公开(公告)号：WO2021128810A1

公开(公告)日：2021-07-01

申请号：PCT/CN2020/101184

申请日：2020-07-10

Applicant: 厦门乾照光电股份有限公司

Inventor： 卓祥景 ,  程伟 ,  尧刚 ,  万志 ,  蔺宇航

IPC: H01L33/02 ,  H01L33/04 ,  H01L33/06 ,  H01L33/007 ,  H01L33/025

Abstract: 一种发光二极管及其制作方法，该发光二极管包括有复合浅量子阱，提高大电流密度下空穴的注入效率。通过第一界面调制层（321）减缓窄阱宽垒超晶格层（311）和窄阱窄垒超晶格层（312）的界面处的能带弯曲，及通过第二界面调制层（322）减缓窄阱窄垒超晶格层（312）和多量子阱发光层（400）的界面处的能带弯曲，降低由此引入的异质势垒高度，进而降低发光二极管的工作电压且提高发光二极管的发光效率。通过缺陷覆盖层（500）来覆盖填平多量子阱发光层（400）和复合浅量子阱上形成的V型缺陷，而有效地阻挡电流进入V型缺陷，从而有效减少V型缺陷所形成的漏电通道，使得空穴从非V型缺陷区域进入多量子阱发光层（400），增大空穴-电子复合几率，最终提高了发光二极管的可靠性和发光效率。

公开(公告)号：WO2023007176A1

公开(公告)日：2023-02-02

申请号：PCT/GB2022/051999

申请日：2022-07-28

Applicant: PORO TECHNOLOGIES LTD

Inventor： ZHU, Tongtong ,  YUDIN, Alex ,  HAMMERSLEY, Simon

IPC: H01L27/15 ,  H01L25/16 ,  H01L33/16 ,  H01L33/32 ,  H05B45/20 ,  H01L33/06 ,  H01L33/12 ,  H01L33/24 ,  H01L33/62 ,  G09G2300/0439 ,  G09G2300/0452 ,  G09G2320/0666 ,  G09G2340/06 ,  G09G3/2003 ,  G09G3/32 ,  H01L25/167 ,  H01L27/153 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/20

Abstract: A display device comprising a variable-wavelength light emitting diode (LED) is provided. The variable-wavelength LED comprises: an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and the p-doped portion. The light emitting region comprises a light-emitting layer which emits light at a peak emission wavelength under electrical bias thereacross. The variable-wavelength LED is configured to receive a power supply, and the peak emission wavelength of the LED is continuously controllable over an emission wavelength range of at least 40 nm by varying the power supply.

公开(公告)号：WO2023275084A1

公开(公告)日：2023-01-05

申请号：PCT/EP2022/067789

申请日：2022-06-28

Applicant: UNIVERSITÄT LEIPZIG

Inventor： ESQUINAZI, Pablo David ,  MEIJER, Jan Berend ,  KÜPPER, Johannes

IPC: G01N27/04 ,  H01J37/30 ,  H01L21/00 ,  H01L21/66 ,  G01N2033/0095 ,  G01N27/041 ,  H01J2237/24507 ,  H01J2237/31701 ,  H01J37/244 ,  H01L21/266 ,  H01L22/12 ,  H01L33/025

Abstract: Mit der vorliegenden Erfindung werden eine Vorrichtung (10) und ein Verfahren zur Bestimmung des Eindringens eines Teilchens (42a) aus einer Teilchenquelle (40) in ein Material (12) bereitgestellt, durch die eine hoch ortsaufgelöste Teilchendetektion, insbesondere eine Einzelteilchendetektion, in einfacher und kostengünstiger Art und Weise ermöglicht wird. Damit kann das Eindringen von Teilchen (42a) in ein Material (12) schnell und sicher detektiert werden. Außerdem lässt sich mit der vorliegenden Erfindung eine deterministische Teilchenimplantation in einfacher und kostengünstiger Art und Weise verwirklichen.

公开(公告)号：WO2023007178A1

公开(公告)日：2023-02-02

申请号：PCT/GB2022/052001

申请日：2022-07-28

Applicant: PORO TECHNOLOGIES LTD

Inventor： ZHU, Tongtong ,  YUDIN, Alex ,  HAMMERSLEY, Simon

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/16 ,  H01L33/32 ,  H05B45/20 ,  H01L25/16 ,  H01L33/06 ,  H01L33/12 ,  H01L33/24 ,  H01L33/62 ,  G09G2300/0439 ,  G09G2300/0452 ,  G09G2320/0666 ,  G09G2340/06 ,  G09G3/2003 ,  G09G3/32 ,  H01L25/167 ,  H01L27/153 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/20

Abstract: A display device comprises a light emitting diode (LED) which includes a porous semiconductor material, wherein the device comprises a pixel comprising a plurality of subpixels each having a light-emitting layer. A first subpixel has a first light-emitting layer having a first area A1, and a second subpixel has a second light-emitting layer having a second area A2 different from the first area A1. The first subpixel is configured to emit at a first peak wavelength, and the second subpixel is configured to emit at a second peak wavelength different from the first peak wavelength. A method of controlling this display device and a method of manufacturing said display device are also provided.

公开(公告)号：WO2023007177A1

公开(公告)日：2023-02-02

申请号：PCT/GB2022/052000

申请日：2022-07-28

Applicant: PORO TECHNOLOGIES LTD

Inventor： ZHU, Tongtong ,  YUDIN, Alex ,  HAMMERSLEY, Simon

IPC: G09G3/32 ,  H05B45/20 ,  G09G2300/0439 ,  G09G2300/0452 ,  G09G2320/0666 ,  G09G2340/06 ,  G09G3/2003 ,  H01L25/167 ,  H01L27/153 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/62

Abstract: A method of controlling an LED display device comprising an variable-wavelength LED comprises the steps of: providing a power supply to the variable-wavelength LED; and controlling the power supply to vary the peak emission wavelength of the LED within the emission wavelength range. A method of controlling a display device to reproduce a particular spectrum of light is provided.

公开(公告)号：WO2023007174A1

公开(公告)日：2023-02-02

申请号：PCT/GB2022/051997

申请日：2022-07-28

Applicant: PORO TECHNOLOGIES LTD

Inventor： ZHU, Tongtong ,  ALI, Muhammad ,  HAMMERSLEY, Simon

IPC: H01L33/32 ,  H01L33/16 ,  H01L33/00 ,  H01L27/15 ,  H05B45/20 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/24 ,  H01L33/62 ,  H01L25/16 ,  G09G2300/0439 ,  G09G2300/0452 ,  G09G2320/0666 ,  G09G2340/06 ,  G09G3/2003 ,  G09G3/32 ,  H01L25/167 ,  H01L27/153 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025

Abstract: A variable-wavelength light emitting diode (LED) is provided. The variable-wavelength LED comprises an n-doped portion, a p-doped portion, and a light-emitting region located between the n-doped portion and the p-doped portion. The light-emitting region comprises a light-emitting layer which emits light at a peak emission wavelength under electrical bias thereacross. The LED is configured to receive a power supply, and the peak emission wavelength of the LED is continuously controllable over an emission wavelength range of at least 40 nm by varying the power supply. A display device comprising this variable-wavelength LED, a method of controlling said variable-wavelength LED and a method of manufacturing a variable-wavelength LED are also provided.

公开(公告)号：WO2022241222A1

公开(公告)日：2022-11-17

申请号：PCT/US2022/029204

申请日：2022-05-13

Applicant: META PLATFORMS TECHNOLOGIES, LLC

Inventor： LHEUREUX, Guillaume ,  TONKIKH, Alexander ,  HAHN, Berthold ,  BROELL, Markus

IPC: H01L33/00 ,  H01L33/20 ,  H01L33/02 ,  H01L33/30 ,  H01L2933/0016 ,  H01L33/005 ,  H01L33/0062 ,  H01L33/025 ,  H01L33/06 ,  H01L33/38

Abstract: A lateral micro-light emitting diode includes a first semiconductor layer, an active region on the first semiconductor layer and including one or more quantum well layers configured to emit light, a p-type semiconductor region on a first lateral region (e.g., a central region) of the active region, and an n-type semiconductor region on a second lateral region (e.g., peripheral regions) of the active region, where the n-type semiconductor region and the p-type semiconductor region are on a same side of the active region.

公开(公告)号：WO2021247198A1

公开(公告)日：2021-12-09

申请号：PCT/US2021/031456

申请日：2021-05-08

Applicant: FACEBOOK TECHNOLOGIES, LLC

Inventor： HAHN, Berthold ,  LAUERMANN, Thomas ,  BROELL, Markus

IPC: H01L33/14 ,  H01L33/00 ,  H01L33/04 ,  H01L33/32 ,  H01L33/38 ,  H01L33/30 ,  H01L2224/80013 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L24/80 ,  H01L27/156 ,  H01L2933/0066 ,  H01L33/0016 ,  H01L33/0033 ,  H01L33/025 ,  H01L33/06 ,  H01L33/145 ,  H01L33/24 ,  H01L33/382 ,  H01L33/46 ,  H01L33/58 ,  H01L33/62

Abstract: A micro-light emitting diode (micro-LED) includes a current aperture to confine the current in a localized region such that the carrier recombination mostly occurs in the localized region to emit photons, thereby reducing the surface recombination and improving the quantum efficiency. The current confinement and localization are achieved using a localized breakthrough of a barrier layer by a localized contact, lightly p-doped active layers to suppress lateral transport of the carriers to the surface region, selective ion implantation, etching, or oxidation of a semiconductor layer, or any combination thereof.