公开(公告)号：WO2007030546A1

公开(公告)日：2007-03-15

申请号：PCT/US2006/034726

申请日：2006-09-06

Applicant: SUPERPOWER, INC.

Inventor： XIONG, Xuming

IPC: H01L39/00

CPC classification number: H01L39/2461

Abstract: A superconductor component is disclosed that includes a metal alloy substrate having a dimension ratio of not less than 10, a compliance layer overlying the substrate, the compliance layer being comprised of an amorphous or nanocrystalline ceramic material having an average grain size not greater than 50 nm, and an IBAD buffer layer overlying the compliance layer. The IBAD buffer layer has a biaxial crystal texture and comprises a material from the group consisting of fluorite type materials, pyrochlore type materials, rare earth C-type materials, non-cubic materials, and layer structured materials. A superconductor layer overlies the IBAD buffer layer.

Abstract translation: 公开了一种超导体部件，其包括尺寸比不小于10的金属合金基板，覆盖在基板上的柔顺层，柔性层由平均晶粒尺寸不大于50nm的非晶或纳米晶体陶瓷材料构成 ，以及覆盖遵从层的IBAD缓冲层。 IBAD缓冲层具有双轴晶体结构，并且包括由萤石型材料，烧绿石型材料，稀土C型材料，非立方体材料和层结构材料组成的组中的材料。 超导体层覆盖IBAD缓冲层。

公开(公告)号：WO2006075997A3

公开(公告)日：2006-07-20

申请号：PCT/US2005/011845

申请日：2005-04-08

Applicant: SUPERPOWER, INC.

Inventor： XIONG, Xuming ,  SELVAMANICKAM, Venkat

IPC: H01L39/24 ,  C23C14/08

Abstract: Methods for depositing, at a very high deposition rate, a biaxially-textured film on a continuously moving metal tape substrate are disclosed. These methods comprise: depositing a film on the substrate with a deposition flux having an oblique incident angle of about 5° to about 80° from the substrate normal, while simultaneously bombarding the deposited film using an ion beam at an ion beam incident angle arranged along either a best ion texture direction of the film or along a second best ion texture direction of the film, thereby forming the biaxially-textured film wherein a deposition flux incident plane is arranged parallel to a direction along which the biaxially-textured film has a fast in-plane growth rate. Superconducting articles comprising a substrate, a biaxially-textured film deposited on said substrate by said methods above; and superconducting layer disposed on the biaxially-textured film are also disclosed.

公开(公告)号：WO2005055247A3

公开(公告)日：2005-06-16

申请号：PCT/US2004/026694

申请日：2004-08-17

Applicant: SUPERPOWER, INC.

Inventor： SELVAMANICKAM, Venkat ,  XIONG, Xuming

IPC: C30B1/02

Abstract: Methods for biaxially-texturing a surface-region of an amorphous material are disclosed, comprising depositing an amorphous material onto a substrate, and supplying active oxygen near the substrate during ion beam bombardment of the amorphous material to create an amorphous material having a biaxially textured surface, wherein the ion beam bombardment occurs at a predetermined oblique incident angle. Methods for producing high-temperature coated superconductors are also disclosed, comprising depositing an amorphous buffer film onto a metal alloy substrate, bombarding a surface-region of the amorphous buffer film with an ion beam at an oblique incident angle while supplying active oxygen to the surface-region of the amorphous buffer film in order to create a biaxially textured surface-region thereon, and growing a superconducting film on the biaxially textured surface-region of the amorphous buffer film to create a high-temperature coated superconductor.

公开(公告)号：WO2008048330A2

公开(公告)日：2008-04-24

申请号：PCT/US2006/062657

申请日：2006-12-28

Applicant: SUPERPOWER, INC.

Inventor： XIONG, Xuming ,  SELVAMANICKAM, Venkat ,  HOU, Ping

IPC: B05D5/12 ,  H01L39/24

CPC classification number: H01L39/2461 ,  Y10S505/74 ,  Y10T29/49014

Abstract: A superconducting article and a method of making a superconducting article is described. The method of forming a superconducting article includes providing a substrate, forming a buffer layer to overlie the substrate, the buffer layer including a first buffer film deposited in the presence of an ion beam assist source and having a uniaxial crystal texture. The method further includes forming a superconducting layer to overlie the buffer layer.

Abstract translation: 描述超导制品和制造超导制品的方法。 形成超导体的方法包括提供衬底，形成覆盖在衬底上的缓冲层，缓冲层包括在离子束辅助源存在下沉积并具有单轴晶体结构的第一缓冲膜。 该方法还包括形成覆盖缓冲层的超导层。

公开(公告)号：WO2006036215A2

公开(公告)日：2006-04-06

申请号：PCT/US2005/015496

申请日：2005-05-04

Applicant: SUPERPOWER, INC.

Inventor： SELVAMANICKAM, Venkat ,  XIONG, Xuming

IPC: C23C14/00

CPC classification number: C23C14/54 ,  C23C14/081 ,  C23C14/46 ,  C23C14/584 ,  G01R19/0061 ,  H01L39/2461

Abstract: A method of forming a superconductive device is provided, including providing a substrate having a dimension ratio of not less than about 10 2 , depositing a buffer film to overlie the substrate by ion beam assisted deposition utilizing and ion beam, monitoring spatial ion beam density of the ion beam over a target area, and depositing a superconductor layer to overlie the buffer film. Monitoring may be carried out by utilizing an ion detector having an acceptance angle of not less than 10°.

Abstract translation: 提供一种形成超导装置的方法，包括提供尺寸比不小于约10

公开(公告)号：WO2011091256A2

公开(公告)日：2011-07-28

申请号：PCT/US2011/022063

申请日：2011-01-21

Applicant: SUPERPOWER, INC. ,  LLAMBES, Juan Carlos H. ,  XIONG, Xuming

Inventor： LLAMBES, Juan Carlos H. ,  XIONG, Xuming

IPC: H02H7/00

CPC classification number: H02H9/023 ,  H01F29/10 ,  H01F29/14 ,  H01F2006/001 ,  Y02E40/69 ,  Y10T29/49014

Abstract: A superconducting fault current-limiter is provided, including a superconducting element configured to resistively or inductively limit a fault current, and one or more variable-impedance shunts electrically coupled in parallel with the superconducting element. The variable-impedance shunt(s) is configured to present a first impedance during a superconducting state of the superconducting element and a second impedance during a normal resistive state of the superconducting element. The superconducting element transitions from the superconducting state to the normal resistive state responsive to the fault current, and responsive thereto, the variable-impedance shunt(s) transitions from the first to the second impedance. The second impedance of the variable-impedance shunt(s) is a lower impedance than the first impedance, which facilitates current flow through the variable-impedance shunt(s) during a recovery transition of the superconducting element from the normal resistive state to the superconducting state, and thus, facilitates recovery of the superconducting element under load.

Abstract translation: 提供了一种超导故障电流限制器，包括被配置为电阻或电感地限制故障电流的超导元件以及与超导元件并联电耦合的一个或多个可变阻抗并联电路。 可变阻抗分流器被配置为在超导元件的超导状态期间呈现第一阻抗，并且在超导元件的正常电阻状态期间呈现第二阻抗。 超导元件响应于故障电流从超导状态转变到正常电阻状态，并响应于此，可变阻抗分流从第一阻抗转换到第二阻抗。 可变阻抗分流器的第二阻抗是比第一阻抗低的阻抗，这有助于在超导元件从正常电阻状态到超导的恢复转变期间电流流过可变阻抗分流器 状态，从而有助于在负载下回收超导元件。

公开(公告)号：WO2007136421A3

公开(公告)日：2007-11-29

申请号：PCT/US2006/062655

申请日：2006-12-28

Applicant: SUPERPOWER, INC.

Inventor： XIONG, Xuming ,  SELVAMANICKAM, Venkat ,  HOU, Ping

IPC: H01B12/00

Abstract: A superconducting article is provided that includes a substrate, an anti-epitaxial film over the substrate, a buffer film having biaxial crystal texture over the anti-epitaxial film, and a superconductor layer over the second buffer film. Also provided is a superconducting article as a tape, in a power cable, and a power transformer.