公开(公告)号：WO2012068260A1

公开(公告)日：2012-05-24

申请号：PCT/US2011/061009

申请日：2011-11-16

Applicant: RF MICRO DEVICES, INC.

Inventor： KHLAT, Nadim ,  PRASAD, Shanthi

IPC: G06F7/556 ,  H03M7/50

CPC classification number: G06F7/556 ,  G06F1/0307 ,  H03F1/0227 ,  H03M7/04

Abstract: A digital log gain to digital linear gain multiplier is disclosed. The digital log gain to digital linear gain multiplier includes a log gain splitter adapted to split a log gain input into an integer log part and a remainder log part. A log scale-to-linear scale converter is adapted to output a linear gain value in response to the integer log part and the remainder log part. A gain multiply circuit is adapted to multiply a digital signal by the linear gain value to output a gain-enhanced digital signal.

Abstract translation: 公开了对数字线性增益乘数的数字对数增益。 对数字线性增益乘数的数字对数增益包括一个对数增益分配器，适用于将日志增益输入分解为整数对数部分和余数对数部分。 对数缩放比例转换器适于响应于整数对数部分和其余日志部分输出线性增益值。 增益乘法电路适于将数字信号乘以线性增益值以输出增益增强数字信号。

公开(公告)号：WO2012027619A4

公开(公告)日：2012-03-01

申请号：PCT/US2011/049243

申请日：2011-08-25

Applicant: RF MICRO DEVICES, INC.

Inventor： KHLAT, Nadim

IPC: H03F3/00

Abstract: Embodiments disclosed in the detailed description relate to a pseudo-envelope follower power management system for managing the power delivered to a linear RF power amplifier. The pseudo-envelope follower power management system may include a switch mode power supply converter and a parallel amplifier cooperatively coupled to provide a linear RF power amplifier supply to the linear RF power amplifier. The pseudo-envelope follower power management system may include a charge pump configured to power the parallel amplifier. The charge pump may generate a plurality of output voltage levels. The charge pump may be either a boost or a boost/buck charge pump. The pseudo-envelope follower power management system may include an offset voltage control circuit configured to provide feedback to the switch mode power supply converter to regulate an offset voltage developed across a coupling device that couples the output of the parallel amplifier to the linear RF power amplifier supply.

公开(公告)号：WO2012027619A1

公开(公告)日：2012-03-01

申请号：PCT/US2011049243

申请日：2011-08-25

Applicant: RF MICRO DEVICES INC

Inventor： KHLAT NADIM

IPC: H03F3/00

CPC classification number: H03F1/0211 ,  H03F1/0227 ,  H03F2200/432

Abstract: Embodiments disclosed in the detailed description relate to a pseudo-envelope follower power management system for managing the power delivered to a linear RF power amplifier. The pseudo-envelope follower power management system may include a switch mode power supply converter and a parallel amplifier cooperatively coupled to provide a linear RF power amplifier supply to the linear RF power amplifier. The pseudo-envelope follower power management system may include a charge pump configured to power the parallel amplifier. The charge pump may generate a plurality of output voltage levels. The charge pump may be either a boost or a boost/buck charge pump. The pseudo-envelope follower power management system may include an offset voltage control circuit configured to provide feedback to the switch mode power supply converter to regulate an offset voltage developed across a coupling device that couples the output of the parallel amplifier to the linear RF power amplifier supply.

Abstract translation: 具体实施方式中公开的实施例涉及用于管理传送到线性RF功率放大器的功率的伪包络跟随器功率管理系统。 伪包络跟随器功率管理系统可以包括开关模式电源转换器和协作耦合的并联放大器，以向线性RF功率放大器提供线性RF功率放大器电源。 伪包络跟随器功率管理系统可以包括被配置为向并行放大器供电的电荷泵。 电荷泵可以产生多个输出电压电平。 电荷泵可以是升压或升压/降压电荷泵。 伪包络跟随器功率管理系统可以包括偏移电压控制电路，该偏移电压控制电路被配置为向开关模式电源转换器提供反馈以调节耦合器件两端产生的偏移电压，该耦合器件将并行放大器的输出耦合到线性RF功率放大器 供应。

公开(公告)号：WO2006068862A3

公开(公告)日：2007-05-03

申请号：PCT/US2005044794

申请日：2005-12-12

Applicant: RF MICRO DEVICES INC

Inventor： LINSKY JOEL B ,  MILLER BRIAN

IPC: H03D1/00 ,  H04B1/10

CPC classification number: H04L25/0206 ,  H04B1/715 ,  H04B17/336

Abstract: A system and method for classifying channels in a frequency hopping wireless communication system is provided. A data collection engine operates to obtain channel metrics (30) indicating the level of interference for each channel used by the wireless communication system. A data analysis engine (32) operates to provide a channel map for adaptive frequency hopping (AFH) (26) and/or a channel map for channel avoidance (24). More specifically, the data analysis engine first operates to filter the channel metrics to remove channel metrics indicative of frequency hopping interference. Next, the channels are divided into a number of channel blocks each including at least two adjacent channels. For each channel block, the channel metrics of the channels within the channel block arc combined to provide a metric sum. The data analysis engine then operates to classify each channel as usable or unusable based on the metric sums for each of the channel blocks.

Abstract translation: 提供了一种用于对跳频无线通信系统中的信道进行分类的系统和方法。 数据收集引擎操作以获得指示由无线通信系统使用的每个信道的干扰水平的信道度量（30）。 数据分析引擎（32）操作以提供用于自适应跳频（AFH）（26）的频道图和/或用于频道回避的频道图（24）。 更具体地，数据分析引擎首先操作以过滤信道度量以去除指示跳频干扰的信道度量。 接下来，通道被分成多个通道块，每个通道块包括至少两个相邻的通道。 对于每个信道块，信道块内的信道的信道度量被组合以提供度量和。 然后，数据分析引擎基于每个信道块的度量和操作将每个信道分类为可用或不可用。

公开(公告)号：WO2004075612A1

公开(公告)日：2004-09-02

申请号：PCT/US2004/003271

申请日：2004-02-05

Applicant: RF MICRO DEVICES, INC.

Inventor： JORGENSON, Jon, D. ,  SHAH, Milind ,  STEEL, Victor, E.

IPC: H05K1/16

CPC classification number: H05K1/162 ,  H05K1/165 ,  H05K1/167 ,  H05K3/4652 ,  H05K2201/0347 ,  H05K2201/0355 ,  H05K2201/0959 ,  H05K2201/09763

Abstract: The present invention embeds passive components within a multilayer substrate used for mounting integrated circuits and other electronic components to form an electronic module or circuit board. During construction of the multilayer substrate, passive components are attached to an inside surface of a metallic foil layer. The inside surface of the metallic foil layer is then laminated to another metallic foil layer, such that the foil layers are parallel to but separated from each other. As such, the passive component is embedded within the multilayer substrate. Contacts are formed for the passive component by etching away portions of the foil layer on which the passive component resides. Electrical connections can be routed in the foil to effectively couple the passive component to a circuit formed on the multilayer substrate as desired. The embedded passive components can take various forms, such as capacitors, inductors, and resistors.

Abstract translation: 本发明将无源部件嵌入用于安装集成电路和其他电子部件的多层基板中，以形成电子模块或电路板。 在多层基板的构造期间，无源部件附着到金属箔层的内表面。 然后将金属箔层的内表面层压到另一金属箔层上，使得箔层彼此平行但分开。 因此，被动部件嵌入在多层基板内。 通过蚀刻去除被动部件所在的箔层的部分，为无源部件形成触点。 电连接可以在箔中布线以有效地将无源部件耦合到根据需要在多层基板上形成的电路。 嵌入式无源器件可以采取各种形式，如电容器，电感器和电阻器。

公开(公告)号：WO0231969A3

公开(公告)日：2003-09-18

申请号：PCT/US0142592

申请日：2001-10-09

Applicant: RF MICRO DEVICES INC

Inventor： DENING DAVID

IPC: H03F1/30 ,  H03F1/56 ,  H03F3/19

CPC classification number: H03F1/302 ,  H03F1/565 ,  H03F3/19

Abstract: A bias circuit suitable for use with a radio frequency linear power amplifier compensates for amplifier gain compression by providing bias current responsive to an amplitude of an RF signal to be amplified at a bias current gain greater than unity. The bias circuit comprises a minimal number of active and passive components and is suitable for implementation in a range of process technologies. Bias current gain may be configured over a range of less than to greater than unity gain by adjusting a reference voltage supplied to the bias circuit and by adjusting a resistor value included within the bias circuit. In implementation, the bias circuit is configured to have a bias current gain that complements a characteristic gain compression associated with a particular radio frequency power amplifier.

Abstract translation: 适合与射频线性功率放大器一起使用的偏置电路通过提供响应于以大于1的偏置电流增益放大的RF信号的幅度的偏置电流来补偿放大器增益压缩。 偏置电路包括最少数量的主动和无源部件，并且适用于一系列工艺技术中的实现。 偏置电流增益可以通过调整提供给偏置电路的参考电压并且通过调整包括在偏置电路内的电阻值来配置在小于大于单位增益的范围上。 在实现中，偏置电路被配置为具有补偿与特定射频功率放大器相关联的特征增益压缩的偏置电流增益。

公开(公告)号：WO2014116933A3

公开(公告)日：2014-11-20

申请号：PCT/US2014012927

申请日：2014-01-24

Applicant: RF MICRO DEVICES INC

Inventor： KHLAT NADIM ,  KAY MICHAEL R ,  NAG MANBIR SINGH

IPC: H03F3/189 ,  H02M1/00 ,  H02M3/158

CPC classification number: H03F1/0227 ,  H02M2001/0045 ,  H03F1/0266 ,  H03F3/195 ,  H03F3/24 ,  H03F2200/375 ,  H03F2200/432 ,  H03F2200/451 ,  H03F2200/471 ,  H03F2200/555

Abstract: A parallel amplifier and a parallel amplifier power supply are disclosed according to one embodiment of the present disclosure. The parallel amplifier power supply provides a parallel amplifier power supply signal, which is adjustable on a communications slot-to-communications slot basis. During envelope tracking, the parallel amplifier regulates an envelope power supply voltage based on the parallel amplifier power supply signal. The parallel amplifier and an offset capacitance voltage control loop are disclosed according to an alternate embodiment of the present disclosure. The parallel amplifier has a parallel amplifier output, which is coupled to an envelope tracking power supply output via an offset capacitive element. The offset capacitive element has an offset capacitive voltage. The offset capacitance voltage control loop regulates the offset capacitive voltage, which is adjustable on a communications slot-to-communications slot basis.

Abstract translation: 根据本公开的一个实施例公开了一种并行放大器和并行放大器电源。 并联放大器电源提供并行放大器电源信号，可以在通信插槽到通信插槽的基础上进行调整。 在包络跟踪期间，并联放大器基于并行放大器电源信号调节包络电源电压。 根据本公开的替代实施例公开了并联放大器和偏移电容电压控制环路。 并联放大器具有并联放大器输出，其通过偏移电容元件耦合到包络跟踪电源输出。 偏移电容元件具有偏移电容电压。 偏移电容电压控制回路调节偏移电容电压，其可以在通信插槽到通信插槽的基础上进行调整。

公开(公告)号：WO2014116933A2

公开(公告)日：2014-07-31

申请号：PCT/US2014/012927

申请日：2014-01-24

Applicant: RF MICRO DEVICES, INC

Inventor： KHLAT, Nadim ,  KAY, Michael R. ,  NAG, Manbir Singh

IPC: H03F3/189

CPC classification number: H03F1/0227 ,  H02M2001/0045 ,  H03F1/0266 ,  H03F3/195 ,  H03F3/24 ,  H03F2200/375 ,  H03F2200/432 ,  H03F2200/451 ,  H03F2200/471 ,  H03F2200/555

Abstract: A parallel amplifier and a parallel amplifier power supply are disclosed according to one embodiment of the present disclosure. The parallel amplifier power supply provides a parallel amplifier power supply signal, which is adjustable on a communications slot-to-communications slot basis. During envelope tracking, the parallel amplifier regulates an envelope power supply voltage based on the parallel amplifier power supply signal. The parallel amplifier and an offset capacitance voltage control loop are disclosed according to an alternate embodiment of the present disclosure. The parallel amplifier has a parallel amplifier output, which is coupled to an envelope tracking power supply output via an offset capacitive element. The offset capacitive element has an offset capacitive voltage. The offset capacitance voltage control loop regulates the offset capacitive voltage, which is adjustable on a communications slot-to-communications slot basis.

Abstract translation: 根据本公开的一个实施例公开了一种并行放大器和并联放大器电源。 并行放大器电源提供并行放大器电源信号，该信号可在通信时隙到通信时隙的基础上进行调整。 在包络跟踪期间，并行放大器基于并行放大器电源信号来调节包络电源电压。 根据本公开的替代实施例公开了并联放大器和偏移电容电压控制回路。 并联放大器有一个并联放大器输出，它通过偏置电容元件与包络跟踪电源输出相连。 偏移电容元件具有偏移电容电压。 偏移电容电压控制环路调节偏移电容电压，可在通信插槽对通信时隙的基础上进行调节。

公开(公告)号：WO2014031813A1

公开(公告)日：2014-02-27

申请号：PCT/US2013/056105

申请日：2013-08-22

Applicant: RF MICRO DEVICES, INC

Inventor： RITENOUR, Andrew P.

IPC: H01C7/12 ,  H01L27/02

CPC classification number: H01L27/0629 ,  H01L27/0248 ,  H01L29/2003 ,  H01L29/778

Abstract: A semiconductor device with electrical overstress (EOS) protection is disclosed. The semiconductor device includes a semi-insulating layer, a first contact disposed onto the semi-insulating layer, and a second contact disposed onto the semi-insulating layer. A passivation layer is disposed onto the semi-insulating layer. The passivation layer has a dielectric strength that is greater than that of the semi-insulating layer to ensure that a voltage breakdown occurs within the semi-insulating layer within a semi-insulating region between the first contact and the second contact before a voltage breakdown can occur in the passivation layer.

Abstract translation: 公开了一种具有电过应力（EOS）保护的半导体器件。 半导体器件包括半绝缘层，设置在半绝缘层上的第一触点以及设置在半绝缘层上的第二触点。 钝化层设置在半绝缘层上。 钝化层的介电强度大于半绝缘层的介电强度，以确保在电压击穿之前在第一触点与第二触点之间的半绝缘区域内的半绝缘层内发生电压击穿 发生在钝化层中。

公开(公告)号：WO2014018861A1

公开(公告)日：2014-01-30

申请号：PCT/US2013/052277

申请日：2013-07-26

Applicant: RF MICRO DEVICES, INC.

Inventor： KHLAT, Nadim

IPC: H03F1/02

CPC classification number: H03H21/0021 ,  H03F1/0227 ,  H03F3/195 ,  H03F3/245 ,  H03F2200/432 ,  H03F2200/555 ,  H03H7/0107 ,  H03H7/0153 ,  H03H2007/013

Abstract: A parallel amplifier (14), a switching supply (12), and a radio frequency (RF) notch filter (18) are disclosed. The parallel amplifier has a parallel amplifier output, such that the switching supply is coupled to the parallel amplifier output. Further, the RF notch filter is coupled between the parallel amplifier output and a ground. The RF notch filter has a selectable notch frequency, which is based on an RF duplex frequency.

Abstract translation: 公开了并行放大器（14），开关电源（12）和射频（RF）陷波滤波器（18）。 并联放大器具有并联放大器输出，使得开关电源耦合到并联放大器输出。 此外，RF陷波滤波器耦合在并行放大器输出和地之间。 射频陷波滤波器具有可选的陷波频率，该频率基于射频双工频率。