公开(公告)号：WO2012057903A1

公开(公告)日：2012-05-03

申请号：PCT/US2011/047768

申请日：2011-08-15

Applicant: CBRITE INC. ,  SHIEH, Chan-long ,  FOONG, Fatt ,  YU, Gang

Inventor： SHIEH, Chan-long ,  FOONG, Fatt ,  YU, Gang

IPC: H01L29/788

CPC classification number: H01L29/7869 ,  H01L29/78696

Abstract: A metal oxide semiconductor device including an active layer of metal oxide, a layer of gate dielectric, and a layer of low trap density material. The layer of low trap density material is sandwiched between the active layer of metal oxide and the layer of gate dielectric. The layer of low trap density material has a major surface parallel and in contact with a major surface of the active layer of metal oxide to form a low trap density interface with the active layer of metal oxide. A second layer of low trap density material can optionally be placed in contact with the opposed major surface of the active layer of metal oxide so that a low trap density interface is formed with both surfaces of the active layer of metal oxide.

Abstract translation: 一种金属氧化物半导体器件，包括金属氧化物的有源层，栅极电介质层和低陷阱密度材料层。 低陷阱密度材料层夹在金属氧化物的有源层和栅极电介质层之间。 低陷阱密度材料层的主表面平行并与金属氧化物的有源层的主表面接触，以形成与金属氧化物的有源层的低陷阱密度界面。 可以可选地将第二层低陷阱密度材料放置成与金属氧化物的有源层的相对的主表面接触，使得与金属氧化物的活性层的两个表面形成低陷阱密度界面。

公开(公告)号：WO2008057560A2

公开(公告)日：2008-05-15

申请号：PCT/US2007/023441

申请日：2007-11-06

Applicant: CBRITE INC. ,  GONG, Xiong ,  YANG, Kaixia ,  YU, Gang ,  NILSSON, Boo, Jorgen, Lars ,  SHIEH, Chan-Long ,  LEE, Hsing-chung ,  FOONG, Fatt

Inventor： GONG, Xiong ,  YANG, Kaixia ,  YU, Gang ,  NILSSON, Boo, Jorgen, Lars ,  SHIEH, Chan-Long ,  LEE, Hsing-chung ,  FOONG, Fatt

CPC classification number: H01L29/861 ,  G02F1/1365 ,  G02F1/167 ,  H01L29/22 ,  H01L29/417 ,  H01L29/786 ,  H01L45/00 ,  H01L51/0035 ,  H01L51/0579 ,  H01L51/0587

Abstract: Two-terminal switching devices of MIM type having at least one electrode formed by a liquid phase processing method are provided for use in active matrix backplane applications; more specifically, MIM devices with symmetric current-voltage characteristics are applied for LCD active matrix backplane applications, and MIM devices with asymmetric current-voltage characteristics are applied for active matrix backplane implementation for electrophoretic displays (EPD) and rotating element displays. In particular, the combination of the bottom metal, metal-oxide insulator and solution-processible top conducting layer enables high throughput, roll-to-roll process for flexible displays.

Abstract translation: 提供MIM类型的具有至少一个由液相处理方法形成的电极的两端开关器件用于有源矩阵背板应用; 更具体地说，具有对称电流 - 电压特性的MIM器件被应用于LCD有源矩阵背板应用，并且具有不对称电流 - 电压特性的MIM器件被应用于电泳显示器（EPD）和旋转元件显示器的有源矩阵背板实现。 特别是，底部金属，金属氧化物绝缘体和可溶液加工的顶部导电层的组合使得高产量，柔性显示器的卷对卷工艺成为可能。