公开(公告)号：WO2002078073A1

公开(公告)日：2002-10-03

申请号：PCT/JP2002/002548

申请日：2002-03-18

Applicant: 財団法人地球環境産業技術研究機構 ,  芝田 耕治 ,  辻 直人 ,  村田 等 ,  和仁 悦夫 ,  小佐野 善秀

Inventor： 芝田 耕治 ,  辻 直人 ,  村田 等 ,  和仁 悦夫 ,  小佐野 善秀

IPC: H01L21/31

CPC classification number: C23C16/4405 ,  Y10S134/902 ,  Y10S438/905

Abstract: A method of cleaning in a CVD device capable of efficiently removing by-products such as SiO2 and Si3N4 attached to and deposited on the inner wall of a reaction chamber and the surfaces of an electrode when forming films, being very low in cleaning gas exhaust amount, affecting very little environments such as global warming, and contributing to cost reduction. After films are formed on a substrate by a CVD device, a fluorine-containing compound-containing fluorine-based cleaning gas is turned into plasma by a remote plasma generator , the plasma-based cleaning gas is introduced into a reaction chamber, and by-products deposited on the inside of the reaction chamber are removed.

Abstract translation: 一种在能够有效地除去附着在沉积在反应室的内壁上的SiO 2和Si 3 N 4等副产物和形成膜时的电极表面的CVD装置中的清洗方法，其清洗气体排出量非常低 影响非常小的环境，如全球变暖，并有助于降低成本。 通过CVD装置在基板上形成膜后，通过远程等离子体发生器将含氟化合物的氟系清洗气体变成等离子体，将等离子体清洗气体引入反应室， 去除沉积在反应室内部的产物。