LITHOGRAPHIC APPARATUS, METROLOGY SYSTEM, AND ILLUMINATION SYSTEMS WITH STRUCTURED ILLUMINATION

    公开(公告)号:WO2021058313A1

    公开(公告)日:2021-04-01

    申请号:PCT/EP2020/075668

    申请日:2020-09-14

    Abstract: A system (500) includes an illumination system (502), a lens element (506), and a detector (504). The illumination system generates a beam of radiation (510) having a first spatial intensity distribution (800) at a pupil plane (528) and a second spatial intensity distribution (900) at a plane of a target (514). The first spatial intensity distribution comprises an annular intensity profile (802) or an intensity profile corresponding to three or more beams. The lens element focuses the beam onto the target. The second spatial intensity distribution is a conjugate of the first intensity distribution and has an intensity profile corresponding to a central beam (902) and one or more side lobes (904) that are substantially isolated from the central beam. The central beam has a beam diameter of approximately 20 microns or less at the target. The detector receives radiation scattered by the target and generates a measurement signal based on the received radiation..

    WAFER ALIGNMENT USING FORM BIREFRINGENCE OF TARGETS OR PRODUCT

    公开(公告)号:WO2020169357A1

    公开(公告)日:2020-08-27

    申请号:PCT/EP2020/053044

    申请日:2020-02-06

    Abstract: An alignment method includes directing an illumination beam with a first polarization state to form a diffracted beam with a second polarization state from an alignment target, and passing the diffracted beam through a polarization analyzer. The alignment method further includes measuring a polarization state of the diffracted beam and determining a location of the alignment target from the measured polarization state relative to its initial polarization state. The alignment target includes a plurality of diffraction gratings with a single pitch and two or more duty cycles, wherein the pitch is smaller than a wavelength of the illumination beam, and the location of the alignment target corresponds to the duty cycle of the diffraction grating.

    ADAPTIVE ALIGNMENT
    14.
    发明申请
    ADAPTIVE ALIGNMENT 审中-公开

    公开(公告)号:WO2020114829A1

    公开(公告)日:2020-06-11

    申请号:PCT/EP2019/082502

    申请日:2019-11-26

    Abstract: A method of applying a measurement correction includes determining an orthogonal subspace used to characterize a first principal component of the measurement and a second principal component of the measurement, and rotating the orthogonal subspace by a first angle such that the first principle component rotates to become a first factor vector and the second principle component rotates to become a second factor vector. An asymmetry vector is generated by rotating the second factor vector by a second angle, where the asymmetry vector and the first factor vector define a non-orthogonal subspace. An asymmetry contribution is determined in the measurement based on the projection of the measurement onto the first factor vector in the non- orthogonal subspace. The method also includes subtracting the asymmetry contribution from the measurement.

    METHOD, SUBSTRATE AND APPARATUS TO MEASURE PERFORMANCE OF OPTICAL METROLOGY

    公开(公告)号:WO2018202414A1

    公开(公告)日:2018-11-08

    申请号:PCT/EP2018/059699

    申请日:2018-04-17

    Abstract: A method including illuminating a product test substrate with radiation from a component, wherein the product test substrate does not have a device pattern etched therein and yields a non-zero sensitivity when illuminated, the non-zero sensitivity representing a change in an optical response characteristic of the product test substrate with respect to a change in a characteristic of the radiation; measuring at least a part of the radiation redirected by the product test substrate to determine a parameter value; and taking an action with respect to the component based on the parameter value.

    ALIGNMENT SYSTEM WAFER STACK BEAM ANALYZER
    16.
    发明申请
    ALIGNMENT SYSTEM WAFER STACK BEAM ANALYZER 审中-公开
    对齐系统晶圆堆栈分析器

    公开(公告)号:WO2017207269A1

    公开(公告)日:2017-12-07

    申请号:PCT/EP2017/061779

    申请日:2017-05-17

    Abstract: An alignment system obtains the characteristics of the light coming back from a wafer stack. A beam analyzer measures changes in wavelength, polarization, and beam profile. This measured information allows for in-line process variation corrections. The correction provides optical monitoring of individual mark stack variations, and in turn provides information to reduce individual mark process variation-induced accuracy error.

    Abstract translation: 对准系统获得从晶片堆回来的光的特性。 光束分析仪测量波长,偏振和光束轮廓的变化。 这种测量信息允许在线工艺变化修正。 该校正提供了对各个标记堆叠变化的光学监测,并且反过来提供了用于减少个体标记过程变化引起的精度误差的信息。

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