公开(公告)号：WO2004029973A2

公开(公告)日：2004-04-08

申请号：PCT/US0330176

申请日：2003-09-23

Applicant: GRANDIS INC

Inventor： HUAI YIMING ,  NGUYEN PAUL P

IPC: G11C11/16 ,  H01F10/32 ,  H01L27/22 ,  H01L43/08 ,  G11C

CPC classification number: H01F10/3272 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/302 ,  H01L27/228 ,  H01L43/08

Abstract: A method and system for providing a magnetic element capable of being written using spin-transfer effect while being thermally stable and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a first, second and third pinned layers, first and second nonmagnetic layers, a free layer and a nonmagnetic spacer layers. The first, second and third pinned layers are ferromagnetic and have first, second and third magnetizations pinned in first, second and third directions. The first and second nonmagnetic layers include first and second diffusions barriers, respectively. The first and second nonmagnetic layers are between the first and second pinned layers and the second and third pinned layers, respectively. The first and second pinned layers and the second and third pinned layers are antiferromagnetically coupled. The nonmagnetic spacer layer is conductive and resides between the free layer and the third pinned layer. In addition, performance can be further improved by doping Co containing ferromagnetic layers with Cr and/or Pt.

Abstract translation: 公开了一种用于提供能够使用自旋转移效应而被热稳定地写入的磁性元件的方法和系统，以及使用该磁性元件的磁性存储器。 磁性元件包括第一，第二和第三被钉扎层，第一和第二非磁性层，自由层和非磁性间隔层。 第一，第二和第三钉扎层是铁磁性的，并且具有在第一，第二和第三方向上固定的第一，第二和第三磁化。 第一和第二非磁性层分别包括第一和第二扩散壁垒。 第一和第二非磁性层分别在第一和第二被钉扎层之间以及第二和第三钉扎层之间。 第一和第二钉扎层以及第二和第三钉扎层是反铁磁耦合的。 非磁性间隔层是导电的并且位于自由层和第三被钉扎层之间。 此外，通过用含有Cr和/或Pt的含Co的铁磁层掺杂，能够进一步提高性能。

公开(公告)号：WO2005079528A3

公开(公告)日：2006-10-19

申请号：PCT/US2005005448

申请日：2005-02-18

Applicant: GRANDIS INC ,  NGUYEN PAUL P ,  HUAI YIMING ,  DIAO ZHITAO ,  ALBERT FRANK

Inventor： NGUYEN PAUL P ,  HUAI YIMING ,  DIAO ZHITAO ,  ALBERT FRANK

IPC: H01L43/00 ,  G11B5/673 ,  G11C11/15 ,  G11C11/16 ,  H01F10/16 ,  H01F10/32 ,  H01F41/30 ,  H01H9/00 ,  H01L43/10

CPC classification number: H01L43/10 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/16 ,  H01F10/3263 ,  H01F10/3272 ,  H01F41/303

Abstract: A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).

Abstract translation: 公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。 磁性元件包括固定，非磁性间隔物和自由层。 间隔层位于固定层和自由层之间。 当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。 磁性元件还可以包括阻挡层，第二被钉扎层。 或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。 在一个方面，自由层包括用非磁性材料稀释的铁磁材料和/或亚铁磁掺杂以提供低的饱和磁化强度。

公开(公告)号：WO2004079743A3

公开(公告)日：2005-07-28

申请号：PCT/US2004006003

申请日：2004-02-27

Applicant: GRANDIS INC

Inventor： ALBERT FRANK ,  HUAI YIMING ,  NGUYEN PAUL P

IPC: G11C11/16 ,  G11C11/15

CPC classification number: G11C11/16

Abstract: A method and system for providing a magnetic element (100) and a corresponding memory are disclosed. In one aspect, the method and system include providing a dual spin tunnel/valve structure (102, 104) and at least one spin valve (104). The dual spin tunnel/valve structure includes a nonmagnetic spacer layer (124) between a pinned layer (126) and a free layer (122), another pinned layer and a barrier layer (120) between the free layer (122) and the other pinned layer (126). The free layers (122) of the dual spin tunnel/valve structure (102, 104) and the spin valve (104) are magnetostatically coupled. In one embodiment a separation layer resides between the dual spin tunnel/valve structure (102/104) and the spin valve (104). In another aspect, the method and system include providing two dual spin valves, a spin tunneling junction there between and, in one embodiment, the separation layer. In both aspects, the magnetic element is configured to write to the free layers using spin transfer when a write current is passed through the magnetic element.

Abstract translation: 公开了一种用于提供磁性元件（100）和对应的存储器的方法和系统。 在一个方面，该方法和系统包括提供双自旋隧道/阀结构（102,104）和至少一个自旋阀（104）。 双自旋隧道/阀结构包括在钉扎层（126）和自由层（122）之间的非磁性间隔层（124），在自由层（122）和另一个之间的另一被钉扎层和阻挡层（120） 固定层（126）。 双自旋隧道/阀结构（102,104）和自旋阀（104）的自由层（122）是静磁耦合的。 在一个实施例中，分离层位于双自旋隧道/阀结构（102/104）和自旋阀（104）之间。 在另一方面，该方法和系统包括提供两个双自旋阀，其间的自旋隧道结，在一个实施例中，分离层。 在两个方面，磁性元件配置成当写入电流通过磁性元件时，使用自旋转移来写入自由层。

公开(公告)号：WO2004064073A3

公开(公告)日：2005-01-13

申请号：PCT/US2004000304

申请日：2004-01-07

Applicant: GRANDIS INC

Inventor： NGUYEN PAUL P ,  HUAI YIMING

IPC: G11C11/15 ,  G11C11/00 ,  H01L43/00

CPC classification number: G11C11/15 ,  G11C11/5607

Abstract: A magnetic element (300) for a high-density memory array includes a resettable layer (304) and a storage layer (302). The resettable layer has a magnetization that is set in a selected direction by at least one externally generated magnetic field. The storage layer has at least one magnetic easy axis and a magnetization that changes direction based on the spin-transfer effect when a write current passes through the magnetic element. An alternative embodiment of the magnetic element includes an additional multilayer structure (409) formed from a tunneling barrier layer (410), a pinned magnetic layer (411) and an antiferromagnetic layer (412) that pins the magnetization of the pinned layer in a predetermined direction. Another alternative embodiment of the magnetic element includes an additional multilayer structure (509) that is formed from a tunneling barrier layer (514) and a second resettable layer (513) having a magnetic moment that is different from the magnetic moment of the resettable layer of the basic embodiment.

Abstract translation: 用于高密度存储器阵列的磁性元件（300）包括可重置层（304）和存储层（302）。 可复位层具有通过至少一个外部产生的磁场在选定方向上设定的磁化。 当写入电流通过磁性元件时，存储层具有至少一个易磁化轴和基于自旋转移效应改变方向的磁化。 磁性元件的替代实施例包括由隧道势垒层（410），钉扎磁性层（411）和反铁磁层（412）形成的附加多层结构（409），所述多层结构以预定的方式将钉扎层的磁化 方向。 磁性元件的另一替代实施例包括由隧道势垒层（514）和第二可复位层（513）形成的附加多层结构（509），第二可复位层（513）具有与可复位层的磁矩不同的磁矩 基本的实施例。

公开(公告)号：WO2005029497A3

公开(公告)日：2005-10-06

申请号：PCT/US2004030677

申请日：2004-09-17

Applicant: GRANDIS INC ,  HUAI YIMING ,  NGUYEN PAUL P ,  ALBERT FRANK

Inventor： HUAI YIMING ,  NGUYEN PAUL P ,  ALBERT FRANK

IPC: G11C11/15 ,  G11C11/16 ,  G11C11/00

CPC classification number: G11C11/16

Abstract: A method and system for providing and magnetic element is disclosed. In one aspect, the magnetic element includes at least one pinned layer (110), a free layer (130), and a current confined layer (120) residing between the pinned layer (110) and the free layer (130). The pinned layer (110) is ferromagnetic and has a first magnetization. The current confined layer (120) has at least one channel in an insulating matrix. The channel are conductive and extend through the current confined layer (120). The free layer (130) is ferromagnetic and has a second magnetization. The pinned layer (110), the free layer (130), and the current confined layer (120) are configured to allow the magnetization of the free layer to be switched using spin transfer. The magnetic element (100) also include other layers, including layers for spin valve (spin tunneling junction, dual spin valve, dual spin tunneling junction and dual spin valve/tunnel structure.

Abstract translation: 公开了一种用于提供和磁性元件的方法和系统。 在一个方面，磁性元件包括至少一个固定层（110），自由层（130）和驻留在被钉扎层（110）和自由层（130）之间的电流限制层（120）。 被钉扎层（110）是铁磁性的并且具有第一磁化强度。 电流限制层（120）在绝缘矩阵中具有至少一个通道。 通道是导电的并延伸穿过电流限制层（120）。 自由层（130）是铁磁性的并具有第二磁化强度。 被钉扎层（110），自由层（130）和电流限制层（120）被配置为允许使用自旋转移来切换自由层的磁化。 磁性元件（100）还包括其它层，包括用于自旋阀（自旋隧道结，双自旋阀，双自旋隧道结和双自旋阀/隧道结构）的层。

公开(公告)号：WO2005020242A3

公开(公告)日：2005-06-30

申请号：PCT/US2004027708

申请日：2004-08-24

Applicant: GRANDIS INC ,  NGUYEN PAUL P ,  HUAI YIMING

Inventor： NGUYEN PAUL P ,  HUAI YIMING

IPC: G11C11/16 ,  H01F10/32 ,  H01L43/08 ,  G11C11/15

CPC classification number: G11C11/16 ,  B82Y25/00 ,  G11C11/5607 ,  H01F10/3263 ,  H01L43/08

Abstract: A method and system for providing a magnetic element capable of storing multiple bits is disclosed. The method and system include providing first pinned layer, a first nonmagnetic layer, a first free layer, a connecting layer, a second pinned layer, a second nonmagetic layer and a second free layer. The first pinned layer is ferromagnetic and has a first pinned layer magnetization pinned in a first direction. The first nonmagnetic layer resides between the first pinned layer and the first free layer. The first free layer being ferromagnetic and has a first free layer magnetization. The second pinned layer is ferromagnetic and has a second pinned layer magnetization pinned in a second direction. The connecting layer resides between the second pinned layer and the first free layer. The second nonmagnetic layer resides between the second pinned layer and the second free layer. The second free layer being ferromagnetic and having a second free layer magnetization. The magnetic element is configured to allow the first free layer magnetization and the second free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.

Abstract translation: 公开了一种用于提供能够存储多个比特的磁性元件的方法和系统。 该方法和系统包括提供第一固定层，第一非磁性层，第一自由层，连接层，第二固定层，第二非固定层和第二自由层。 第一钉扎层是铁磁的并具有在第一方向上钉扎的第一钉扎层磁化。 第一非磁性层位于第一固定层和第一自由层之间。 第一自由层是铁磁性的并且具有第一自由层磁化。 第二钉扎层是铁磁性的并且具有钉扎在第二方向上的第二钉扎层磁化。 连接层位于第二固定层和第一自由层之间。 第二非磁性层位于第二钉扎层和第二自由层之间。 第二自由层是铁磁性的并且具有第二自由层磁化。 磁性元件被配置为当写入电流通过磁性元件时，允许第一自由层磁化和第二自由层磁化由于自旋转移而改变方向。

公开(公告)号：WO2004063760A3

公开(公告)日：2005-02-10

申请号：PCT/US2004000453

申请日：2004-01-09

Applicant: GRANDIS INC

Inventor： HUAI YIMING ,  ALBERT FRANK ,  NGUYEN PAUL P

IPC: G01R20060101 ,  G11C11/00 ,  G11C11/16

CPC classification number: G11C11/16

Abstract: A method and system for providing a magnetic element capable of being written using the spin-transfer effect and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a spin tunneling junction, a separation layer and a spin valve. In an alternate embodiment, the spin tunneling junction and/or spin valve may be dual. The separation layer is between a first free layer of the spin tunneling junction and a second free layer of the spin valve. The separation layer is configured so that the two free layers are magnetostatically coupled, preferably with their magnetizations antiparallel. In an alternate embodiment, having a dual spin valve and a dual spin tunneling junction, the separation layer may be omitted, and the appropriate distance provided using an antiferromagnetic layer. Another embodiment includes shaping the element such that the spin valve has a smaller lateral dimension than the spin tunneling junction.

Abstract translation: 公开了一种用于提供能够使用自旋转移效应进行写入的磁性元件和使用该磁性元件的磁性存储器的方法和系统。 磁性元件包括自旋隧道结，分离层和自旋阀。 在替代实施例中，自旋隧道结和/或自旋阀可以是双重的。 分离层位于自旋隧穿结的第一自由层和自旋阀的第二自由层之间。 分离层被配置为使得两个自由层被静磁耦合，优选地它们的磁化反平行。 在替代实施例中，具有双自旋阀和双自旋隧道结，可以省略分离层，并且使用反铁磁层提供适当的距离。 另一个实施例包括使元件成形，使得自旋阀具有比自旋隧道结更小的横向尺寸。

公开(公告)号：WO2005082061A3

公开(公告)日：2005-12-29

申请号：PCT/US2005006161

申请日：2005-02-24

Applicant: GRANDIS INC ,  NGUYEN PAUL P ,  HUAI YIMING

Inventor： NGUYEN PAUL P ,  HUAI YIMING

IPC: G11C11/16 ,  G11C17/02 ,  H01F10/30 ,  H01F10/32 ,  H01F41/30 ,  H01L31/119 ,  H01L43/00 ,  H01L43/08

CPC classification number: H01F41/302 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/30 ,  H01F10/3236 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/08 ,  Y10T428/26 ,  Y10T428/261 ,  Y10T428/265

Abstract: A method and System for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. At least one free layer has a high perpendicular anisotropy. The high perpendicular anisotropy has a perpendicular anisotropy energy that is at least twenty and less than one hundred percent of the out-of­plane demagnetization energy.

Abstract translation: 公开了一种用于提供可用于磁存储器的磁性元件的方法和系统。 磁性元件包括钉扎的非磁性间隔物和自由层。 间隔层位于固定层和自由层之间。 当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。 磁性元件还可以包括阻挡层，第二固定层。 或者，包括第二钉扎和第二间隔层以及静磁耦合到自由层的第二自由层。 至少一个自由层具有高垂直各向异性。 高垂直各向异性具有垂直各向异性能量，其至少是平面外退磁能量的百分之二十但小于百分之百。

公开(公告)号：WO2004013861A3

公开(公告)日：2004-04-22

申请号：PCT/US0324627

申请日：2003-08-06

Applicant: GRANDIS INC

Inventor： HUAI YIMING ,  NGUYEN PAUL P

IPC: G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01F41/30 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

CPC classification number: H01F10/3263 ,  B82Y25/00 ,  B82Y40/00 ,  H01F41/302

Abstract: A method and system for providing a magnetic element (100) capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element (100) are disclosed. The magnetic element (100) includes a first ferromagnetic pinned layer (104), a nonmagnetic spacer layer (106), a ferromagnetic free layer (108), an insulating barrier layer (110) and a second ferromagnetic pinned layer (112). The pinned layer (104) has a magnetization pinned in a first direction. The nonmagnetic spacer layer (106) is conductive and is between the first pinned layer (104) and the free layer (108). The barrier layer (110) resides between the free layer (108) and the second pinned layer (112) and is an insulator having a thickness allowing o electron tunneling through the barrier layer (110). The second pinned laye (112) has a magnetization pinned in a second direction. The magnetic element (100) is configured to allow the magnetization of the free layer (108) to change direction due to spin transfer when a write current is passed through the magnetic element (100).

Abstract translation: 公开了一种用于提供能够使用自旋转移效应进行写入而产生高输出信号的磁性元件（100）和使用该磁性元件（100）的磁性存储器的方法和系统。 磁性元件（100）包括第一铁磁性钉扎层（104），非磁性间隔层（106），铁磁性自由层（108），绝缘阻挡层（110）和第二铁磁性钉扎层（112）。 被钉扎层（104）具有沿第一方向固定的磁化。 非磁性间隔层（106）是导电的并且位于第一被钉扎层（104）和自由层（108）之间。 阻挡层（110）位于自由层（108）和第二被钉扎层（112）之间，并且是具有允许电子穿透阻挡层（110）的电子的厚度的绝缘体。 第二钉扎层（112）具有沿第二方向固定的磁化。 磁性元件（100）被配置为当写入电流通过磁性元件（100）时，由于自旋转移使自由层（108）的磁化改变方向。