公开(公告)号：WO2005079348A2

公开(公告)日：2005-09-01

申请号：PCT/US2005/004557

申请日：2005-02-11

Applicant: GRANDIS, INC. ,  HUAI, Yiming ,  PAKALA, Mahendra

Inventor： HUAI, Yiming ,  PAKALA, Mahendra

IPC: G11C11/14 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/16 ,  G11C11/1675

Abstract: A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, free, and heat assisted switching layers. The spacer layer resides between the pinned and free layers. The free layer resides between the spacer and heat assisted switching layers. The heat assisted switching layer improves thermal stability of the free layer when the free layer is not being switched, preferably by exchange coupling with the free layer. The free layer is switched using spin transfer when a write current is passed through the magnet element. The write current preferably also heats the magnetic element to reduce the stabilization of the free layer provided by the heat assisted switching layer. In another aspect, the magnetic element also includes a second free layer, a second, nonmagnetic spacer layer, and a second pinned layer. The heat assisted switching layer resides between the two free layers, which are magnetostatically coupled. The second spacer layer resides between the second free and second pinned layers.

Abstract translation: 公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。 磁性元件包括固定，非磁性间隔物，自由和热辅助开关层。 间隔层位于固定层和自由层之间。 自由层位于间隔件和热辅助切换层之间。 当自由层不被切换时，优选通过与自由层的交换耦合，热辅助切换层改善了自由层的热稳定性。 当写入电流通过磁体元件时，使用自旋转移来切换自由层。 写入电流优选还加热磁性元件以减少由热辅助切换层提供的自由层的稳定性。 在另一方面，磁性元件还包括第二自由层，第二非磁性间隔层和第二固定层。 热辅助切换层位于两个自由层之间，这两个自由层是静磁耦合的。 第二间隔层位于第二自由和第二被钉扎层之间。

公开(公告)号：WO2005020242A2

公开(公告)日：2005-03-03

申请号：PCT/US2004/027708

申请日：2004-08-24

Applicant: GRANDIS, INC. ,  NGUYEN, Paul, P. ,  HUAI, Yiming

Inventor： NGUYEN, Paul, P. ,  HUAI, Yiming

IPC: G11C

CPC classification number: G11C11/16 ,  B82Y25/00 ,  G11C11/5607 ,  H01F10/3263 ,  H01L43/08

Abstract: A method and system for providing a magnetic element capable of storing multiple bits is disclosed. The method and system include providing first pinned layer, a first nonmagnetic layer, a first free layer, a connecting layer, a second pinned layer, a second nonmagetic layer and a second free layer. The first pinned layer is ferromagnetic and has a first pinned layer magnetization pinned in a first direction. The first nonmagnetic layer resides between the first pinned layer and the first free layer. The first free layer being ferromagnetic and has a first free layer magnetization. The second pinned layer is ferromagnetic and has a second pinned layer magnetization pinned in a second direction. The connecting layer resides between the second pinned layer and the first free layer. The second nonmagnetic layer resides between the second pinned layer and the second free layer. The second free layer being ferromagnetic and having a second free layer magnetization. The magnetic element is configured to allow the first free layer magnetization and the second free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.

Abstract translation: 公开了一种用于提供能够存储多个位的磁性元件的方法和系统。 该方法和系统包括提供第一被钉扎层，第一非磁性层，第一自由层，连接层，第二钉扎层，第二非弹性层和第二自由层。 第一被钉扎层是铁磁性的并且具有沿第一方向固定的第一钉扎层磁化。 第一非磁性层位于第一被钉扎层和第一自由层之间。 第一自由层是铁磁性的并且具有第一自由层磁化。 第二被钉扎层是铁磁性的并且具有沿第二方向固定的第二钉扎层磁化。 连接层位于第二被钉扎层和第一自由层之间。 第二非磁性层位于第二被钉扎层和第二自由层之间。 第二自由层是铁磁性的并且具有第二自由层磁化。 磁性元件构造成当写入电流通过磁性元件时，由于自旋转移使第一自由层磁化和第二自由层磁化改变方向。

公开(公告)号：WO2004013861A3

公开(公告)日：2004-04-22

申请号：PCT/US0324627

申请日：2003-08-06

Applicant: GRANDIS INC

Inventor： HUAI YIMING ,  NGUYEN PAUL P

IPC: G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01F41/30 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

CPC classification number: H01F10/3263 ,  B82Y25/00 ,  B82Y40/00 ,  H01F41/302

Abstract: A method and system for providing a magnetic element (100) capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element (100) are disclosed. The magnetic element (100) includes a first ferromagnetic pinned layer (104), a nonmagnetic spacer layer (106), a ferromagnetic free layer (108), an insulating barrier layer (110) and a second ferromagnetic pinned layer (112). The pinned layer (104) has a magnetization pinned in a first direction. The nonmagnetic spacer layer (106) is conductive and is between the first pinned layer (104) and the free layer (108). The barrier layer (110) resides between the free layer (108) and the second pinned layer (112) and is an insulator having a thickness allowing o electron tunneling through the barrier layer (110). The second pinned laye (112) has a magnetization pinned in a second direction. The magnetic element (100) is configured to allow the magnetization of the free layer (108) to change direction due to spin transfer when a write current is passed through the magnetic element (100).

Abstract translation: 公开了一种用于提供能够使用自旋转移效应进行写入而产生高输出信号的磁性元件（100）和使用该磁性元件（100）的磁性存储器的方法和系统。 磁性元件（100）包括第一铁磁性钉扎层（104），非磁性间隔层（106），铁磁性自由层（108），绝缘阻挡层（110）和第二铁磁性钉扎层（112）。 被钉扎层（104）具有沿第一方向固定的磁化。 非磁性间隔层（106）是导电的并且位于第一被钉扎层（104）和自由层（108）之间。 阻挡层（110）位于自由层（108）和第二被钉扎层（112）之间，并且是具有允许电子穿透阻挡层（110）的电子的厚度的绝缘体。 第二钉扎层（112）具有沿第二方向固定的磁化。 磁性元件（100）被配置为当写入电流通过磁性元件（100）时，由于自旋转移使自由层（108）的磁化改变方向。