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    LED DEVICE AND METHOD OF MANUFACTURING AN LED DEVICE
    2.
    发明申请
    LED DEVICE AND METHOD OF MANUFACTURING AN LED DEVICE 审中-公开

    公开(公告)号：WO2022029434A1

    公开(公告)日：2022-02-10

    申请号：PCT/GB2021/052020

    申请日：2021-08-04

    Applicant: PORO TECHNOLOGIES LTD

    Inventor： ZHU, Tongtong ,  LIU, Yingjun ,  ALI, Muhammad

    IPC: H01L33/16 ,  H01L33/00 ,  H01L33/32 ,  H01L33/007

    Abstract: A light emitting diode (LED) comprises: an n-doped portion; a p-doped portion; and a light emitting region located between the n-doped portion and the p-doped portion. The light emitting region comprises: a light-emitting layer which emits light at a peak wavelength between 400 and 599 nm under electrical bias thereacross; a Ill-nitride layer located on the light-emitting layer; and a III-nitride barrier layer located on the Ill-nitride layer. The light emitting diode comprises a porous region of III-nitride material. An LED array and a method of manufacturing an LED with a peak emission wavelength between 400 nm and 599 nm under electrical bias are also provided.

    LED DEVICE AND METHOD OF MANUFACTURING AN LED DEVICE
    3.
    发明申请
    LED DEVICE AND METHOD OF MANUFACTURING AN LED DEVICE 审中-公开

    公开(公告)号：WO2022029433A1

    公开(公告)日：2022-02-10

    申请号：PCT/GB2021/052019

    申请日：2021-08-04

    Applicant: PORO TECHNOLOGIES LTD

    Inventor： LIU, Yingjun ,  ZHU, Tongtong ,  ALI, Muhammad

    IPC: H01L33/16 ,  H01L33/32 ,  H01L33/00 ,  H01L27/15

    Abstract: A method of manufacturing an LED device comprises the steps of: providing a template comprising a first porous region of III-nitride material; forming a first LED structure on the template above the first porous region; and forming a second LED structure on the template, in which the second LED structure is not positioned above the first porous region. An LED device comprises a first LED structure, over a first porous region of III-nitride material; and a second LED structure which is not positioned over the first porous region. A three colour LED device is also provided.

    RED LED AND METHOD OF MANUFACTURE
    4.
    发明申请
    RED LED AND METHOD OF MANUFACTURE 审中-公开

    公开(公告)号：WO2021148808A1

    公开(公告)日：2021-07-29

    申请号：PCT/GB2021/050152

    申请日：2021-01-22

    Applicant: PORO TECHNOLOGIES LTD

    Inventor： ALI, Muhammad ,  LIU, Yingjun ,  ZHU, Tongtong

    IPC: H01L33/16 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32

    Abstract: A red-light emitting diode (LED) comprises: an n-doped portion; a p-doped portion; and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region comprises: a light-emitting indium gallium nitride layer which emits light at a peak wavelength between 600 and 750 nm under electrical bias thereacross; a Ill-nitride layer located on the light-emitting indium gallium nitride layer; and a III-nitride barrier layer located on the Ill-nitride layer, and the light emitting diode comprises a porous region of III-nitride material. A red mini LED, a red micro-LED, an array of micro-LEDs, and a method of manufacturing a red LED are also provided.

    METHOD OF FORMING POROUS III-NITRIDE MATERIAL
    7.
    发明申请
    METHOD OF FORMING POROUS III-NITRIDE MATERIAL 审中-公开

    公开(公告)号：WO2023026059A1

    公开(公告)日：2023-03-02

    申请号：PCT/GB2022/052202

    申请日：2022-08-26

    Applicant: PORO TECHNOLOGIES LTD

    Inventor： LIU, Yingjun ,  ZHU, Tongtong

    IPC: H01L21/306

    Abstract: A method for forming porous Ill-nitride material comprises the steps of exposing a Ill-nitride material to a gas, coupling the Ill-nitride material to one terminal of a power supply, and coupling an electrode to another terminal of the power supply, and via the gas forming a circuit. The method comprises the step of energising the circuit to etch a plurality of pores in the Ill-nitride material and thereby form a porous Ill-nitride material. Pores are preferably formed in Ill-nitride material having a charge carrier density of greater than 1 x 1017 cm3. A semiconductor structure, a template for semiconductor overgrowth, and a semiconductor device comprising porous Ill-nitride material formed by the method are also provided.

    METHOD OF CONTROLLING BOW IN A SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND SEMICONDUCTOR DEVICE
    9.
    发明申请
    METHOD OF CONTROLLING BOW IN A SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：WO2022185067A1

    公开(公告)日：2022-09-09

    申请号：PCT/GB2022/050571

    申请日：2022-03-03

    Applicant: PORO TECHNOLOGIES LTD

    Inventor： ZHU, Tongtong ,  LIU, Yingjun ,  ALI, Muhammad

    IPC: H01L33/00 ,  H01L21/02

    Abstract: A method of controlling bow in a layered semiconductor structure comprises the steps of: providing a layered semiconductor structure comprising a first layer of III-nitride semiconductor material on a substrate, the layered semiconductor structure having a first bow, and forming a porous region of III-nitride semiconductor material over the first layer of III-nitride semiconductor material, in which the layered semiconductor structure comprising the porous region has a second bow different from the first bow. A semiconductor structure having controllable bow comprises a first layer of III-nitride semiconductor material on a substrate, and a porous region of III-nitride semiconductor material over the first layer of III- nitride semiconductor material. The layered semiconductor structure comprising the porous region has a second bow, and the second bow is tunable by tuning a porosity and/or thickness of the porous region.

    WAFER HOLDER AND METHOD
    10.
    发明申请
    WAFER HOLDER AND METHOD 审中-公开

    公开(公告)号：WO2021219997A1

    公开(公告)日：2021-11-04

    申请号：PCT/GB2021/051025

    申请日：2021-04-28

    Applicant: PORO TECHNOLOGIES LTD

    Inventor： ZHU, Tongtong ,  LIU, Yingjun

    IPC: C25F3/12 ,  C25F7/00

    Abstract: A wafer holder for holding a semiconductor wafer during electrochemical porosification with an electrolyte comprises a housing for receiving the semiconductor wafer, an aperture in the housing, through which an upper surface of the semiconductor wafer is exposable to the electrolyte, a seal extending around the aperture, for preventing the ingress of electrolyte into the housing; and an electrical contact for making an electrical connection with the semiconductor wafer. A method of electrochemical porosification of a semiconductor wafer comprises the steps of placing a semiconductor wafer in a wafer holder; immersing the housing in an electrolyte, so that the surface of the semiconductor wafer is exposed to electrolyte through the aperture; and applying a potential difference between the semiconductor wafer and the electrolyte.

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