公开(公告)号：WO2013007705A1

公开(公告)日：2013-01-17

申请号：PCT/EP2012/063442

申请日：2012-07-09

Applicant: STMICROELECTRONICS S.R.L. ,  ABAGNALE, Giovanni

Inventor： ABAGNALE, Giovanni

IPC: H01L29/417 ,  H01L21/74

CPC classification number: H01L21/743 ,  H01L29/2003 ,  H01L29/7787 ,  H01L29/872

Abstract: An electronic device includes a silicon substrate (2) having a first side and a second side. A structural layer of gallium nitride (6) is formed over the first side of the silicon substrate and includes an active area of the electronic device. A transition layer (8) is provided between the substrate and the structural layer. The transition layer electrically and/or thermally insulated the substrate and the structural layer from one another. A via hole (20) made of a conductive material extends through the structural layer and the transition layer. The via hole is electrically and/or thermally connected to the active area of the electronic device and to the substrate.

Abstract translation: 电子设备包括具有第一侧和第二侧的硅衬底（2）。 在硅衬底的第一侧上形成氮化镓（6）的结构层，并且包括电子器件的有源区。 在基板和结构层之间提供过渡层（8）。 过渡层将衬底和结构层彼此电和/或热绝缘。 由导电材料制成的通孔（20）延伸穿过结构层和过渡层。 通孔与电子器件的有源区域和衬底电气和/或热连接。