公开(公告)号：WO2013052712A2

公开(公告)日：2013-04-11

申请号：PCT/US2012/058818

申请日：2012-10-04

Applicant: APPLIED MATERIALS, INC. ,  WANG, Anchuan ,  ZHANG, Jingchun ,  INGLE, Nitin K. ,  LEE, Young S.

Inventor： WANG, Anchuan ,  ZHANG, Jingchun ,  INGLE, Nitin K. ,  LEE, Young S.

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01L21/3081 ,  H01L21/32137

Abstract: Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials.

Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的硅的方法，并且包括由含氟前体和含氢前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与暴露的硅区域反应。 等离子体流出物与图案化的异质结构反应以选择性地除去硅，同时非常缓慢地除去其它暴露的材料。 硅选择性部分地导致远离等离子体中含氢前体的优势，氢终止在图案化异质结构上的表面。 含氟前体的流速要低得多，在氢封端的硅上逐渐取代氟氢，从而从硅的暴露区域选择性除去硅。 这些方法可用于选择性地除去硅比氧化硅，氮化硅和各种含金属材料更快的硅。

公开(公告)号：WO2012102809A3

公开(公告)日：2012-10-04

申请号：PCT/US2011066601

申请日：2011-12-21

Applicant: APPLIED MATERIALS INC ,  WANG ANCHUAN ,  CHEN XIAOLIN ,  LEE YOUNG S

Inventor： WANG ANCHUAN ,  CHEN XIAOLIN ,  LEE YOUNG S

IPC: H01L21/205

CPC classification number: H01L21/0262 ,  C23C16/0245 ,  C23C16/045 ,  C23C16/24 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/28556

Abstract: Methods of forming polysilicon layers are described. The methods include forming a high-density plasma from a silicon precursor in a substrate processing region containing the deposition substrate. The described methods produce polycrystalline films at reduced substrate temperature (e.g.

Abstract translation: 描述形成多晶硅层的方法。 所述方法包括在包含沉积衬底的衬底处理区域中从硅前体形成高密度等离子体。 所描述的方法相对于现有技术在降低的衬底温度（例如<500℃）下产生多晶膜。 偏置等离子体功率调整的可用性进一步使得能够调整形成的多晶硅层的共形性。 当掺杂物被包括在高密度等离子体中时，它们可以以不需要单独的激活步骤的方式结合到多晶硅层中。

公开(公告)号：WO2012115750A2

公开(公告)日：2012-08-30

申请号：PCT/US2012/023356

申请日：2012-01-31

Applicant: APPLIED MATERIALS, INC. ,  ZHANG, Jingchun ,  WANG, Anchuan ,  INGLE, Nitin K.

Inventor： ZHANG, Jingchun ,  WANG, Anchuan ,  INGLE, Nitin K.

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01L28/91

Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. The chemical reaction resulting from the combination produces reactants which etch the patterned heterogeneous structures to produce, in embodiments, a thin residual structure exhibiting little deformation. The methods may be used to conformally trim silicon oxide while removing little or no silicon, polysilicon, silicon nitride, titanium or titanium nitride. In an exemplary embodiment, the etch processes described herein have been found to remove mold oxide around a thin cylindrical conducting structure without causing the cylindrical structure to significantly deform.

Abstract translation: 描述了在图案化异质结构上蚀刻暴露的氧化硅的方法，并且包括由含氟前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与水蒸汽结合。 由组合产生的化学反应产生反应物，其蚀刻图案化的异质结构，以在实施方案中产生几乎没有变形的薄的残余结构。 这些方法可以用于保守地修整氧化硅，同时去除很少或没有硅，多晶硅，氮化硅，钛或氮化钛。 在示例性实施例中，已经发现本文所述的蚀刻工艺是在薄的圆柱形导电结构周围除去模制氧化物，而不会导致圆柱形结构显着变形。

公开(公告)号：WO2004114366A3

公开(公告)日：2004-12-29

申请号：PCT/US2004/018147

申请日：2004-06-02

Applicant: APPLIED MATERIALS, INC. ,  KARIM, Ziaul, J. ,  KAPOOR, Bikram ,  WANG, Anchuan ,  LI, DongQuin ,  OZEKI, Katsunary ,  VELLAIKAL, Manoj ,  LI, Zhuang

Inventor： KARIM, Ziaul, J. ,  KAPOOR, Bikram ,  WANG, Anchuan ,  LI, DongQuin ,  OZEKI, Katsunary ,  VELLAIKAL, Manoj ,  LI, Zhuang

IPC: H01L21/30

Abstract: A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step (216) includes and insert gas such as He, but includes H 2 during the remainder deposition step (224). The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.

公开(公告)号：WO2013032638A1

公开(公告)日：2013-03-07

申请号：PCT/US2012/049768

申请日：2012-08-06

Applicant: APPLIED MATERIALS, INC. ,  WANG, Yunyu ,  WANG, Anchuan ,  ZHANG, Jingchun ,  INGLE, Nitin, K. ,  LEE, Young, S.

Inventor： WANG, Yunyu ,  WANG, Anchuan ,  ZHANG, Jingchun ,  INGLE, Nitin, K. ,  LEE, Young, S.

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01L21/3065 ,  H01L21/32137

Abstract: A method of suppressing the etch rate for exposed silicon-and-oxygen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. Examples of materials whose selectivity is increased using this technique include silicon nitride and silicon. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-oxygen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including a nitrogen-containing precursor and a hydrogen-containing precursor. The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.

Abstract translation: 描述了抑制图案化异质结构上暴露的含硅和氧的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。 使用该技术提高其选择性的材料的实例包括氮化硅和硅。 远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氧的材料上形成保护性的固体副产物。 第一级的等离子体流出物由包括含氮前体和含氢前体的前体组合的远程等离子体形成。 远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地除去缺乏保护性固体副产物的材料。 第二级的等离子体流出物由含氟前体的远程等离子体形成。

公开(公告)号：WO2012125654A3

公开(公告)日：2012-12-27

申请号：PCT/US2012028952

申请日：2012-03-13

Applicant: APPLIED MATERIALS INC ,  ZHANG JINGCHUN ,  WANG ANCHUAN ,  INGLE NITIN

Inventor： ZHANG JINGCHUN ,  WANG ANCHUAN ,  INGLE NITIN

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32422 ,  H01L21/31122 ,  H01L21/32136

Abstract: A method of selectively etching a metal-containing film from a substrate comprising a metal-containing layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions, and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the metal-containing layer at a higher etch rate than the reactive gas etches the silicon oxide layer.

Abstract translation: 一种从包含含金属层和氧化硅层的基板选择性地蚀刻含金属膜的方法包括使含氟气体流入基板处理室的等离子体产生区，并且将能量施加到含氟 气体在等离子体产生区域中产生等离子体。 等离子体包含氟自由基和氟离子。 该方法还包括过滤等离子体以提供具有比氟离子更高浓度​​的氟自由基的反应性气体，并且使反应性气体流入基板处理室的气体反应区域。 该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。 反应气体以比反应气体蚀刻氧化硅层更高的蚀刻速率蚀刻含金属层。

公开(公告)号：WO2011112812A3

公开(公告)日：2011-09-15

申请号：PCT/US2011/027900

申请日：2011-03-10

Applicant: APPLIED MATERIALS, INC. ,  GANGULY, Udayan ,  RANISH, Joseph, M. ,  HUNTER, Aaron, M. ,  TANG, Jing ,  OLSEN, Christopher, S. ,  SCOTNEY-CASTLE, Matthew, D. ,  NGUYEN, Vicky ,  SRINIVASAN, Swaminathan ,  SWENBERG, Johanes, F. ,  WANG, Anchuan ,  INGLE, Nitin, K. ,  HEMKAR, Manish ,  MARIN, Jose, A.

Inventor： GANGULY, Udayan ,  RANISH, Joseph, M. ,  HUNTER, Aaron, M. ,  TANG, Jing ,  OLSEN, Christopher, S. ,  SCOTNEY-CASTLE, Matthew, D. ,  NGUYEN, Vicky ,  SRINIVASAN, Swaminathan ,  SWENBERG, Johanes, F. ,  WANG, Anchuan ,  INGLE, Nitin, K. ,  HEMKAR, Manish ,  MARIN, Jose, A.

IPC: H01L21/3065

Abstract: Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

公开(公告)号：WO2009085974A2

公开(公告)日：2009-07-09

申请号：PCT/US2008/087465

申请日：2008-12-18

Applicant: APPLIED MATERIALS, INC. ,  WANG, Anchuan ,  MUNGEKAR, Hemant, P. ,  WU, Jing ,  LEE, Young, S.

Inventor： MUNGEKAR, Hemant, P. ,  WU, Jing ,  LEE, Young, S.

IPC: C23C16/24 ,  C23C16/34 ,  H01L21/20

CPC classification number: H01L21/3185 ,  C23C16/345 ,  C23C16/505 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31111

Abstract: The present invention pertains to methods of depositing low wet etch rate silicon nitride films on substrates using high-density plasma chemical vapor deposition techniques at substrate temperatures below 600°C. The method additionally involves the maintenance of a relatively high ratio of nitrogen to silicon in the plasma and a low process pressure.

Abstract translation: 本发明涉及在低于600℃的衬底温度下使用高密度等离子体化学气相沉积技术在衬底上沉积低湿蚀刻速率氮化硅膜的方法。 该方法还涉及在等离子体中维持相对高的氮与硅的比例以及较低的工艺压力。

公开(公告)号：WO2013052712A3

公开(公告)日：2013-06-20

申请号：PCT/US2012058818

申请日：2012-10-04

Applicant: APPLIED MATERIALS INC ,  WANG ANCHUAN ,  ZHANG JINGCHUN ,  INGLE NITIN K ,  LEE YOUNG S

Inventor： WANG ANCHUAN ,  ZHANG JINGCHUN ,  INGLE NITIN K ,  LEE YOUNG S

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01L21/3081 ,  H01L21/32137

Abstract: Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials.

Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的硅的方法，并且包括由含氟前体和含氢前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，在衬底处理区域中，等离子体流出物与硅的暴露区域反应。 等离子体流出物与图案化的异质结构反应以选择性地去除硅，同时非常缓慢地去除其他暴露的材料。 硅选择性的结果部分来自远程等离子体中含氢前体的优势，其中氢终止于图案化的异质结构上的表面。 含氟前体的流量低得多，以逐渐将氟取代为氢封端的硅上的氢，从而从硅的暴露区域选择性地除去硅。 这些方法可用于选择性地去除硅，其速度比氧化硅，氮化硅和各种含金属材料快得多。

公开(公告)号：WO2013033527A3

公开(公告)日：2013-04-25

申请号：PCT/US2012053329

申请日：2012-08-31

Applicant: APPLIED MATERIALS INC ,  WANG YUNYU ,  WANG ANCHUAN ,  ZHANG JINGCHUN ,  INGLE NITIN K ,  LEE YOUNG S

Inventor： WANG YUNYU ,  WANG ANCHUAN ,  ZHANG JINGCHUN ,  INGLE NITIN K ,  LEE YOUNG S

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/32137

Abstract: A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is increased using the method. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-nitrogen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including nitrogen trifluoride and hydrogen (H2). The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.

Abstract translation: 描述了抑制图案化异质结构上暴露的含硅和氮的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。 使用该方法，硅相对于氮化硅和其它含硅和氮的材料的蚀刻选择性增加。 远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氮的材料上形成保护性固体副产物。 第一级的等离子体流出物由包括三氟化氮和氢气（H 2）在内的前体组合的远程等离子体形成。 远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地除去缺乏保护性固体副产物的材料。 第二级的等离子体流出物由含氟前体的远程等离子体形成。