DIELECTRIC MATERIALS TO PREVENT PHOTORESIST POISONING
    91.
    发明申请
    DIELECTRIC MATERIALS TO PREVENT PHOTORESIST POISONING 审中-公开
    电介质材料,以防止光催化污染

    公开(公告)号:WO2004104698A2

    公开(公告)日:2004-12-02

    申请号:PCT/US2004/015531

    申请日:2004-05-18

    IPC: G03F

    Abstract: Methods are provided for depositing a dielectric material for use as an anti-reflective coating and sacrificial dielectric material in damascene formation. In one aspect, a process is provided for processing a substrate including depositing an acidic dielectric layer on the substrate by reacting an oxygen-containing organosilicon compound and an acidic compound, depositing a photoresist material on the acidic dielectric layer, and patterning the photoresist layer. The acidic dielectric layer may be used as a sacrificial layer in forming a feature definition by etching a partial feature definition, depositing the acidic dielectric material, etching the remainder of the feature definition, and then removing the acidic dielectric material to form a feature definition.

    Abstract translation: 提供了用于沉积电介质材料的方法,用作抗镶嵌层中的抗反射涂层和牺牲电介质材料。 在一个方面,提供了一种处理衬底的方法,包括通过使含氧有机硅化合物和酸性化合物反应,在酸性电介质层上沉积光致抗蚀剂材料,并使光致抗蚀剂层图形化,在衬底上沉积酸性介电层。 通过蚀刻部分特征定义,沉积酸性电介质材料,蚀刻特征定义的其余部分,然后除去酸性介电材料以形成特征定义,酸性介电层可用作形成特征定义的牺牲层。

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