公开(公告)号：WO2010126639A1

公开(公告)日：2010-11-04

申请号：PCT/US2010023798

申请日：2010-02-10

Applicant: CALISOLAR INC ,  OUNADJELA KAMEL ,  WALERYSIAK MARCIN ,  JOUINI ANIS ,  HEUER MATTHIAS ,  SIDELKHEIR OMAR ,  BLOSSSE ALAIN ,  KIRSCHT FRITZ

Inventor： OUNADJELA KAMEL ,  WALERYSIAK MARCIN ,  JOUINI ANIS ,  HEUER MATTHIAS

IPC: C01B33/02

CPC classification number: C01B33/037 ,  C30B11/00 ,  C30B11/002 ,  C30B11/003 ,  C30B29/06 ,  C30B35/007

Abstract: A process control method for UMG-Si purification by performing a directional solidification of molten UMG-Si to form a silicon ingot is described. The ingot is divided into bricks and the resistivity profile of each silicon brick is mapped. A crop line for removing the impurities concentrated and captured in the ingot during the directional solidification is calculated based on the resistivity map. The concentrated impurities are then removed by cropping each brick along that brick's calculated crop line.

Abstract translation: 描述了通过执行熔融UMG-Si的定向凝固以形成硅锭的UMG-Si纯化的工艺控制方法。 铸锭分为砖块，每块硅砖的电阻率分布图。 基于电阻率图计算在定向凝固期间去除在锭中浓缩和捕获的杂质的作物线。 然后通过沿着砖的计算作物线裁剪每个砖，去除浓缩的杂质。