyi ,  TAN, Samantha S.H. ,  ALVI, Mohammed Haroon ,  WISE, Richard ,  PAN, Yang ,  GOTTSCHO, Richard A. ,  LAVOIE, Adrien ,  KANAKASABAPATHY, Sivananda Krishnan ,  WEIDMAN, Timothy William ,  LIN, Qinghuang ,  HUBACEK, Jerome

IPC: G03F7/16 ,  G03F7/38 ,  G03F7/36 ,  G03F7/004 ,  G03F7/20 ,  G03F7/11 ,  H01L21/67 ,  C23C16/00 ,  G03F7/0042 ,  G03F7/167 ,  G03F7/168 ,  H01L21/67167 ,  H01L21/67207

Abstract: Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

公开(公告)号：WO2022005855A1

公开(公告)日：2022-01-06

申请号：PCT/US2021/038758

申请日：2021-06-23

Applicant: APPLIED MATERIALS, INC.

Inventor： DAI, Yuqiong ,  SACHAN, Madhur ,  FREED, Regina ,  HWANG, Hoyung, David

IPC: G03F7/36 ,  G03F7/004 ,  G03F7/20 ,  C23C16/06 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/0047 ,  G03F7/162 ,  G03F7/40

Abstract: Embodiments disclosed herein include a method of developing a metal oxo photoresist with a non-wet process. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a chamber. In an embodiment, the metal oxo photoresist comprises exposed regions and unexposed regions, and the unexposed regions comprise a higher carbon concentration than the exposed regions. In an embodiment, the method further comprises flowing a gas into the chamber, wherein the gas reacts with the unexposed regions to produce a volatile byproduct.

公开(公告)号：WO2022005877A8

公开(公告)日：2022-01-06

申请号：PCT/US2021/038978

申请日：2021-06-24

Applicant: APPLIED MATERIALS, INC.

Inventor： KALUTARAGE, Lakmal, Charidu ,  DANGERFIELD, Aaron ,  SALY, Mark, Joseph ,  THOMPSON, David, Michael ,  SINGHA ROY, Susmit ,  FREED, Regina

IPC: G03F7/16 ,  G03F7/004 ,  C23C16/455 ,  C23C16/30 ,  C23C16/40 ,  C23C16/45536 ,  C23C16/45538 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/167 ,  G03F7/168

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method for forming a photoresist layer over a substrate in a vacuum chamber comprises providing a metal precursor vapor into the vacuum chamber. In an embodiment, the method further comprises providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of the photoresist layer on a surface of the substrate. In an embodiment, the photoresist layer is a metal oxo containing material.

公开(公告)号：WO2022005877A1

公开(公告)日：2022-01-06

申请号：PCT/US2021/038978

申请日：2021-06-24

Applicant: APPLIED MATERIALS, INC.

Inventor： KALUTARAGE, Lakmal, Charidu ,  DANGERFIELD, Aaron ,  SALY, Mark, Joseph ,  THOMPSON, David, Michael ,  SINGHA, Roy, Susmit ,  FREED, Regina

IPC: G03F7/16 ,  G03F7/004 ,  C23C16/455 ,  C23C16/30 ,  C23C16/40 ,  C23C16/45536 ,  C23C16/45538 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/167 ,  G03F7/168

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method for forming a photoresist layer over a substrate in a vacuum chamber comprises providing a metal precursor vapor into the vacuum chamber. In an embodiment, the method further comprises providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of the photoresist layer on a surface of the substrate. In an embodiment, the photoresist layer is a metal oxo containing material.

公开(公告)号：WO2021262371A1

公开(公告)日：2021-12-30

申请号：PCT/US2021/034019

申请日：2021-05-25

Applicant: LAM RESEARCH CORPORATION

Inventor： YU, Jengyi ,  LI, Da ,  LEE, Younghee ,  TAN, Samantha SiamHwa ,  JENSEN, Alan J. ,  XUE, Jun ,  MANUMPIL, Mary Anne

IPC: H01L21/033 ,  G03F7/11 ,  H01L21/67 ,  H01J37/32 ,  G03F7/0042 ,  G03F7/094 ,  G03F7/16 ,  G03F7/167 ,  H01L21/67207 ,  H01L21/68 ,  H01L29/66227

Abstract: Techniques described herein relate to methods, apparatus, and systems for promoting adhesion between a substrate and a metal-containing photoresist. For instance, the method may include receiving the substrate in a reaction chamber, the substrate having a first material exposed on its surface, the first material including a silicon-based material and/or a carbon-based material; generating a plasma from a plasma generation gas source that is substantially free of silicon, where the plasma includes chemical functional groups; exposing the substrate to the plasma to modify the surface of the substrate by forming bonds between the first material and chemical functional groups from the plasma; and depositing the metal-containing photoresist on the modified surface of the substrate, where the bonds between the first material and the chemical functional groups promote adhesion between the substrate and the metal-containing photoresist.