公开(公告)号：WO2008042843A2

公开(公告)日：2008-04-10

申请号：PCT/US2007080069

申请日：2007-10-01

Applicant: FAIRCHILD SEMICONDUCTOR ,  CALAFUT DANIEL S ,  YILMAZ HAMZA ,  SAPP STEVEN

Inventor： CALAFUT DANIEL S ,  YILMAZ HAMZA ,  SAPP STEVEN

IPC: H01L27/06

CPC classification number: H01L29/866 ,  H01L27/0255 ,  H01L29/7808 ,  H01L2924/0002 ,  H03K17/08122 ,  H03K17/0822 ,  H01L2924/00

Abstract: An electrostatic discharge (ESD) protection network for power MOSFETs includes parallel branches, containing polysilicon zener diodes and resistors, used for protecting the gate from rupture caused by high voltages caused by ESD. The branches may have the same or independent paths for voltage to travel across from the gate region into the semiconductor substrate. Specifically, the secondary branch has a higher breakdown voltage than the primary branch so that the voltage is shared across the two branches of the protection network. The ESD protection network of the device provides a more effective design without increasing the space used on the die. The ESD protection network can also be used with other active and passive devices such as thyristors, insulated-gate bipolar transistors, and bipolar junction transistors.

Abstract translation: 用于功率MOSFET的静电放电（ESD）保护网络包括并联支路，其包含多晶硅齐纳二极管和电阻器，用于保护栅极免受由ESD引起的高压引起的破坏。 分支可以具有相同或独立的路径，用于电压跨越栅极区域进入半导体衬底。 具体地，次级分支具有比主分支更高的击穿电压，使得电压在保护网络的两个分支上共享。 器件的ESD保护网络提供了更有效的设计，而不增加芯片上使用的空间。 ESD保护网络还可以与其他有源和无源器件如晶闸管，绝缘栅双极晶体管和双极结型晶体管一起使用。

公开(公告)号：WO2008042843A3

公开(公告)日：2008-04-10

申请号：PCT/US2007/080069

申请日：2007-10-01

Applicant: FAIRCHILD SEMICONDUCTOR CORPORATION ,  CALAFUT, Daniel, S. ,  YILMAZ, Hamza ,  SAPP, Steven

Inventor： CALAFUT, Daniel, S. ,  YILMAZ, Hamza ,  SAPP, Steven

IPC: H01L29/68

Abstract: An electrostatic discharge (ESD) protection network for power MOSFETs includes parallel branches, containing polysilicon zener diodes and resistors, used for protecting the gate from rupture caused by high voltages caused by ESD. The branches may have the same or independent paths for voltage to travel across from the gate region into the semiconductor substrate. Specifically, the secondary branch has a higher breakdown voltage than the primary branch so that the voltage is shared across the two branches of the protection network. The ESD protection network of the device provides a more effective design without increasing the space used on the die. The ESD protection network can also be used with other active and passive devices such as thyristors, insulated-gate bipolar transistors, and bipolar junction transistors.