公开(公告)号：WO2013188551A3

公开(公告)日：2013-12-19

申请号：PCT/US2013/045444

申请日：2013-06-12

Applicant: UNIVERSITY OF HOUSTON SYSTEM ,  SUPERPOWER, INC. ,  SELVAMANICKAM, Venkat ,  CHEN, Yimin

Inventor： SELVAMANICKAM, Venkat ,  CHEN, Yimin

IPC: H01B12/06

Abstract: A method and composition for doped HTS tapes having directional flux pinning and critical current.

公开(公告)号：WO2009105426A2

公开(公告)日：2009-08-27

申请号：PCT/US2009/034291

申请日：2009-02-17

Applicant: SUPERPOWER, INC.

Inventor： BHATTACHARYA, Raghu, N. ,  ZHANG, Xun ,  SELVAMANICKAM, Venkat

IPC: H01L39/24

CPC classification number: H01L39/247

Abstract: A method of forming a superconducting article includes providing a substrate tape, forming a superconducting layer overlying the substrate tape, and depositing a capping layer overlying the superconducting layer. The capping layer includes a noble metal and has a thickness not greater than about 1.0 micron. The method further includes electrodepositing a stabilizer layer overlying the capping layer using a solution that is non-reactive to the superconducting layer. The superconducting layer has an as-formed critical current I C(AF) and a post-stabilized critical current I C(PS) . The I C(PS) is at least about 95% of the I C(AF) .

Abstract translation: 形成超导制品的方法包括提供衬底带，形成覆盖衬底带的超导层，以及沉积覆盖超导层的覆盖层。 封盖层包括贵金属并具有不大于约1.0微米的厚度。 该方法还包括使用对超导层无反应性的溶液电沉积覆盖在覆盖层上的稳定剂层。 超导层具有如此形成的临界电流I C（AF）和后稳定的临界电流I C（PS）。 I C（PS）是I C（AF）的至少约95％。

公开(公告)号：WO2006137873A2

公开(公告)日：2006-12-28

申请号：PCT/US2005/033448

申请日：2005-09-16

Applicant: SUPERPOWER, INC. ,  SELVAMANICKAM, Venkat

Inventor： SELVAMANICKAM, Venkat

CPC classification number: H01L39/2441 ,  C23C16/408 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/481 ,  C23C16/545 ,  Y10S505/732 ,  Y10T29/49014

Abstract: A CVD apparatus capable of substantially simultaneously processing multiple portions of at least one substrate or substantially simultaneously processing portions of multiple substrates or substantially simultaneously processing multiple portions of at least one substrate and portions of multiple substrates, the CVD apparatus is described. The CVD apparatus includes a reactor, at least one substrate heater, at least one precursor supply system, at least one precursor injector, optionally, communicating with at least one temperature regulated manifold, at least one reactants mixer, and, optionally, at least one controller communicating with at least one substrate heater, the at least one precursor supply system, the at least one precursor injector, the at least one temperature regulated manifold, and combinations thereof.

Abstract translation: 一种能够基本上同时处理至少一个基板的多个部分或基本上同时处理多个基板的部分或基本上同时处理至少一个基板和多个基板的多个部分的多个部分的CVD装置，描述了CVD装置。 CVD装置包括反应器，至少一个基板加热器，至少一个前体供应系统，至少一个前体喷射器，任选地与至少一个温度调节的歧管连通，至少一个反应物混合器，以及任选的至少一个 控制器与至少一个衬底加热器，所述至少一个前体供应系统，所述至少一个前体喷射器，所述至少一个温度调节歧管及其组合相连通。

公开(公告)号：WO2005081658A2

公开(公告)日：2005-09-09

申请号：PCT/US2004/016639

申请日：2004-05-25

Applicant: SUPERPOWER, INC.

Inventor： SELVAMANICKAM, Venkat ,  LEE, Hee-Gyoun

IPC: C04B35/45 ,  C23C16/00 ,  C23C16/40 ,  C23C16/455 ,  C23C16/54 ,  H01L39/12 ,  H01L39/24

CPC classification number: H01L39/2441 ,  C04B35/4508 ,  C04B35/6264 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/6584 ,  C04B2235/79 ,  C23C16/408 ,  C23C16/45523 ,  C23C16/54 ,  H01L39/128 ,  Y02T50/67

Abstract: An OCVD apparatus and process for producing multi-layer HTS-coated tapes with increased current capacity which includes multiple liquid precursor sources, each having an associated pump and vaporizer, the outlets of which feed a multiple compartment showerhead apparatus within an MOCVD reactor. The multiple compartment showerhead apparatus is located in close proximity to an associated substrate heater which together define multiple deposition sectors in a deposition zone.

Abstract translation: 一种用于生产具有增加的电流容量的多层HTS涂覆带的OCVD装置和方法，其包括多个液体前体源，每个具有相关联的泵和蒸发器，其出口在MOCVD反应器内供给多室喷淋头装置。 多隔室喷头装置位于紧邻相关联的基板加热器，其一起在沉积区域中限定多个沉积扇区。

公开(公告)号：WO2005060632A2

公开(公告)日：2005-07-07

申请号：PCT/US2004/041753

申请日：2004-12-14

Applicant: SUPERPOWER, INC.

Inventor： SELVAMANICKAM, Venkat

IPC: C23C8/02 ,  C23C8/16 ,  H01L39/24

CPC classification number: C23C8/02 ,  C23C8/16 ,  H01L39/2451 ,  Y10S505/73 ,  Y10S505/74 ,  Y10S505/742 ,  Y10T29/49014

Abstract: The present invention provides a high-throughput system for the ex-situ formation of a superconducting thin film, such as rare-earth-barium-copper-oxide (REBCO), atop a continuous length of buffered metal substrate tape by heating a buffered metal substrate tape coated with precursors of REBCO. These precursors, when heated and introduced to water vapor within a process chamber, decompose to form a functional superconducting thin film epitaxial to the buffer layer. A chamber such as a metalorganic chemical vapor deposition (MOCVD) reactor having showerhead and substrate heater assemblies designed for the creation of a long and wide deposition zone is well suited for use in the process the system. The chamber could be of cold-wall type where the walls are not heated or could of hot-wall type where the walls are heated.

Abstract translation: 本发明提供了一种高通量系统，用于通过加热缓冲金属在连续长度的缓冲金属基材带上方，在诸如稀土 - 氧化钡 - 氧化铜（REBCO）之类的位置上形成超导薄膜 涂覆有REBCO前体的底胶带。 这些前体当被加热并被引入处理室内的水蒸汽时分解形成向缓冲层外延的功能超导薄膜。 具有喷淋头和基板加热器组件的金属有机化学气相沉积（MOCVD）反应器的腔室，其设计用于产生长而宽的沉积区域，非常适用于该系统的过程。 该室可以是冷壁型，其中壁不加热或者壁可以被加热。

公开(公告)号：WO2005006350A2

公开(公告)日：2005-01-20

申请号：PCT/US2004/016632

申请日：2004-05-25

Applicant: SUPERPOWER, INC.

Inventor： SELVAMANICKAM, Venkat ,  SATHIRAJU, Srinivas

IPC: H01B

CPC classification number: H01L39/2461 ,  C23C14/562

Abstract: The present invention is a deposition system for the production of coated substrates that provides a first deposition process that subsequently feeds a second deposition process and where the two deposition processes are occurring concurrently. The consecutive deposition system includes two dynamically isolated deposition chambers. The substrate is helically wrapped about a cooling block within the first deposition chamber such that the tape is exposed to a deposition zone a number of times sufficient to correspond to the desired film thickness. A shielding element may be included in the second deposition chamber to limit the size of the second chamber deposition zone and thus the film thickness of the second coating layer.

Abstract translation: 本发明是用于生产涂覆的基底的沉积系统，其提供随后进料第二沉积工艺的第一沉积工艺，并且两个沉积工艺同时进行。 连续沉积系统包括两个动态隔离的沉积室。 衬底围绕第一沉积室内的冷却块螺旋缠绕，使得带子暴露于沉积区域足以对应于所需膜厚度的次数。 屏蔽元件可以包括在第二沉积室中以限制第二室沉积区的尺寸，从而限制第二涂层的膜厚度。

公开(公告)号：WO2008147452A1

公开(公告)日：2008-12-04

申请号：PCT/US2007/084451

申请日：2007-11-12

Applicant: SUPERPOWER, INC.

Inventor： QIAO, Yunfei ,  SELVAMANICKAM, Venkat

IPC: H01B12/00

CPC classification number: H01L39/143 ,  H01L39/2461 ,  Y10S428/93 ,  Y10T428/31678

Abstract: A superconducting article is provided that includes a substrate, wherein the substrate is untextured and comprises a nickel-based alloy containing primarily nickel and not less than about 20wt% of an alloying element, and wherein the substrate is essentially free of Mo and Mn. The superconducting article further includes a buffer layer overlying the substrate and a high-temperature superconducting (HTS) layer overlying the buffer layer.

Abstract translation: 提供了一种超导制品，其包括基底，其中所述基底是非结构化的，并且包括主要含镍且不小于约20重量％的合金元素的镍基合金，并且其中所述基底基本上不含Mo和Mn。 超导制品还包括覆盖衬底的缓冲层和覆盖缓冲层的高温超导（HTS）层。

公开(公告)号：WO2006110637A3

公开(公告)日：2006-10-19

申请号：PCT/US2006/013278

申请日：2006-04-10

Applicant: SUPERPOWER, INC.

Inventor： SELVAMANICKAM, Venkat ,  XIE, Yi-Yuan ,  KNOLL, Allan, Robert

IPC: B32B7/04 ,  H01B12/00 ,  H01L39/22

Abstract: A superconducting article includes a first superconductive segment having a nominal thickness t n1 , a second superconductive segment having a nominal thickness t n2 , and a joint region comprising a splice connecting the first and second superconductive segments together. The splice overlies portions of both the first and second superconductive segments along the joint region, the joint region having a thickness t jr , wherein t jr is not greater than at least one of 1.8t n1 and 1.8t n2 .

公开(公告)号：WO2006075997A3

公开(公告)日：2006-07-20

申请号：PCT/US2005/011845

申请日：2005-04-08

Applicant: SUPERPOWER, INC.

Inventor： XIONG, Xuming ,  SELVAMANICKAM, Venkat

IPC: H01L39/24 ,  C23C14/08

Abstract: Methods for depositing, at a very high deposition rate, a biaxially-textured film on a continuously moving metal tape substrate are disclosed. These methods comprise: depositing a film on the substrate with a deposition flux having an oblique incident angle of about 5° to about 80° from the substrate normal, while simultaneously bombarding the deposited film using an ion beam at an ion beam incident angle arranged along either a best ion texture direction of the film or along a second best ion texture direction of the film, thereby forming the biaxially-textured film wherein a deposition flux incident plane is arranged parallel to a direction along which the biaxially-textured film has a fast in-plane growth rate. Superconducting articles comprising a substrate, a biaxially-textured film deposited on said substrate by said methods above; and superconducting layer disposed on the biaxially-textured film are also disclosed.

公开(公告)号：WO2006036547A3

公开(公告)日：2006-04-06

申请号：PCT/US2005/032677

申请日：2005-09-14

Applicant: SUPERPOWER, INC.

Inventor： SELVAMANICKAM, Venkat

IPC: C23C14/00 ,  C23C14/32

Abstract: A method for producing a superconducting conductor is disclosed, including providing a substrate, depositing a buffer film having a biaxial texture to overlie the substrate by reactive sputtering, and depositing a superconducting layer to overlie the buffer film. Deposition of the buffer film is carried out by exposing the substrate along a deposition zone to a material plume generated by bombarding a target in the presence of a magnetic field, the deposition zone having a length of at least 1.0m. The assist ions may be generated from a gridless ion source. The buffer film may have a biaxial texture having an out-of-plane crystallographic texture represented by a mosaic spread of not greater than 30°.