公开(公告)号：WO2013088325A1

公开(公告)日：2013-06-20

申请号：PCT/IB2012/057130

申请日：2012-12-10

Applicant: LAM RESEARCH CORPORATION ,  LAM RESEARCH AG

Inventor： ZHONG, Qinghua ,  KIMURA, Yoshie ,  TAE WON, Kim ,  FU, Qian ,  LO, Gladys ,  UPADHYAYA, Ganesh ,  YAMAGUCHI, Yoko

IPC: H01L21/336

CPC classification number: H01L29/66477 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/78

Abstract: A method for forming devices with silicon gates over a substrate is provided. Silicon nitride spacers are formed on sides of the silicon gates. An ion implant is provided using the silicon nitride spacers as masks to form ion implant regions. A nonconformal layer is selectively deposited over the spacers and gates that selectively deposits a thicker layer on tops of the gates and spacers and between spacers than on sidewalls of the silicon nitride spacers. Sidewalls of the nonconformal layer are etched away on sidewalls of the silicon nitride spacers. The silicon nitride spacers are trimmed.

Abstract translation: 提供了一种用于在衬底上形成具有硅栅极的器件的方法。 在硅栅极的侧面上形成氮化硅间隔物。 使用氮化硅间隔物作为掩模提供离子注入以形成离子注入区域。 选择性地将非共形层沉积在间隔物和浇口上，所述间隔物和浇口选择性地将较厚的层沉积在栅极和间隔物的顶部以及间隔物之间​​，而不是在氮化硅间隔物的侧壁上沉积。 在氮化硅间隔物的侧壁上蚀刻掉非共形层的侧壁。 修整氮化硅间隔物。

公开(公告)号：WO2009073361A1

公开(公告)日：2009-06-11

申请号：PCT/US2008/083942

申请日：2008-11-18

Applicant: LAM RESEARCH CORPORATION ,  LEE, Wonchul ,  FU, Qian ,  LIU, Shenjian ,  PU, Brian

Inventor： LEE, Wonchul ,  FU, Qian ,  LIU, Shenjian ,  PU, Brian

IPC: H01L21/3065

CPC classification number: H01L21/32136

Abstract: A method for etching a conductive layer through a mask with wider and narrower features is provided. A steady state etch gas is flowed. A steady state RF power is provided to form a plasma from the etch gas. A pulsed bias voltage is provided during the steady state etch gas flow, wherein the pulsed bias voltage has a frequency between 1 to 10,000 Hz. Wider and narrower features are etched into the conductive layer using the plasma formed from the etch gas.

Abstract translation: 提供了通过具有更宽和更窄特征的掩模蚀刻导电层的方法。 稳态蚀刻气体流过。 提供稳态RF功率以从蚀刻气体形成等离子体。 在稳态蚀刻气流期间提供脉冲偏压，其中脉冲偏压具有1至10,000Hz之间的频率。 使用由蚀刻气体形成的等离子体将更宽和更窄的特征蚀刻到导电层中。

公开(公告)号：WO2009067381A1

公开(公告)日：2009-05-28

申请号：PCT/US2008/083412

申请日：2008-11-13

Applicant: LAM RESEARCH CORPORATION ,  LEE, Wonchul ,  FU, Qian ,  LIU, Shenjian ,  PU, Bryan

Inventor： LEE, Wonchul ,  FU, Qian ,  LIU, Shenjian ,  PU, Bryan

IPC: H01L21/3065

CPC classification number: H01L21/32136 ,  H01L21/32138

Abstract: A method for etching features of different aspect ratios in a tungsten containing layer is provided. An etch gas is provided containing a tungsten etch component and a deposition component. A plasma is formed from the provided etch gas. A tungsten containing layer patterned with wide and narrow features is etched with the provided plasma.

Abstract translation: 提供了一种用于蚀刻含钨层中不同纵横比的特征的方法。 提供了含有钨蚀刻部件和沉积部件的蚀刻气体。 由所提供的蚀刻气体形成等离子体。 用所提供的等离子体蚀刻用宽而窄的特征图案化的含钨层。

公开(公告)号：WO2008151120A1

公开(公告)日：2008-12-11

申请号：PCT/US2008/065512

申请日：2008-06-02

Applicant: LAM RESEARCH CORPORATION ,  FU, Qian ,  LIU, Shenjian ,  LEE, Wonchul ,  PU, Bryan

Inventor： FU, Qian ,  LIU, Shenjian ,  LEE, Wonchul ,  PU, Bryan

IPC: H01L21/3065

CPC classification number: H01L21/32139 ,  H01L21/32136 ,  H01L21/32137

Abstract: A method for etching features of different aspect ratios in a conductive layer is provided. The method comprises: depositing over the conductive layer with an aspect ratio dependent deposition; etching features into the conductive layer with an aspect ratio dependent etching of the conductive layer; and repeating the depositing and the etching at least once.

Abstract translation: 提供了一种用于蚀刻导电层中不同宽高比特征的方法。 该方法包括：在长宽比依赖沉积物上沉积导电层; 将导电层的纵横比依赖蚀刻蚀刻到导电层中; 并重复沉积和蚀刻至少一次。