公开(公告)号：WO2014099260A1

公开(公告)日：2014-06-26

申请号：PCT/US2013/071417

申请日：2013-11-22

Applicant: APPLIED MATERIALS, INC.

Inventor： LIU, Jie ,  ZHANG, Jingchun ,  WANG, Anchuan ,  INGLE, Nitin K. ,  PARK, Seung ,  CHEN, Zhijun ,  HSU, Ching-Mei

IPC: H01L21/3065

CPC classification number: H01L21/32136 ,  H01J37/32357

Abstract: Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds.

Abstract translation: 描述了相对于图案化异质结构上的其它材料蚀刻暴露的氮化钛的方法，并且可以包括由含氟前体形成的远程等离子体蚀刻。 包括来自远程等离子体的等离子体流出物的前体组合流入基板处理区域以在各种操作条件下以高氮化钛选择性蚀刻图案化结构。 该方法可用于以比各种金属，氮化物和氧化物化合物更快的速率除去氮化钛。

公开(公告)号：WO2014046858A1

公开(公告)日：2014-03-27

申请号：PCT/US2013/057253

申请日：2013-08-29

Applicant: APPLIED MATERIALS, INC.

Inventor： CHEN, Zhijun ,  ZHANG, Jingchun ,  WANG, Anchuan ,  INGLE, Nitin, K.

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01L21/76802

Abstract: A method of etching exposed silicon-nitrogen-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-nitrogen-and-carbon-containing material. The plasma effluents react with the patterned heterogeneous structures to selectively remove silicon- nitrogen-and-carbon-containing material from the exposed silicon-nitrogen-and-carbon- containing material regions while very slowly removing selected other exposed materials. The silicon-nitrogen-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element controls the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-nitrogen-and-carbon- containing material at a faster rate than exposed silicon oxide or exposed silicon nitride.

Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的含硅 - 氮和碳的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与暴露的含硅 - 和碳的材料的区域反应。 等离子体流出物与图案化的异质结构反应，以便从暴露的含硅 - 碳和碳的材料区域中选择性地除去含氮和碳的材料，同时非常缓慢地除去选定的其它暴露的材料。 含氮和碳的材料的选择性部分取决于位于远程等离子体和基板处理区域之间的离子抑制元件的存在。 离子抑制元件控制到达基底的离子充电物质的数量。 该方法可以用于以比暴露的氧化硅或暴露的氮化硅更快的速率选择性地除去含硅 - 和碳的材料。

公开(公告)号：WO2014046845A1

公开(公告)日：2014-03-27

申请号：PCT/US2013/056636

申请日：2013-08-26

Applicant: APPLIED MATERIALS, INC.

Inventor： CHEN, Zhijun ,  ZHANG, Jingchun ,  HSU, Ching-Mei ,  PARK, Seung ,  WANG, Anchuan ,  INGLE, Nitin K.

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi TM processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.

Abstract translation: 描述了在图案化异质结构上蚀刻暴露的氧化硅的方法，并且包括由含氟前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含氮和氢的前体结合。 因此，与典型的SiconiTM工艺相比，反应物产生的蚀刻具有高氧化硅选择性的图案化异质结构，同时衬底处于高温。 蚀刻进行而不会在基板表面上产生残留物。 该方法可以用于去除硅或氧化硅，同时除去硅或多晶硅，氮化硅或氮化钛。

公开(公告)号：WO2014042843A1

公开(公告)日：2014-03-20

申请号：PCT/US2013/056243

申请日：2013-08-22

Applicant: APPLIED MATERIALS, INC.

Inventor： PARK, Seung H. ,  WANG, Yunyu ,  ZHANG, Jingchun ,  WANG, Anchuan ,  INGLE, Nitin K.

IPC: H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/3065

Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. Reactants thereby produced etch the patterned heterogeneous structures to remove two separate regions of differing silicon oxide at different etch rates. The methods may be used to remove low density silicon oxide while removing less high density silicon oxide.

Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的氧化硅的方法，并且包括从远程等离子体蚀刻产生的气相蚀刻。 远程等离子体激发含氟前体。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与水蒸汽结合。 由此产生的反应物蚀刻图案化的异相结构，以以不同的蚀刻速率移除不同氧化硅的两个分开的区域。 该方法可用于去除低密度氧化硅，同时去除较少的高密度氧化硅。

公开(公告)号：WO2013025336A1

公开(公告)日：2013-02-21

申请号：PCT/US2012/048842

申请日：2012-07-30

Applicant: APPLIED MATERIALS, INC. ,  WANG, Yunyu ,  WANG, Anchuan ,  ZHANG, Jingchun ,  INGLE, Nitin K. ,  LEE, Young S.

Inventor： WANG, Yunyu ,  WANG, Anchuan ,  ZHANG, Jingchun ,  INGLE, Nitin K. ,  LEE, Young S.

IPC: H01L21/3065 ,  H01L21/318

CPC classification number: H01L21/3065 ,  H01L21/31116

Abstract: Method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes remote plasma etch formed from fluorine-containing precursor and oxygen-containing precursor. Plasma effluents from remote plasma are flowed into a substrate processing region where the plasma effluents react with exposed regions of silicon-and-nitrogen-containing material. Plasmas effluents react with patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. Silicon-and-nitrogen-containing material selectivity results partly from presence of an ion suppression element positioned between the remote plasma and substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide.

Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的含硅和氮的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含硅和氮的材料的暴露区域反应。 等离子体流出物与图案化的异质结构反应，从暴露的含硅和氮的材料区域选择性地除去含硅和氮的材料，同时非常缓慢地除去其它暴露的材料。 含氮和氮的材料的选择性部分地来自位于远程等离子体和衬底处理区域之间的离子抑制元件的存在。 离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。 该方法可用于以超过二氧化硅速率的二十倍来选择性地除去含硅和氮的材料。

公开(公告)号：WO2012125656A2

公开(公告)日：2012-09-20

申请号：PCT/US2012/028957

申请日：2012-03-13

Applicant: APPLIED MATERIALS, INC. ,  ZHANG, Jingchun ,  WANG, Anchuan ,  INGLE, Nitin

Inventor： ZHANG, Jingchun ,  WANG, Anchuan ,  INGLE, Nitin

IPC: H01L21/3065 ,  H01L21/318

CPC classification number: H01L21/31116 ,  C09K13/00 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069

Abstract: A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer.

Abstract translation: 从包括氮化硅层和氧化硅层的衬底选择性地蚀刻氮化硅的方法包括：使含氟气体流入衬底处理室的等离子体产生区域，并且将能量施加到 在等离子体产生区域中产生等离子体的含氟气体。 等离子体包含氟自由基和氟离子。 该方法还包括过滤等离子体以提供具有比氟离子更高浓度​​的氟自由基的反应性气体并且使反应性气体流入基板处理室的气体反应区域。 该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。 反应气体以比反应气体蚀刻氧化硅层更高的蚀刻速率蚀刻氮化硅层。