HEATING SYSTEM FOR AN OPTICAL COMPONENT OF A LITHOGRAPHIC APPARATUS

    公开(公告)号:WO2019042656A1

    公开(公告)日:2019-03-07

    申请号:PCT/EP2018/069558

    申请日:2018-07-18

    Abstract: A system for heating an optical component of a lithographic apparatus, the system comprising a heating radiation source, the heating radiation source being configured to emit heating radiation for heating of the optical component, wherein the system is configured to direct the heating radiation emitted by the heating radiation source onto the optical component, a portion of the heating radiation being absorbed by the optical component and another portion of the heating radiation being reflected by optical component, and wherein the system is configured to vary or change a property of the heating radiation emitted by the heating radiation source such that the other portion of the heating radiation that is reflected by the optical component is constant during operation of the lithographic apparatus.

    METHOD OF DETERMINING A PARAMETER OF A PATTERN TRANSFER PROCESS, DEVICE MANUFACTURING METHOD

    公开(公告)号:WO2019038054A1

    公开(公告)日:2019-02-28

    申请号:PCT/EP2018/071059

    申请日:2018-08-02

    Abstract: A method of determining a parameter of a pattern transfer process and device manufacturing methods are disclosed. In one arrangement, a method comprises obtaining a detected representation of radiation redirected by a structure. The structure is a structure formed by applying a pattern processing to a pattern transferred to an earlier formed structure by a pattern transfer process. The pattern processing is such as to remove one or more selected regions in a horizontal plane of the earlier formed structure to form a pattern in the horizontal plane. The pattern is defined by a unit cell that is mirror symmetric with respect to an axis of mirror symmetry. An asymmetry in the detected representation is determined. The determined asymmetry in the detected representation is used to determine a parameter of the pattern transfer process.

    METHOD TO DETERMINE A PATTERNING PROCESS PARAMETER

    公开(公告)号:WO2019034409A1

    公开(公告)日:2019-02-21

    申请号:PCT/EP2018/070709

    申请日:2018-07-31

    Abstract: A method, including: measuring a first plurality of instances of a metrology target on a substrate processed using a patterning process to determine values of at least one parameter of the patterning process using a first metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target; and measuring a second different plurality of instances of the metrology target on the same substrate to determine values of the at least one parameter of the patterning process using a second metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target, wherein the second metrology recipe differs from the first metrology recipe in at least one characteristic of the applying radiation to, and detecting radiation from, instances of the metrology target.

    PARTICLE SUPPRESSION SYSTEMS AND METHODS
    225.
    发明申请

    公开(公告)号:WO2019020443A1

    公开(公告)日:2019-01-31

    申请号:PCT/EP2018/069459

    申请日:2018-07-18

    Abstract: An object stage can include a first structure and a second structure movable relative to the first structure. The second structure is configured to support an object. The object stage also includes a seal plate movably coupled to the first structure or the second structure, but not both. And the object stage includes at least one actuator configured to move the seal plate such that a substantially constant gap is defined between the seal plate and the first structure or the second structure that is not coupled to the seal plate.

    METROLOGY PARAMETER DETERMINATION AND METROLOGY RECIPE SELECTION

    公开(公告)号:WO2019002003A1

    公开(公告)日:2019-01-03

    申请号:PCT/EP2018/066117

    申请日:2018-06-18

    Abstract: A method including: for a metrology target, having a first biased target structure and a second differently biased target structure, created using a patterning process, obtaining metrology data including signal data for the first target structure versus signal data for the second target structure, the metrology data being obtained for a plurality of different metrology recipes and each metrology recipe specifying a different parameter of measurement; determining a statistic, fitted curve or fitted function through the metrology data for the plurality of different metrology recipes as a reference; and identifying at least two different metrology recipes that have a variation of the collective metrology data of the at least two different metrology recipes from a parameter of the reference that crosses or meets a certain threshold.

    METHOD OF DETERMINING A PERFORMANCE PARAMETER OF A PROCESS

    公开(公告)号:WO2019001877A1

    公开(公告)日:2019-01-03

    申请号:PCT/EP2018/064027

    申请日:2018-05-29

    Abstract: Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (λ1, λ2). Pixel values of the captured images are combined (748) to obtain one or more synthesized images (750). A plurality of synthesized diffraction signals are extracted (744) from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer.

    DETERMINING EDGE ROUGHNESS PARAMETERS
    230.
    发明申请

    公开(公告)号:WO2018233947A1

    公开(公告)日:2018-12-27

    申请号:PCT/EP2018/062778

    申请日:2018-05-16

    Abstract: A method of determining an edge roughness parameter has the steps: (1010) controlling a radiation system to provide a spot of radiation at a measurement position for receiving a substrate; (1020) receiving a measurement signal from a sensor for measuring intensity of a forbidden diffraction order (such as a second order) being diffracted by a metrology target at the measurement position when the metrology target is illuminated by the spot of radiation, the metrology target comprising a repetitive pattern being configured by configuration of a linewidth / pitch ratio (of about 0.5) to control an amount of destructive interference that leads to forbidding of the diffraction order, the sensor being configured to provide the measurement signal based on the measured intensity; and (1040) determining an edge roughness parameter based on the measured intensity of the forbidden diffraction order.

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