公开(公告)号：WO2023079030A2

公开(公告)日：2023-05-11

申请号：PCT/EP2022/080734

申请日：2022-11-03

Applicant: ATLANT 3D NANOSYSTEMS

Inventor： KUNDRATA, Ivan ,  WIESNER, Philipp ,  PLAKHOTNYUK, Maksym ,  BACHMANN, Julien ,  CARNOY, Matthias ,  FUNDING LA COUR, Mette

IPC: C23C16/04 ,  C23C16/455 ,  B29C64/159 ,  B33Y10/00 ,  G02B5/18 ,  G02B5/32

Abstract: The disclosure relates an atomic layer deposition and/or etching method comprising drawing, using a first precursor fluid, on a substrate a first line extending longitudinally and having, in lateral direction, a first linewidth, and drawing, using a second precursor fluid, on the substrate a second line extending longitudinally and having, in lateral direction, a second linewidth. The first and second lines partly overlap one another laterally by less than the first linewidth and the second linewidth, and/or the first and second lines are laterally spaced apart from one another by less than the first linewidth and the second linewidth, such that a first protrusion is formed of which a largest width in lateral direction is smaller than the first linewidth and the second linewidth, and/or a first recess is formed of which a largest width, in lateral direction, is smaller than the first linewidth and the second linewidth.