METROLOGY METHOD
    1.
    发明申请
    METROLOGY METHOD 审中-公开

    公开(公告)号:WO2022135962A1

    公开(公告)日:2022-06-30

    申请号:PCT/EP2021/085058

    申请日:2021-12-09

    Abstract: Disclosed is a method of measuring a target on a substrate comprising: illuminating a target with measurement radiation comprising at least a first wavelength, collecting the resultant scattered radiation within a collection numerical aperture; and determining a parameter of interest from said scattered radiation. The target comprises a mediator periodic structure and at least a first target periodic structure each in a respective different layer on the substrate, wherein a pitch of at least the mediator periodic structure is below a single diffraction limit defined by the collection numerical aperture and a wavelength of said measurement radiation, such that said scattered radiation comprises double diffracted radiation, said double diffracted radiation comprising radiation having undergone two sequential same-order diffractions of opposite sign.

    METROLOGY METHOD AND APPARATUS AND COMPUTER PROGRAM

    公开(公告)号:WO2019020292A1

    公开(公告)日:2019-01-31

    申请号:PCT/EP2018/066594

    申请日:2018-06-21

    Abstract: Disclosed are a method, computer program and a metrology apparatus for measuring a process effect parameter relating to a manufacturing process for manufacturing integrated circuits on a substrate. The method comprises determining for a structure, a first quality metric value for a quality metric from a plurality of measurement values each relating to a different measurement condition while cancelling or mitigating for the effect of the process effect parameter on the plurality of measurement values and a second quality metric value for the quality metric from at least one measurement value relating to at least one measurement condition without cancelling or mitigating for the effect of the process effect parameter on the at least one measurement value. The process effect parameter value for the process effect parameter can then be calculated from the first quality metric value and the second quality metric value, for example by calculating their difference.

    POLARIZATION INDEPENDENT INTERFEROMETER
    5.
    发明申请
    POLARIZATION INDEPENDENT INTERFEROMETER 审中-公开
    极化独立干扰仪

    公开(公告)号:WO2015051970A1

    公开(公告)日:2015-04-16

    申请号:PCT/EP2014/069412

    申请日:2014-09-11

    Abstract: Apparatus, systems, and methods are used for detecting the alignment of a feature on a substrate using a polarization independent interferometer. The apparatus, system, and methods include optical elements that receive light that has diffracted or scattered from a mark on a substrate. The optical elements may split the diffracted light into multiple subbeams of light which are detected by one or more detectors. The diffracted light may be combined optically or during processing after detection. The system may determine alignment and/or overlay based on the received diffracted light having any polarization angle or state.

    Abstract translation: 装置,系统和方法用于使用偏振无关干涉仪来检测基板上特征的对准。 该装置,系统和方法包括从基板上的标记衍射或散射的光的光学元件。 光学元件可以将衍射光分成由一个或多个检测器检测的多个子光束。 衍射光可以在光学上或在检测后的处理期间组合。 该系统可以基于接收到的具有任何偏振角或状态的衍射光来确定对准和/或覆盖。

    METHOD AND APPARATUS FOR MEASURING ASYMMETRY OF A MICROSTRUCTURE, POSITION MEASURING METHOD, POSITION MEASURING APPARATUS, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
    6.
    发明申请
    METHOD AND APPARATUS FOR MEASURING ASYMMETRY OF A MICROSTRUCTURE, POSITION MEASURING METHOD, POSITION MEASURING APPARATUS, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD 审中-公开
    用于测量微结构不对称的方法和装置,位置测量方法,位置测量装置,平面设备和装置制造方法

    公开(公告)号:WO2014068116A1

    公开(公告)日:2014-05-08

    申请号:PCT/EP2013/072949

    申请日:2013-11-04

    CPC classification number: G03F9/7069 G03F9/7088

    Abstract: A lithographic apparatus includes a sensor, such as an alignment sensor including a self-referencing interferometer, configured to determine the position of an alignment target comprising a periodic structure. An illumination optical system focuses radiation of different colors and polarizations into a spot which scans the structure. Multiple position-dependent signals are detected and processed to obtain multiple candidate position measurements. Asymmetry of the structure is calculated by comparing the multiple position- dependent signals. The asymmetry measurement is used to improve accuracy of the position read by the sensor. Additional information on asymmetry may be obtained by an asymmetry sensor receiving a share of positive and negative orders of radiation diffracted by the periodic structure to produce a measurement of asymmetry in the periodic structure.

    Abstract translation: 光刻设备包括传感器,诸如包括自参考干涉仪的对准传感器,其被配置为确定包括周期性结构的对准目标的位置。 照明光学系统将不同颜色和偏振的辐射聚焦到扫描结构的光斑中。 检测并处理多个与位置相关的信号以获得多个候选位置测量。 通过比较多个位置相关信号来计算结构的不对称性。 不对称测量用于提高传感器读取位置的精度。 通过不对称传感器可以获得关于不对称性的附加信息,该不对称传感器接收由周期性结构衍射的辐射的正数和负数的一部分,以产生周期性结构中的不对称性的测量。

    MARK POSITION MEASURING APPARATUS AND METHOD, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
    7.
    发明申请
    MARK POSITION MEASURING APPARATUS AND METHOD, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD 审中-公开
    标记位置测量装置和方法,光刻装置和装置制造方法

    公开(公告)号:WO2014056708A2

    公开(公告)日:2014-04-17

    申请号:PCT/EP2013/069664

    申请日:2013-09-23

    CPC classification number: G03F7/70141 G01B11/14 G03F9/7069 G03F9/7088

    Abstract: An apparatus to measure the position of a mark, the apparatus including an illumination arrangement to direct radiation across a pupil of the apparatus, the illumination arrangement comprising an illumination source to provide multiple-wavelength radiation of substantially equal polarization and a wave plate to alter the polarization of the radiation in dependency of the wavelength, such that radiation of different polarization is supplied; an objective lens to direct radiation on the mark using the radiation supplied by the illumination arrangement while scanning the radiation across the mark in a scanning direction; a radiation processing element to process radiation that is diffracted by the mark and received by the objective lens; and a detection arrangement to detect variation in an intensity of radiation output by the radiation processing element during the scanning and to calculate from the detected variation a position of the mark in at least a first direction of measurement.

    Abstract translation: 一种用于测量标记位置的装置,该装置包括用于将辐射引导穿过该装置的光瞳的照明装置,所述照明装置包括照明源,以提供基本上相等偏振的多波长辐射和波片,以改变 依赖于波长的辐射的极化,使得提供不同极化的辐射; 物镜,用于在扫描方向上扫描横过标记的辐射,使用由照明装置提供的辐射来将辐射引导到标记上; 辐射处理元件,用于处理由所述标记衍射并由所述物镜接收的辐射; 以及检测装置,用于检测在扫描期间由辐射处理元件输出的辐射强度的变化,并且根据检测到的变化来计算至少第一测量方向上的标记的位置。

    METHOD FOR INFERRING A LOCAL UNIFORMITY METRIC

    公开(公告)号:WO2021175521A1

    公开(公告)日:2021-09-10

    申请号:PCT/EP2021/052376

    申请日:2021-02-02

    Abstract: Disclosed is a method of inferring a value for at least one local uniformity metric relating to a product structure, the method comprising: obtaining intensity data comprising an intensity image relating to at least one diffraction order obtained from a measurement on a target; obtaining at least one intensity distribution from said intensity image; determining from said at least one intensity distribution an intensity indicator expressing a variation of either intensity over the at least one diffraction order, or a difference in intensity between two complimentary diffraction orders over the intensity image; and inferring the value for the at least one local uniformity metric from the intensity indicator.

    METHOD AND SYSTEM FOR DETERMINING INFORMATION ABOUT A TARGET STRUCTURE

    公开(公告)号:WO2021013726A1

    公开(公告)日:2021-01-28

    申请号:PCT/EP2020/070284

    申请日:2020-07-17

    Abstract: Methods and systems for determining information about a target structure are disclosed. In one arrangement, a value of an asymmetry indicator for the target structure is obtained. The value of the asymmetry indicator represents an amount of an overlay independent asymmetry in the target structure. An error in an initial overlay measurement performed on the target structure at a previous time is estimated. The estimation is performed using the obtained value of the asymmetry indicator and a relationship between values of the asymmetry indicator and overlay measurement errors caused at least partially by overlay independent asymmetries. An overlay in the target structure is determined using the initial overlay measurement and the estimated error.

    METROLOGY METHOD
    10.
    发明申请
    METROLOGY METHOD 审中-公开

    公开(公告)号:WO2019081200A1

    公开(公告)日:2019-05-02

    申请号:PCT/EP2018/077479

    申请日:2018-10-09

    Abstract: Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.

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