公开(公告)号：WO2017123423A1

公开(公告)日：2017-07-20

申请号：PCT/US2016/069204

申请日：2016-12-29

Applicant: APPLIED MATERIALS, INC.

Inventor： RODRIGO, Chirantha ,  ZHANG, Jingchun ,  JI, Lili ,  WANG, Anchuan ,  INGLE, Nitin K.

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/02 ,  H01L21/3213

CPC classification number: H01J37/32862 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32724 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67069 ,  Y10S438/905

Abstract: The present disclosure provides methods for cleaning chamber components post substrate etching. In one example, a method for cleaning includes activating an etching gas mixture using a plasma to create an activated etching gas mixture, the etching gas mixture comprising hydrogen-containing precursor and a fluorine-containing precursor and delivering the activated etching gas mixture to a processing region of a process chamber, the process chamber having an edge ring positioned therein, the edge ring comprising a catalyst and anticatalytic material, wherein the activated gas removes the anticatalytic material from the edge ring.

Abstract translation: 本公开提供了用于在衬底蚀刻之后清洁腔室组件的方法。 在一个实例中，用于清洁的方法包括使用等离子体激活蚀刻气体混合物以产生活化的蚀刻气体混合物，蚀刻气体混合物包含含氢前体和含氟前体，并将活化的蚀刻气体混合物输送到处理 所述处理室具有定位在其中的边缘环，所述边缘环包含催化剂和抗催化材料，其中所述活化气体从所述边缘环移除所述抗催化材料。

公开(公告)号：WO2012093983A2

公开(公告)日：2012-07-12

申请号：PCT/US2010/045938

申请日：2010-08-18

Applicant: APPLIED MATERIALS, INC. ,  PARK, Soonam ,  JEON, Soo ,  TRAN, Toan Q. ,  YANG, Jang-Gyoo ,  LIANG, Qiwei ,  LUBOMIRSKY, Dmitry

Inventor： PARK, Soonam ,  JEON, Soo ,  TRAN, Toan Q. ,  YANG, Jang-Gyoo ,  LIANG, Qiwei ,  LUBOMIRSKY, Dmitry

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/4404 ,  C23C16/401 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  Y10S438/905

Abstract: Methods of seasoning a remote plasma system are described. The methods include the steps of flowing a silicon-containing precursor into a remote plasma region to deposit a silicon containing film on an interior surface of the remote plasma system. The methods reduce reactions with the seasoned walls during deposition processes, resulting in improved deposition rate, improved deposition uniformity and reduced defectivity during subsequent deposition.

Abstract translation: 描述调制远程等离子体系统的方法。 该方法包括将含硅前体流入远程等离子体区域以在远程等离子体系统的内表面上沉积含硅膜的步骤。 这些方法减少沉积过程中与经过老化的壁面的反应，导致沉积速率提高，沉积均匀性改善并且在随后的沉积期间减少缺陷率。

公开(公告)号：WO2008106634A3

公开(公告)日：2008-11-06

申请号：PCT/US2008055448

申请日：2008-02-29

Applicant: APPLIED MATERIALS INC ,  WHITE JOHN M ,  KURITA SHINICHI ,  MATSUMOTO TAKAYUKI

Inventor： WHITE JOHN M ,  KURITA SHINICHI ,  MATSUMOTO TAKAYUKI

IPC: C23C16/00

CPC classification number: F16K51/02 ,  Y10S438/905 ,  Y10T29/49412

Abstract: The present invention generally comprises a floating slit valve for interfacing with a chamber. A floating slit valve moves or "floats" relative to another object such as a chamber. The slit valve may be coupled between two chambers. When a chamber coupled with the slit valve is heated, the slit valve may also be heated by conduction. As the slit valve is heated, it may thermally expand. When a vacuum is drawn in a chamber, the slit valve may deform due to vacuum deflection. By disposing a low friction material spacer between the chamber and the slit valve, the slit valve may not rub against the chamber during thermal expansion/contraction and/or vacuum deflection and thus, may not generate undesirable particle contaminants. Additionally, slots drilled through the chamber for coupling the slit valve to the chamber may be sized to accommodate thermal expansion/contraction and vacuum deflection of the slit valve.

Abstract translation: 本发明通常包括用于与室连接的浮动狭缝阀。 浮动狭缝阀相对于诸如室的另一物体移动或“浮动”。 狭缝阀可以联接在两个腔室之间。 当与狭缝阀联接的室被加热时，狭缝阀也可以通过传导加热。 当狭缝阀被加热时，它可以热膨胀。 当在室中抽真空时，狭缝阀可能由于真空偏转而变形。 通过在室和狭缝阀之间设置低摩擦材料间隔件，狭缝阀在热膨胀/收缩和/或真空偏转期间可能不会摩擦室，因此不会产生不期望的颗粒污染物。 此外，穿过腔室钻出的狭缝阀将腔室连接到腔室的尺寸可以被设计成适应狭缝阀的热膨胀/收缩和真空偏转。

公开(公告)号：WO2006082724A1

公开(公告)日：2006-08-10

申请号：PCT/JP2006/300957

申请日：2006-01-23

Applicant: 東京エレクトロン株式会社 ,  古井 真悟 ,  小林 岳志 ,  北川 淳一

Inventor： 古井 真悟 ,  小林 岳志 ,  北川 淳一

IPC: H01L21/3065

CPC classification number: H01J37/32862 ,  Y10S438/905

Abstract: 　所定のパターンで多数のスロットが形成された平面アンテナ（Radial Line Slot Antenna）を利用してマイクロ波発生源から導かれたマイクロ波をチャンバー内に放射し、プラズマを形成するＲＬＳＡマイクロ波プラズマ処理装置において、Ｎａ等で汚染されたチャンバーを、Ｈ ２ ガスとＯ ２ ガスを含むクリーニングガスのプラズマを用いてクリーニングする。  

Abstract translation: 一种RLSA（径向线槽天线）微波等离子体处理装置，其通过利用具有根据规定图案形成的大量槽的RLSA向室内照射从微波产生源引入的微波， 形成等离子体，其中已经被Na等污染的室通过使用含有H 2气体和O 2 2气体的清洁气体的等离子体来清洁， 加油站。

公开(公告)号：WO2006078408A2

公开(公告)日：2006-07-27

申请号：PCT/US2005/046342

申请日：2005-12-19

Applicant: TOKYO ELECTRON LIMITED ,  O'MEARA, David, L. ,  MAKU, Shingo

Inventor： O'MEARA, David, L. ,  MAKU, Shingo

IPC: H01L21/306 ,  C03C25/68

CPC classification number: C03C17/001 ,  C03C17/22 ,  C03C17/23 ,  C03C2217/228 ,  C03C2217/258 ,  C03C2218/31 ,  C03C2218/33 ,  C23C16/4405 ,  Y10S438/905

Abstract: A method and control system for treating a hafnium-based dielectric processing system in which a system component of the processing system is exposed to a chlorine-­containing gas. A residual hafnium by-product remaining in the processing system after a hafnium removal process is reacted with a chlorine-containing etchant derived from the chlorine-containing gas. A chlorinated hafnium product is volatilized for exhaustion from the processing system. The control system can utilize a computer readable medium to introduce a chlorine-containing gas to the processing system, to adjust at least one of a temperature and a pressure in the processing system to produce from the chlorine-­containing gas a chlorine-containing etchant for dissolution of a residual hafnium by-­product remaining in the processing system after a hafnium silicate, hafnium oxide, or hafnium oxynitride removal process, and to exhaust a chlorinated hafnium product from the processing system.

Abstract translation: 一种用于处理其中处理系统的系统组件暴露于含氯气体的铪基介质处理系统的方法和控制系统。 在除去铪之后残留在处理系统中的残余铪副产物与来自含氯气体的含氯蚀刻剂反应。 氯化铪产品从处理系统中挥发以用尽。 控制系统可利用计算机可读介质向处理系统引入含氯气体，以调节处理系统中的温度和压力中的至少一个，以从含氯气体中产生含氯气体的含氯蚀刻剂 在硅酸铪，氧化铪或氮氧化铪去除工艺之后残留在处理系统中的残余铪副产物的溶解，并从处理系统中排出氯化铪产物。

公开(公告)号：WO2003038870A1

公开(公告)日：2003-05-08

申请号：PCT/US2002/030854

申请日：2002-09-30

Applicant: APPLIED MATERIALS, INC.

Inventor： LUSCHER, Paul, E. ,  CARDUCCI, James, D. ,  SALIMIAN, Siamak ,  WELCH, Michael, D.

IPC: H01L21/00

CPC classification number: H01L21/67051 ,  B08B3/04 ,  H01L21/67028 ,  Y10S134/902 ,  Y10S438/905

Abstract: The present invention provides a method and an apparatus for cleaning substrates. The cleaning chamber (102) defines a processing cavity (114) adapted to accommodate a substrate (616) therein. In one embodiment, the cleaning chamber (102) includes a chamber body having a processing cavity (114) defined therein. A substrate (616) is disposed in the processing cavity (114) without contacting other chamber components by a Bernoulli effect and/or by a fluid cushion above and/or below the substrate. Fluid is flowed into the processing cavity (114) at an angle relative to a radial line of the substrate (616) to induce and/or control rotation of the substrate during a cleaning and drying process.

Abstract translation: 本发明提供一种清洗基板的方法和装置。 清洁室（102）限定适于容纳其中的基底（616）的处理空腔（114）。 在一个实施例中，清洁室（102）包括具有限定在其中的处理空腔（114）的室主体。 衬底（616）设置在处理空腔（114）中，而不通过伯努利效应和/或通过衬底上方和/或下方的流体衬垫接触其它腔室部件。 流体相对于基底（616）的径向线以一定角度流入处理空腔（114），以在清洁和干燥过程中引起和/或控制基底的旋转。

公开(公告)号：WO2002078073A1

公开(公告)日：2002-10-03

申请号：PCT/JP2002/002548

申请日：2002-03-18

Applicant: 財団法人地球環境産業技術研究機構 ,  芝田 耕治 ,  辻 直人 ,  村田 等 ,  和仁 悦夫 ,  小佐野 善秀

Inventor： 芝田 耕治 ,  辻 直人 ,  村田 等 ,  和仁 悦夫 ,  小佐野 善秀

IPC: H01L21/31

CPC classification number: C23C16/4405 ,  Y10S134/902 ,  Y10S438/905

Abstract: A method of cleaning in a CVD device capable of efficiently removing by-products such as SiO2 and Si3N4 attached to and deposited on the inner wall of a reaction chamber and the surfaces of an electrode when forming films, being very low in cleaning gas exhaust amount, affecting very little environments such as global warming, and contributing to cost reduction. After films are formed on a substrate by a CVD device, a fluorine-containing compound-containing fluorine-based cleaning gas is turned into plasma by a remote plasma generator , the plasma-based cleaning gas is introduced into a reaction chamber, and by-products deposited on the inside of the reaction chamber are removed.

Abstract translation: 一种在能够有效地除去附着在沉积在反应室的内壁上的SiO 2和Si 3 N 4等副产物和形成膜时的电极表面的CVD装置中的清洗方法，其清洗气体排出量非常低 影响非常小的环境，如全球变暖，并有助于降低成本。 通过CVD装置在基板上形成膜后，通过远程等离子体发生器将含氟化合物的氟系清洗气体变成等离子体，将等离子体清洗气体引入反应室， 去除沉积在反应室内部的产物。

公开(公告)号：WO01003858A1

公开(公告)日：2001-01-18

申请号：PCT/US2000/040359

申请日：2000-07-12

IPC: B08B7/00 ,  C23C16/44 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/31 ,  B08B7/04 ,  B08B9/00 ,  B08B9/027

CPC classification number: B08B7/0035 ,  C23C16/4405 ,  Y10S438/905

Abstract: An in situ, two step or combination, method and system for cleaning of semiconductor manufacturing equipment (10) is provided. The present invention utilizes two separate fluorine based chemistries in each step which selectively target the removal of different types of deposits that build up on the equipment surfaces. In particular, powdery and dense film-like solid deposits, as well as a combination of both, build up on the chamber (12) surfaces and associated equipment components. These two types of deposits are removed selectively by the present invention. Such selective targeting of combined cleaning steps, yields an improved cleaning technique. In another embodiment, the method and system of the present invention provides for cleaning of the chamber (12) and associated equipment using separate steps with different chemicals, and then performing these steps in a variety of desired sequences.

Abstract translation: 提供了原位，两步或组合，用于半导体制造设备（10）的清洁方法和系统。 本发明在每个步骤中使用两个单独的基于氟的化学物质，其选择性地靶向在设备表面上积累的不同类型的沉积物的去除。 特别地，粉末和致密的薄膜状固体沉积物以及两者的组合积聚在室（12）表面和相关设备组件上。 这两种沉积物通过本发明有选择地被去除。 组合清洁步骤的这种选择性靶向产生改进的清洁技术。 在另一个实施例中，本发明的方法和系统提供了使用具有不同化学物质的分离步骤清洁腔室（12）和相关联的设备，然后以多种期望的顺序执行这些步骤。

公开(公告)号：WO00004213A1

公开(公告)日：2000-01-27

申请号：PCT/US1999/014922

申请日：1999-06-30

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/3213 ,  C30B33/12

CPC classification number: H01L21/02071 ,  H01L21/32137 ,  Y10S438/905

Abstract: A method of etching a layer (28) preferably polysilicon on a substrate (14) comprises the steps of placing the substrate on a support (75) in a process chamber (50). The substrate (45) is exposed to an energized process gas comprising a bromine-containing gas preferably HBr, Br2 or CH3Br, a chlorine-containing gas preferably C12 or HC1, an inorganic fluorinated gas preferably NF3, CF4 or SF6, and an oxygen gas optionally diluted with He. The volumetric flow ratio of the gas constituents is selected so that the energized process gas etches regions (28a, b) having different concentrations of dopant in the polysilicon layer (28) at substantially the same etching rate. Optionally, the gas composition is also tailored to simultaneously clean off etch residue from the internal surfaces of a process chamber (50) during etching of the substrate (45).

Abstract translation: 在衬底（14）上蚀刻优选多晶硅的层（28）的方法包括以下步骤：将衬底放置在处理室（50）中的支撑体（75）上。 衬底（45）暴露于包含含溴气体，优选HBr，Br2或CH3Br，含氯气体，优选C12或HC1，无机氟化气体，优选NF 3，CF 4或SF 6和氧气 任选用他稀释。 选择气体成分的体积流量比，使得在多晶硅层（28）中具有不同浓度掺杂剂的赋能过程气体以基本相同的蚀刻速率蚀刻区域（28a，b）。 任选地，气体组合物还被定制成在蚀刻基板（45）期间同时从处理室（50）的内表面清除蚀刻残留物。

公开(公告)号：WO00002674A1

公开(公告)日：2000-01-20

申请号：PCT/US1999/015799

申请日：1999-07-13

IPC: C23C16/44 ,  C30B25/08 ,  C30B31/10 ,  B08B5/00 ,  B08B9/00 ,  B44C1/22

CPC classification number: C30B31/10 ,  C23C16/4405 ,  C30B25/08 ,  Y10S438/905

Abstract: A method for in-situ cleaning of a hot wall RTP system. Internal components are heated to high temperatures above 500 DEG C. A halocarbon gas, inert gas and oxidizing gas are flowed through the reactor for a period which may exceed 20 minutes and then purged to remove contaminants.

Abstract translation: 一种用于原位清洗热壁RTP系统的方法。 将内部组分加热至高于500℃的高温。卤代烃气体，惰性气体和氧化气体通过反应器流过可能超过20分钟的时间段，然后吹扫除去污染物。